Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TRPA1 | O75762 | 1/20 | 0.39 |
| ▸ | HTR2C | P28335 | 1/20 | 0.39 |
| ▸ | CHRNB4 | P30926 | 2/20 | 0.38 |
| ▸ | CHRNA3 | P32297 | 2/20 | 0.38 |
| ▸ | CHRNA7 | P36544 | 2/20 | 0.38 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.38 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.38 |
| ▸ | EGFR | P00533 | 1/20 | 0.37 |
| ▸ | PDGFRB | P09619 | 1/20 | 0.37 |
| ▸ | PDGFRA | P16234 | 1/20 | 0.37 |
| ▸ | NQO2 | P16083 | 3/20 | 0.37 |
| ▸ | ESR1 | P03372 | 4/20 | 0.36 |
| ▸ | AHR | P35869 | 3/20 | 0.36 |
| ▸ | CA12 | O43570 | 2/20 | 0.35 |
| ▸ | CA1 | P00915 | 2/20 | 0.35 |
| ▸ | CA9 | Q16790 | 2/20 | 0.35 |
| ▸ | KDR | P35968 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | ABL1 | P00519 | 1/20 | 0.34 |
| ▸ | TTR | P02766 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL409780 | 0.83 | CHRNB4 (0.51) | TRPA1CHRNB4CHRNA3CHRNA7CHRNB2 | |
| SCHEMBL283041 | 0.83 | CHRNA7 (0.43) | CHRNB4CHRNA3CHRNA7CHRNB2CHRNA4 | |
| SCHEMBL657580 | 0.83 | ALDH1A1 (0.46) | MAPT | |
| SCHEMBL3625535 | 0.82 | RELA (0.50) | CHRNB4CHRNA3CHRNA7CHRNB2CHRNA4 | |
| SCHEMBL12567390 | 0.82 | CHRNA7 (0.47) | TRPA1CHRNB4CHRNA3CHRNA7CHRNB2 | |
| SCHEMBL409207 | 0.81 | TDP1 (0.46) | CHRNA7MAPT | |
| SCHEMBL29566387 | 0.80 | CYP1A2 (0.54) | TRPA1HTR2CNQO2ESR1AHR | |
| SCHEMBL29566047 | 0.80 | CYP1A2 (0.54) | TRPA1HTR2CNQO2ESR1AHR | |
| SCHEMBL190030 | 0.80 | CYP1A2 (0.54) | TRPA1HTR2CNQO2ESR1AHR | |
| SCHEMBL3629029 | 0.79 | RELA (0.47) | CHRNB4CHRNA3CHRNA7CHRNB2CHRNA4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-9541834-B2 | Ionic thermal acid generators for low temperature applications | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-01-10 | — | — | US | disclosed |
| CN-102617790-B | Polymer, the method for photo-corrosion-resisting agent composition and formation photoengraving pattern | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2016-05-25 | — | — | CN | disclosed |
| US-9298093-B2 | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2016-03-29 | — | — | US | disclosed |
| CN-102445848-B | The method of photoetching compositions and formation photoengraving pattern | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2015-08-05 | — | — | CN | disclosed |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-07-30 | — | — | US | disclosed |
| US-8975001-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2015-03-10 | — | — | US | disclosed |
| US-8790867-B2 | Methods of forming photolithographic patterns by negative tone development | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-07-29 | — | — | US | disclosed |
| US-8771917-B2 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2014-07-08 | — | — | US | disclosed |
| US-20140120470-A1 | PHOTORESISTS COMPRISING IONIC COMPOUND | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-05-01 | — | — | US | disclosed |
| US-20120171617-A1 | POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-07-05 | — | — | US | disclosed |
| EP-2472325-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472326-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472324-A1 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2461213-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-06-06 | — | — | EP | disclosed |
| CN-102445848-A | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-05-09 | — | — | CN | disclosed |
| US-20120077120-A1 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-03-29 | — | — | US | disclosed |
| US-20120064456-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-03-15 | — | — | US | disclosed |
| EP-2428843-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
| EP-2428842-A1 | Photoresists comprising multi-amide component | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ASPH, ALAD, SUN2 | TRPA1 1122/4885HTR2C 1661/4885CHRNB4 4598/4885 |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | TRIM4, TRMT1, TRIM59 | TRPA1 726/4885HTR2C 3813/4885CHRNB4 1725/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.