Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CHRNA7 | P36544 | 3/20 | 0.43 |
| ▸ | CHRNB4 | P30926 | 2/20 | 0.43 |
| ▸ | CHRNA3 | P32297 | 2/20 | 0.43 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.43 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.43 |
| ▸ | RELA | Q04206 | 1/20 | 0.41 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.41 |
| ▸ | ESR1 | P03372 | 2/20 | 0.41 |
| ▸ | AHR | P35869 | 2/20 | 0.41 |
| ▸ | NCF1 | P14598 | 2/20 | 0.38 |
| ▸ | TUBB4A | P04350 | 1/20 | 0.38 |
| ▸ | TUBB | P07437 | 1/20 | 0.38 |
| ▸ | TUBA3C | P0DPH7 | 1/20 | 0.38 |
| ▸ | TUBA1B | P68363 | 1/20 | 0.38 |
| ▸ | TUBA4A | P68366 | 1/20 | 0.38 |
| ▸ | TUBB4B | P68371 | 1/20 | 0.38 |
| ▸ | TUBB3 | Q13509 | 1/20 | 0.38 |
| ▸ | TUBB2A | Q13885 | 1/20 | 0.38 |
| ▸ | TUBB8 | Q3ZCM7 | 1/20 | 0.38 |
| ▸ | TUBA3E | Q6PEY2 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3625535 | 0.86 | RELA (0.50) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL1796680 | 0.86 | CHRNA7 (0.54) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL3902755 | 0.86 | NCF1 (0.54) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL283100 | 0.83 | TRPA1 (0.39) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL3629029 | 0.83 | RELA (0.47) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL3624946 | 0.83 | RELA (0.47) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL3901025 | 0.83 | NCF1 (0.51) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL7639908 | 0.82 | KDM4E (0.44) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL6154744 | 0.78 | ESR1 (0.39) | CHRNA7CHRNB4CHRNA3CHRNB2CHRNA4 | |
| SCHEMBL27938239 | 0.78 | MAPK1 (0.58) | CHRNA7CHRNB4CHRNA3MAPTNPC1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-9541834-B2 | Ionic thermal acid generators for low temperature applications | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-01-10 | — | — | US | disclosed |
| US-9298093-B2 | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2016-03-29 | — | — | US | disclosed |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-07-30 | — | — | US | disclosed |
| US-8975001-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2015-03-10 | — | — | US | disclosed |
| US-8790867-B2 | Methods of forming photolithographic patterns by negative tone development | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-07-29 | — | — | US | disclosed |
| US-8771917-B2 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2014-07-08 | — | — | US | disclosed |
| US-20140120469-A1 | THERMAL ACID GENERATORS FOR USE IN PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-05-01 | — | — | US | disclosed |
| US-20140120470-A1 | PHOTORESISTS COMPRISING IONIC COMPOUND | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-05-01 | — | — | US | disclosed |
| US-20130344439-A1 | PHOTORESISTS COMPRISING AMIDE COMPONENT | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2013-12-26 | — | — | US | disclosed |
| EP-2492749-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-08-29 | — | — | EP | disclosed |
| US-20120171617-A1 | POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-07-05 | — | — | US | disclosed |
| EP-2472325-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472326-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472324-A1 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2461213-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-06-06 | — | — | EP | disclosed |
| US-20120077120-A1 | PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-03-29 | — | — | US | disclosed |
| US-20120064456-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-03-15 | — | — | US | disclosed |
| EP-2428843-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
| EP-2428842-A1 | Photoresists comprising multi-amide component | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10719014-B2 | Photoresists comprising amide component | ASPH, ALAD, SUN2 | CHRNA7 4600/4885CHRNB4 4598/4885CHRNA3 4619/4885 |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | TRIM4, TRMT1, TRIM59 | CHRNA7 657/4885CHRNB4 1725/4885CHRNA3 508/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.