SCHEMBL29484423

SCHEMBL29484423

Oc1ccccc1C(c1cccc(C2CCCCC2)c1O)c1cccc(C2CCCCC2)c1O

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ PTPN5 P54829 4/20 0.39
▸ PTPN2 P17706 1/20 0.39
▸ MEN1 O00255 2/20 0.38
▸ KMT2A Q03164 2/20 0.38
▸ FEN1 P39748 2/20 0.37
▸ HDAC4 P56524 1/20 0.37
▸ HDAC2 Q92769 1/20 0.37
▸ HDAC8 Q9BY41 1/20 0.37
▸ PTGDR2 Q9Y5Y4 1/20 0.36
▸ GABRA1 P14867 1/20 0.35
▸ GABRB2 P47870 1/20 0.35
▸ NUDT1 P36639 1/20 0.34
▸ BACE1 P56817 1/20 0.34
▸ HSP90AA1 P07900 1/20 0.34
▸ TAS1R3 Q7RTX0 1/20 0.34
▸ TAS1R1 Q7RTX1 1/20 0.34
▸ TAS1R2 Q8TE23 1/20 0.34
▸ ALOX5AP P20292 1/20 0.33
▸ PTGS2 P35354 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2514437 1.00 PTPN5 (0.39) PTPN5PTPN2MEN1KMT2AFEN1
SCHEMBL9135944 0.92 FEN1 (0.41) PTPN5PTPN2MEN1KMT2AFEN1
SCHEMBL2530090 0.81 HDAC4 (0.39) MEN1KMT2AHDAC4HDAC2HDAC8
SCHEMBL15253060 0.80 FEN1 (0.40) PTPN5PTPN2MEN1KMT2AFEN1
SCHEMBL2513124 0.80 FEN1 (0.36) PTPN5PTPN2KMT2AFEN1PTGDR2
SCHEMBL29484429 0.80 FEN1 (0.36) PTPN5PTPN2KMT2AFEN1PTGDR2
SCHEMBL1053897 0.79 HDAC4 (0.46) PTPN5PTPN2MEN1KMT2AFEN1
SCHEMBL3273157 0.79 HDAC4 (0.36) PTPN5PTPN2MEN1KMT2AHDAC4
SCHEMBL9135740 0.79 GABRA1 (0.34) PTPN5PTPN2MEN1KMT2AHDAC4
SCHEMBL9138960 0.79 GABRA1 (0.34) PTPN5PTPN2MEN1KMT2AHDAC4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119575759-A Positive photosensitive resin composition, photosensitive film, resist underlayer film, resist permanent film, and method for producing film DIC株式会社 2025-03-07 — — CN disclosed
CN-118672058-A Photosensitive resin composition, resist film, resist underlayer film, and resist permanent film DIC株式会社 2024-09-20 — — CN disclosed
CN-116209690-B Phenolic hydroxyl group-containing resin, resin composition for alkali-developable resist, resist-curable resin composition, and method for producing phenolic hydroxyl group-containing resin DIC株式会社 2024-09-06 — — CN disclosed
US-20240270891-A1 PHENOLIC HYDROXY GROUP-CONTAINING RESIN, RESIN COMPOSITION FOR ALKALINE DEVELOPABLE RESIST, RESIST CURABLE RESIN COMPOSITION, AND METHOD FOR PRODUCING PHENOLIC HYDROXY GROUP-CONTAINING RESIN DIC CORPORATION (JP) 2024-08-15 — — US disclosed
CN-118325004-A Phenolic hydroxyl group-containing resin, photosensitive resin composition, curable composition, and resist film DIC株式会社 2024-07-12 — — CN disclosed
CN-114902135-B Positive photosensitive resin composition, cured film, and resist film DIC株式会社 2024-07-02 — — CN disclosed
CN-113348188-B Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition, and cured product DIC株式会社 2024-05-10 — — CN disclosed
CN-117321109-A Phenolic hydroxyl group-containing resin DIC株式会社 2023-12-29 — — CN disclosed
CN-113227181-B Resist composition DIC株式会社 2023-07-18 — — CN disclosed
CN-116430671-A Photoresist composition and photoetching process 上海飞凯材料科技股份有限公司 2023-07-14 — — CN disclosed
CN-110959138-B Resist material DIC株式会社 2023-06-30 — — CN disclosed
CN-116209690-A Phenolic hydroxyl group-containing resin, resin composition for alkali-developable resist, resist-curable resin composition, and method for producing phenolic hydroxyl group-containing resin DIC株式会社 2023-06-02 — — CN disclosed
CN-116023607-A Phenolic hydroxyl group-containing resin DIC株式会社 2023-04-28 — — CN disclosed
CN-115873214-A Epoxy resin, photosensitive resin composition, resist film, curable composition, and cured film DIC株式会社 2023-03-31 — — CN disclosed
CN-107703717-B Positive photosensitive resin composition, method for producing metal wiring, and laminate 东京应化工业株式会社 2023-01-24 — — CN disclosed
US-11487204-B2 Resist material DIC CORPORATION (JP) 2022-11-01 — — US disclosed
CN-114902135-A Positive photosensitive resin composition, cured film and resist film DIC株式会社 2022-08-12 — — CN disclosed
CN-114326300-A Positive photoresist composition, preparation method and photoresist pattern forming method 上海飞凯材料科技股份有限公司 2022-04-12 — — CN disclosed
WO-2022059448-A1 METHOD FOR PRODUCING RESIST PATTERN, RESIST PATTERN AND POSITIVE PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCTION OF TRANSPARENT MULTILAYER MEMBER DIC株式会社 2022-03-24 — — WO disclosed
CN-107703685-B Laminate and method for producing laminate 东京应化工业株式会社 2022-03-18 — — CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11487204-B2 Resist material FLNA, AFF1, RXRA PTPN5 1869/4885PTPN2 2246/4885MEN1 4433/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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