SCHEMBL244367

SCHEMBL244367

O=C1CCCCC1SCC1CCCCC1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.41
ALDH1A1 P00352 3/20 0.38
MAPT P10636 1/20 0.38
CA1 P00915 3/20 0.38
CA2 P00918 3/20 0.38
CA4 P22748 3/20 0.38
DAO P14920 1/20 0.36
NPC1 O15118 2/20 0.34
RAB9A P51151 2/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
CA6 P23280 2/20 0.33
EPHX1 P07099 1/20 0.32
CYP3A4 P08684 1/20 0.31
GAA P10253 1/20 0.31
CYP2C19 P33261 1/20 0.31
HSD11B1 P28845 1/20 0.31
KDM6B O15054 1/20 0.31
KDM4A O75164 1/20 0.31
KDM4D Q6B0I6 1/20 0.31
KDM3B Q7LBC6 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Sulfuric Acid SCHEMBL15345265 0.86 KMT2A (0.32) KMT2AALDH1A1MAPTEPHX1KDM6B
Trifluoromethanesulfonic Acid SCHEMBL7082064 0.85 KMT2A (0.31) KMT2AALDH1A1MAPT
SCHEMBL28377989 0.81 KMT2A (0.38) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL29520443 0.79 ALDH1A1 (0.40) KMT2AALDH1A1MAPTNPC1RAB9A
SCHEMBL14442071 0.76 CA1 (0.45) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL8879148 0.73 CA1 (0.42) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL758778 0.72 KMT2A (0.36) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL6995240 0.71 KMT2A (0.52) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL14508480 0.70 CA1 (0.39) KMT2AALDH1A1MAPTCA1CA2
SCHEMBL6820926 0.69 KMT2A (0.45) KMT2AALDH1A1MAPTCA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 589 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
US-7122294-B2 Photoacid generators with perfluorinated multifunctional anions 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-10-17 US claimed
US-7078444-B2 Ionic photoacid generators with segmented hydrocarbonfluorocarbon sulfonate anions 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-07-18 US claimed
US-20050158655-A1 Ionic photoacid generators with segmented hydrocarbonfluorocarbon sulfonate anions 3M INNOVATIVE PROPERTIES COMPANY 2005-07-21 US claimed
US-6841333-B2 Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions 3M INNOVATIVE PROPERTIES COMPANY (US) 2005-01-11 US claimed
US-20040234888-A1 Photoacid generators with perfluorinated multifunctional anions 3M INNOVATIVE PROPERTIES COMPANY 2004-11-25 US claimed
US-20040087690-A1 Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions 3M INNOVATIVE PROPERTIES COMPANY 2004-05-06 US claimed
US-20030207049-A1 Liquid crystal display unit and method for manufacturing the same NEC CORPORATION 2003-11-06 US claimed
US-6440634-B1 MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-08-27 US claimed
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-0824223-A1 Photosensitive resin composition for far-ultraviolet exposure FUJI PHOTO FILM CO., LTD. (JP) 1998-02-18 EP disclosed
EP-0789278-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-08-13 EP disclosed
US-5585507-A FINENESS PATTERNS NEC CORPORATION (JP) 1996-12-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 KMT2A 893/4885ALDH1A1 2715/4885MAPT 1850/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 KMT2A 714/4885ALDH1A1 1225/4885MAPT 1741/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.