SCHEMBL2958322

SCHEMBL2958322

Cc1ccc(C)c(S(=O)(=O)ON2C(=O)CCC2=O)c1

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.65
MAPT P10636 4/20 0.65
KDM4E B2RXH2 4/20 0.65
F2 P00734 3/20 0.65
KMT2A Q03164 3/20 0.65
HTT P42858 2/20 0.65
XBP1 P17861 1/20 0.65
PARL Q9H300 2/20 0.50
SMN1; SMN2 Q16637 2/20 0.46
LMNA P02545 2/20 0.46
MEN1 O00255 1/20 0.46
HPGD P15428 1/20 0.46
VDR P11473 1/20 0.42
USP2 O75604 1/20 0.41
GAA P10253 1/20 0.41
L3MBTL1 Q9Y468 2/20 0.41
RAB9A P51151 1/20 0.41
HSD17B10 Q99714 2/20 0.40
TSHR P16473 1/20 0.39
POLB P06746 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4837145 0.81 ALDH1A1 (0.65) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL2962362 0.81 PARL (0.62) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL4827230 0.81 ALDH1A1 (0.60) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL64214 0.78 PARL (0.68) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL4834985 0.77 ALDH1A1 (0.59) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL65774 0.76 PARL (0.50) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL4829809 0.75 ALDH1A1 (0.57) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL2323791 0.74 ALDH1A1 (0.54) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL3830348 0.74 ALDH1A1 (0.74) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL22251878 0.72 VDR (0.61) ALDH1A1MAPTKDM4EF2KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 US claimed
US-7759045-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-20 US disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 US disclosed
CN-101334588-A Chemically amplified positive resist composition SUMITOMO CHEMICAL CO (JP) 2008-12-31 CN disclosed
US-6893794-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-05-17 US disclosed
US-20040018445-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-01-29 US disclosed
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 US disclosed