SCHEMBL2965577

SCHEMBL2965577

O=C1CCC(=O)N1OS(=O)(=O)c1cc(Cl)c(Cl)cc1Cl

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PARL Q9H300 2/20 0.50
▸ L3MBTL1 Q9Y468 1/20 0.44
▸ CNR1 P21554 1/20 0.37
▸ ALPL P05186 1/20 0.35
▸ ALPI P09923 1/20 0.35
▸ TSHR P16473 1/20 0.34
▸ KMT2A Q03164 4/20 0.33
▸ MEN1 O00255 3/20 0.33
▸ ALDH1A1 P00352 2/20 0.33
▸ LMNA P02545 2/20 0.33
▸ KDM4E B2RXH2 2/20 0.33
▸ HPGD P15428 2/20 0.33
▸ SMN1; SMN2 Q16637 2/20 0.33
▸ F2 P00734 1/20 0.33
▸ MAPT P10636 1/20 0.33
▸ HTT P42858 1/20 0.33
▸ POLB P06746 1/20 0.33
▸ TDP1 Q9NUW8 1/20 0.32
▸ CA12 O43570 1/20 0.32
▸ CA1 P00915 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4827251 0.79 L3MBTL1 (0.40) L3MBTL1CNR1ALPLALPITSHR
SCHEMBL4829728 0.79 L3MBTL1 (0.41) L3MBTL1CNR1ALPLALPITSHR
SCHEMBL16990198 0.76 PARL (0.50) PARLL3MBTL1CNR1KMT2AMEN1
SCHEMBL11026407 0.76 KDM4E (0.60) L3MBTL1KMT2AMEN1ALDH1A1LMNA
SCHEMBL1607770 0.71 PARL (0.68) PARLL3MBTL1KMT2AMEN1ALDH1A1
SCHEMBL12339094 0.71 PARL (0.81) PARLKMT2AMEN1ALDH1A1LMNA
SCHEMBL3823911 0.70 KMT2A (0.45) ALPLALPIKMT2AMEN1ALDH1A1
SCHEMBL3870272 0.70 PARL (0.51) PARLCNR1TSHRKMT2AMEN1
SCHEMBL22251627 0.69 PARL (0.76) PARLL3MBTL1KMT2AMEN1ALDH1A1
SCHEMBL2958322 0.69 ALDH1A1 (0.65) PARLL3MBTL1TSHRKMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 — — US claimed
US-7759045-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-20 — — US disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 — — US disclosed
CN-101334588-A Chemically amplified positive resist composition SUMITOMO CHEMICAL CO (JP) 2008-12-31 — — CN disclosed
US-6893794-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-05-17 — — US disclosed
US-20040018445-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-01-29 — — US disclosed
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 — — US disclosed
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