Water

Water

SCHEMBL319959

CC[N+](CC)(CC)CCO.[OH-]

nearest known ligand 0.50

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.44
NFKB1 P19838 1/20 0.44
KCNA1 Q09470 1/20 0.44
KDM4E B2RXH2 1/20 0.41
PMP22 Q01453 1/20 0.41
ATM Q13315 1/20 0.41
DNM1 Q05193 6/20 0.41
MEN1 O00255 1/20 0.40
LMNA P02545 1/20 0.40
KMT2A Q03164 1/20 0.40
CYP3A4 P08684 1/20 0.40
SLC5A7 Q9GZV3 1/20 0.40
SLC22A1 O15245 1/20 0.32
ALDH1A1 P00352 1/20 0.31
CHRNB2 P17787 1/20 0.30
CHRNB4 P30926 1/20 0.30
CHRNA3 P32297 1/20 0.30
CHRNA7 P36544 1/20 0.30
CHRNA4 P43681 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL476985 0.97 TSHR (0.47) TSHRNFKB1KCNA1KDM4EPMP22
Water SCHEMBL27490218 0.93 TSHR (0.44) TSHRNFKB1KCNA1KDM4EPMP22
Iodide SCHEMBL2352341 0.93 TSHR (0.44) TSHRNFKB1KCNA1KDM4EPMP22
Hydrochloric Acid SCHEMBL715477 0.93 KDM4E (0.50) TSHRNFKB1KCNA1KDM4EPMP22
Fluoride Ion SCHEMBL17870608 0.93 TSHR (0.44) TSHRNFKB1KCNA1KDM4EPMP22
Water SCHEMBL2032857 0.93 TSHR (0.44) TSHRNFKB1KCNA1KDM4EPMP22
Bromide SCHEMBL8461151 0.93 MEN1 (0.47) TSHRNFKB1KCNA1KDM4EPMP22
Water SCHEMBL3304873 0.93 TSHR (0.44) TSHRNFKB1KCNA1KDM4EPMP22
SCHEMBL1686254 0.90 TSHR (0.47) TSHRNFKB1KCNA1KDM4EPMP22
SCHEMBL1686196 0.90 TSHR (0.47) TSHRNFKB1KCNA1KDM4EPMP22

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 810 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115651162-B Polyisocyanate composition with low free monomer, high compatibility and good dilution stability and preparation method thereof 万华化学集团股份有限公司 2025-02-18 CN claimed
CN-118814176-A Cleaning composition for chip after chemical mechanical polishing, preparation method and application thereof 浙江奥首材料科技有限公司 2024-10-22 CN claimed
CN-118652735-A Low-corrosion chip photoresist cleaning solution and preparation method and application thereof 江苏奥首材料科技有限公司 2024-09-17 CN claimed
CN-118339245-A Polishing slurry composition 凯斯科技股份有限公司 2024-07-12 CN claimed
CN-118125467-A Preparation method and application of Nb-Beta molecular sieve 中国科学院大连化学物理研究所 2024-06-04 CN claimed
CN-117946812-A Cleaning composition 安集微电子科技(上海)股份有限公司 2024-04-30 CN claimed
WO-2024083019-A1 CLEANING COMPOSITION 安集微电子科技(上海)股份有限公司 2024-04-25 WO claimed
CN-117761977-A Corrosion-resistant alkaline developer 国科天骥(滨州)新材料有限责任公司 2024-03-26 CN claimed
CN-117106528-A Semiconductor substrate cleaning liquid composition JL化学株式会社 2023-11-24 CN claimed
CN-116661263-A Low-aluminum corrosion developer and preparation method and application thereof 艾森半导体材料(南通)有限公司 2023-08-29 CN claimed
EP-1027415-A1 CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE Kyzen Corporation (US) 2000-08-16 EP claimed
WO-1999016855-A1 CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE KYZEN CORPORATION (US) 1999-04-08 WO claimed
US-5846695-A Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1998-12-08 US claimed
US-5693599-A Flux washing agent MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1997-12-02 US claimed
EP-0463423-B1 Surface treating agent for aluminum line pattern substrate MITSUBISHI GAS CHEMICAL CO (JP) 1995-08-30 EP claimed
US-5174816-A SURFACE TREATING AGENT FOR ALUMINUM LINE PATTERN SUBSTRATE MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1992-12-29 US claimed
EP-0463423-A1 Surface treating agent for aluminum line pattern substrate MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1992-01-02 EP claimed
US-4339340-A HYDROXYLAKYL/TRIALKYLAMMONIUM HYDROXIDE TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) 1982-07-13 US claimed
US-4239661-A HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) 1980-12-16 US claimed
US-4172005-A Method of etching a semiconductor substrate TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) 1979-10-23 US claimed