SCHEMBL3264447

SCHEMBL3264447

CCOC(C)Oc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
APP P05067 1/20 0.47
STAT3 P40763 1/20 0.43
ABCG2 Q9UNQ0 3/20 0.43
MAOB P27338 1/20 0.43
CA12 O43570 2/20 0.42
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
CA7 P43166 2/20 0.42
CA9 Q16790 2/20 0.42
CA14 Q9ULX7 2/20 0.42
TTR P02766 2/20 0.41
CYP1A1 P04798 2/20 0.41
ALOX5 P09917 2/20 0.41
PTGS2 P35354 2/20 0.41
CYP1B1 Q16678 2/20 0.41
KDM4E B2RXH2 2/20 0.41
MAPT P10636 2/20 0.41
MEN1 O00255 1/20 0.41
NPC1 O15118 1/20 0.41
ABL1 P00519 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6550242 0.87 ABCG2 (0.50) APPSTAT3ABCG2MAOBTTR
SCHEMBL5963165 0.87 LTA4H (0.47) CA12CA1CA2CA7CA9
Acrylic Acid Methyl Ester SCHEMBL7263902 0.87 CA12 (0.44) STAT3ABCG2MAOBCA12CA1
SCHEMBL3839200 0.87 APP (0.46) APPSTAT3ABCG2MAOBCA12
SCHEMBL6550872 0.86 STAT3 (0.42) STAT3ABCG2MAOBCA12CA1
4-Vinylphenol SCHEMBL8516846 0.85 CHRNB2 (0.38) ABCG2MAOBCA12CA1CA2
SCHEMBL27224304 0.85 PTGS2 (0.54) APPMAOBCA12CA1CA2
SCHEMBL6833601 0.84 APP (0.43) APPSTAT3ABCG2MAOBCA12
SCHEMBL6550911 0.84 APP (0.53) APPSTAT3MAOBCA12CA1
SCHEMBL7101076 0.84 CA12 (0.39) APPSTAT3ABCG2MAOBCA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6586152-B1 Useful as an ingredient of a resist composition used for preparation of semiconductor devices and the like, which comprises a compound shown by the following general formula useful as an ingredient of a resist composition used for WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-07-01 US claimed
US-6303264-B1 PROFILE OF PATTERN OF QUARTER MICRON ORDER WITHOUT CAUSING FOOTING, WHILE RETAINING HIGH RESOLUTION ABILITY AND HIGH SENSITIVITY WAKO PURE CHEMICAL INDUSTRIES, LTD (JP) 2001-10-16 US claimed
JP-11001552-A None JP disclosed
US-20210108065-A1 POLYMERS AND PHOTORESIST COMPOSITIONS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC 2021-04-15 US disclosed
EP-0989460-B1 PATTERN FORMING METHOD AZ ELECTRONIC MATERIALS USA (US) 2010-05-26 EP disclosed
EP-1449833-B1 BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION WAKO PURE CHEM IND LTD (JP) 2009-09-09 EP disclosed
US-7374857-B2 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2008-05-20 US disclosed
EP-1314725-B1 SULFONIUM SALT COMPOUND WAKO PURE CHEM IND LTD (JP) 2008-03-19 EP disclosed
EP-0908473-B1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHINETSU CHEMICAL CO (JP) 2006-02-01 EP disclosed
US-6924323-B2 Sulfonium salt compound WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2005-08-02 US disclosed
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2005-02-17 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed
EP-0691674-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-01-10 EP disclosed
US-5468589-A Heat resistant, photosensitive patterns WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1995-11-21 US disclosed
EP-0675410-A1 Resist composition for deep ultraviolet light WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1995-10-04 EP disclosed
US-5389491-A Negative working resist composition MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1995-02-14 US disclosed
EP-0595361-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1994-05-04 EP disclosed
EP-0588544-A2 Fine pattern forming material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1994-03-23 EP disclosed
EP-0579420-A2 Negative working resist material and pattern forming process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1994-01-19 EP disclosed
EP-0520642-A1 Resist material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1992-12-30 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20050038261-A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition ASIC1, GAR1, RER1 APP 928/4885STAT3 4778/4885ABCG2 1554/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.