SCHEMBL328663

SCHEMBL328663

C=C(C)C(=O)OCC(=O)OC1COC(=O)C1

nearest known ligand 0.42

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.42
PTPN1 P18031 1/20 0.34
TSHR P16473 3/20 0.33
THRB P10828 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17247239 0.88 ALDH1A1 (0.41) ALDH1A1PTPN1TSHRTHRB
SCHEMBL76528 0.84 ALDH1A1 (0.39) ALDH1A1PTPN1
SCHEMBL16372849 0.83 PTPN1 (0.32) PTPN1
SCHEMBL21135142 0.82 PTPN1 (0.35) PTPN1
SCHEMBL25129601 0.80 PTPN1 (0.33) PTPN1
SCHEMBL19101361 0.79 ALDH1A1 (0.38) ALDH1A1PTPN1TSHR
SCHEMBL16372848 0.79 PTPN1 (0.35) ALDH1A1PTPN1TSHR
SCHEMBL23474825 0.79 PTPN1 (0.30) PTPN1
SCHEMBL12883848 0.78 ALDH1A1 (0.35) ALDH1A1TSHR
SCHEMBL14944749 0.77 ALDH1A1 (0.44) ALDH1A1TSHRTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
US-11487203-B2 Monomers, polymers and photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-01 US disclosed
US-11016388-B2 Overcoat compositions and methods for photolithography ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-05-25 US disclosed
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 US disclosed
US-10564542-B2 Photoresist compositions and methods DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2020-02-18 US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 US disclosed
US-20180059545-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2018-03-01 US disclosed
US-20170090287-A1 OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-03-30 US disclosed
US-20120129108-A1 BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-05-24 US disclosed
US-20120129108-A1 BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-05-24 US disclosed
EP-2452932-A2 Base reactive photoacid generators and photoresists comprising same Rohm and Haas Electronic Materials LLC (US) 2012-05-16 EP disclosed
US-20120077120-A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-03-29 US disclosed
US-20120077120-A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-03-29 US disclosed
EP-2428842-A1 Photoresists comprising multi-amide component Rohm and Haas Electronic Materials LLC (US) 2012-03-14 EP disclosed
US-8105760-B2 Patterning process and pattern surface coating composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8105760-B2 Patterning process and pattern surface coating composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11016388-B2 Overcoat compositions and methods for photolithography OGT, COLGALT1, PARG ALDH1A1 2382/4885PTPN1 962/4885TSHR 4812/4885
US-10564542-B2 Photoresist compositions and methods PARG, PNN, PARN ALDH1A1 4826/4885PTPN1 1643/4885TSHR 4722/4885
US-10719014-B2 Photoresists comprising amide component ASPH, ALAD, SUN2 ALDH1A1 823/4885PTPN1 4543/4885TSHR 4127/4885
US-20170090287-A1 OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY OGT, COLGALT1, PARG ALDH1A1 2382/4885PTPN1 962/4885TSHR 4812/4885
US-11487203-B2 Monomers, polymers and photoresist compositions MAP1LC3C, LCP1, PIN1 ALDH1A1 2061/4885PTPN1 2710/4885TSHR 4290/4885
US-20120129108-A1 BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ALAD, APEX1, HMBS ALDH1A1 1611/4885PTPN1 4581/4885TSHR 3784/4885
US-20180059545-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS PARG, LCP1, ALG3 ALDH1A1 894/4885PTPN1 2814/4885TSHR 4727/4885
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS MAP1LC3C, LCP1, PIN1 ALDH1A1 2061/4885PTPN1 2710/4885TSHR 4290/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.