Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | FAAH | O00519 | 1/20 | 0.32 |
| ▸ | PHGDH | O43175 | 1/20 | 0.32 |
| ▸ | MGLL | Q99685 | 1/20 | 0.32 |
| ▸ | CA12 | O43570 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | CA9 | Q16790 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | ESR1 | P03372 | 1/20 | 0.30 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10664430 | 0.82 | NPSR1 (0.30) | NPSR1 | |
| SCHEMBL28307829 | 0.81 | ESR1 (0.33) | FAAHPHGDHMGLLCA12CA1 | |
| SCHEMBL25883862 | 0.77 | KMT2A (0.34) | NPSR1FAAHPHGDHMGLLCA12 | |
| SCHEMBL133920 | 0.77 | NPSR1 (0.32) | NPSR1 | |
| SCHEMBL9684588 | 0.75 | ALDH1A1 (0.31) | — | |
| SCHEMBL2891504 | 0.74 | NPSR1 (0.30) | NPSR1 | |
| SCHEMBL9358985 | 0.73 | OPRM1 (0.33) | FAAHPHGDHMGLLCA12CA1 | |
| SCHEMBL14369578 | 0.69 | ALDH1A1 (0.35) | NPSR1KMT2AMEN1HTTKDM4E | |
| SCHEMBL2463903 | 0.67 | ALDH1A1 (0.33) | NPSR1KMT2AMEN1HTTKDM4E | |
| SCHEMBL2276954 | 0.66 | ESR1 (0.37) | KMT2AMEN1HTTLMNAESR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9293417-B2 | Method for forming barrier film on wiring line | TOKYO ELECTRON LIMITED (JP) | 2016-03-22 | — | — | US | claimed |
| US-8709541-B2 | Method for forming a film | TOKYO ELECTRON LIMITED (JP) | 2014-04-29 | — | — | US | claimed |
| US-20120251721-A1 | DEVICE AND METHOD FOR FORMING FILM | TOKYO ELECTRON LIMITED (JP) | 2012-10-04 | — | — | US | claimed |
| US-20120114869-A1 | FILM FORMING METHOD | TOKYO ELECTRON LIMITED (JP) | 2012-05-10 | — | — | US | claimed |
| US-7576413-B2 | Packaged stacked semiconductor device and method for manufacturing the same | KYUSHU INSTITUTE OF TECHNOLOGY (JP) | 2009-08-18 | — | — | US | claimed |
| US-20080061402-A1 | Packaged Stacked Semiconductor Device And Method For Manufacturing The Same | INVENSAS LLC | 2008-03-13 | — | — | US | claimed |
| US-7129187-B2 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films | TOKYO ELECTRON LIMITED (JP) | 2006-10-31 | — | — | US | claimed |
| WO-2006019438-A2 | LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS | TOKYO ELECTRON LIMITED (JP) | 2006-02-23 | — | — | WO | claimed |
| US-20060014399-A1 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films | TOKYO ELECTRON LIMITED | 2006-01-19 | — | — | US | claimed |
| EP-0310320-B1 | Curable composition | JAPAN SYNTHETIC RUBBER CO LTD (JP) | 1994-12-28 | — | — | EP | claimed |
| US-4923948-A | Curable composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1990-05-08 | — | — | US | claimed |
| EP-0310320-A2 | Curable composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1989-04-05 | — | — | EP | claimed |
| EP-3650416-B1 | COATED GLASS PANE COMPRISING AN UNDERLAYER AND A SMOOTH LAYER BASED ON SILICA AND/OR ORGANO SILICA | PILKINGTON GROUP LTD (GB) | 2024-04-17 | — | — | EP | disclosed |
| US-20230197509-A1 | WET FUNCTIONALIZATION OF DIELECTRIC SURFACES | LAM RESEARCH CORPORATION | 2023-06-22 | — | — | US | disclosed |
| CN-115769362-A | Wet functionalization of dielectric surfaces | 朗姆研究公司 | 2023-03-07 | — | — | CN | disclosed |
| US-20220355581-A1 | INTERLAYER FILM FOR LAMINATED GLASS, AND LAMINATED GLASS | SEKISUI CHEMICAL CO., LTD. (JP) | 2022-11-10 | — | — | US | disclosed |
| US-4656300-A | Process for a thermal treatment of a polysilazane containing .tbd.SiH groups and .tbd.Si--NH-- groups | RHONE POULENC SPECIALITES CHIMIQUES (FR) | 1987-04-07 | — | — | US | disclosed |
| EP-0208630-A1 | Process for treating a polysilazane having at least two =/- SiH groups with a cationic catalyst | RHONE-POULENC CHIMIE (FR) | 1987-01-14 | — | — | EP | disclosed |
| EP-0202176-A1 | Process for treating polyorganosilazanes and/or polyorgano(disilyl)silazanes with a catalyst comprising a mineral ionic salt and a complexing agent | RHONE-POULENC CHIMIE (FR) | 1986-11-20 | — | — | EP | disclosed |
| EP-0197863-A1 | Process for preparing organosilazanes and organopoly(disilyl)silazanes with an enhanced heat stability, and their use in preparing ceramic materials | RHONE-POULENC CHIMIE (FR) | 1986-10-15 | — | — | EP | disclosed |