Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SHBG | P04278 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.31 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29101113 | 0.98 | SHBG (0.44) | SHBGSMN1; SMN2EPHX1CYP1A2 | |
| SCHEMBL3313678 | 0.98 | SHBG (0.44) | SHBGSMN1; SMN2EPHX1CYP1A2 | |
| SCHEMBL8167641 | 0.95 | SHBG (0.36) | SHBG | |
| SCHEMBL8162081 | 0.90 | SHBG (0.31) | SHBGSMN1; SMN2 | |
| SCHEMBL21419797 | 0.83 | SHBG (0.40) | SHBGEPHX1CYP1A2 | |
| SCHEMBL21175625 | 0.81 | TSHR (0.40) | SHBGEPHX1CYP1A2 | |
| SCHEMBL21175623 | 0.81 | TSHR (0.40) | SHBGEPHX1CYP1A2 | |
| SCHEMBL27481649 | 0.81 | TSHR (0.40) | SHBGEPHX1CYP1A2 | |
| SCHEMBL11555898 | 0.81 | TSHR (0.40) | SHBGEPHX1CYP1A2 | |
| SCHEMBL3313653 | 0.80 | SHBG (0.50) | SHBGSMN1; SMN2EPHX1CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | claimed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | claimed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | claimed |
| US-20230026579-A1 | METHOD FOR FORMING PHOTORESIST PATTERNS | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230026721-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230028244-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO., LTD. (KR) | 2023-01-26 | — | — | US | claimed |
| US-12631966-B2 | Method for forming photoresist patterns | SAMSUNG SDI CO., LTD. (KR) | 2026-05-19 | — | — | US | disclosed |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-03-31 | — | — | US | disclosed |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-19 | — | — | US | disclosed |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | SAMSUNG SDI CO., LTD. (KR) | 2026-02-17 | — | — | US | disclosed |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-02-05 | — | — | US | disclosed |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | SAMSUNG SDI CO LTD (KR) | 2026-01-01 | — | — | US | disclosed |
| US-9052600-B2 | Method for forming resist pattern and composition for forming protective film | JSR CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-8497062-B2 | Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method | JSR CORPORATION (JP) | 2013-07-30 | — | — | US | disclosed |
| US-20130059252-A1 | METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM | JSR CORPORATION (JP) | 2013-03-07 | — | — | US | disclosed |
| US-20100112475-A1 | RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2010-05-06 | — | — | US | disclosed |
| US-6037477-A | CONTACTING AN ETHER WITH OXYGEN IN THE PRESENCE OF AN OXIDATION CATALYST TO PRODUCE ESTER OR ANHYDRIDE | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2000-03-14 | — | — | US | disclosed |
| EP-0878458-A1 | Oxidation process of ethers | Daicel Chemical Industries, Ltd. (JP) | 1998-11-18 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230024422-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | TOP1, TOP2A, FTO | SHBG 1843/4885SMN1; SMN2 1509/4885EPHX1 1030/4885 |
| US-12631966-B2 | Method for forming photoresist patterns | FTO, SOAT1, SOAT2 | SHBG 3131/4885SMN1; SMN2 4022/4885EPHX1 1589/4885 |
| US-12554199-B2 | Resist topcoat composition, and method of forming patterns using the composition | FGFR2, FGFR1, FDFT1 | SHBG 2684/4885SMN1; SMN2 1796/4885EPHX1 2868/4885 |
| US-20260036906-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, RER1, CPT1B | SHBG 906/4885SMN1; SMN2 719/4885EPHX1 2600/4885 |
| US-20260003286-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | RER1, CPT1A, SOAT1 | SHBG 561/4885SMN1; SMN2 613/4885EPHX1 2463/4885 |
| US-20230021469-A1 | RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | COL2A1, TOP1, TOP2A | SHBG 1908/4885SMN1; SMN2 1108/4885EPHX1 2043/4885 |
| US-12590221-B2 | Resist topcoat composition, and method of forming patterns using the composition | RER1, TOP1, RRS1 | SHBG 1213/4885SMN1; SMN2 975/4885EPHX1 1015/4885 |
| US-20260050212-A1 | RESIST TOPCOAT COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION | CPT1A, COL1A1, RCOR1 | SHBG 954/4885SMN1; SMN2 2690/4885EPHX1 3161/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.