SCHEMBL3313653

SCHEMBL3313653

CCC(OC(CC)C1CCCC1)C1CCCC1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SHBG P04278 2/20 0.50
EPHX1 P07099 2/20 0.33
KDM4E B2RXH2 2/20 0.33
TP53 P04637 2/20 0.31
CYP2D6 P10635 2/20 0.30
LMNA P02545 2/20 0.30
MEN1 O00255 1/20 0.30
ALDH1A1 P00352 1/20 0.30
CYP1A2 P05177 1/20 0.30
TSHR P16473 1/20 0.30
KMT2A Q03164 1/20 0.30
MLNR O43193 1/20 0.30
ABCB11 O95342 1/20 0.30
EGFR P00533 1/20 0.30
FYN P06241 1/20 0.30
CHRM2 P08172 1/20 0.30
CHRM4 P08173 1/20 0.30
HTR1A P08908 1/20 0.30
CHRM5 P08912 1/20 0.30
ADRA2A P08913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3315393 0.97 SHBG (0.54) SHBGEPHX1KDM4ETP53CYP2D6
SCHEMBL29101111 0.97 SHBG (0.54) SHBGEPHX1KDM4ETP53CYP2D6
SCHEMBL8167847 0.95 SHBG (0.44) SHBG
SCHEMBL8163759 0.89 SHBG (0.39) SHBGTSHR
SCHEMBL21402598 0.81 SHBG (0.43) SHBGEPHX1KDM4ETP53LMNA
SCHEMBL5182922 0.80 SHBG (0.46) SHBGEPHX1KDM4ETP53LMNA
SCHEMBL21938074 0.80 SHBG (0.52) SHBGEPHX1KDM4ETP53CYP2D6
SCHEMBL3319013 0.80 SHBG (0.41) SHBGEPHX1CYP1A2SMN1; SMN2
SCHEMBL29101113 0.78 SHBG (0.44) SHBGEPHX1KDM4ETP53LMNA
SCHEMBL2607861 0.78 SHBG (0.50) SHBGEPHX1KDM4ETP53LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 173 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631966-B2 Method for forming photoresist patterns SAMSUNG SDI CO., LTD. (KR) 2026-05-19 US claimed
US-12590221-B2 Resist topcoat composition, and method of forming patterns using the composition SAMSUNG SDI CO., LTD. (KR) 2026-03-31 US claimed
US-12554199-B2 Resist topcoat composition, and method of forming patterns using the composition SAMSUNG SDI CO., LTD. (KR) 2026-02-17 US claimed
US-20230026579-A1 METHOD FOR FORMING PHOTORESIST PATTERNS SAMSUNG SDI CO., LTD. (KR) 2023-01-26 US claimed
US-20230026721-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG SDI CO., LTD. (KR) 2023-01-26 US claimed
US-20230028244-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG SDI CO., LTD. (KR) 2023-01-26 US claimed
US-20230024422-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG SDI CO., LTD. (KR) 2023-01-26 US claimed
US-20230021469-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-01-26 US claimed
US-12631966-B2 Method for forming photoresist patterns SAMSUNG SDI CO., LTD. (KR) 2026-05-19 US disclosed
US-12619150-B2 Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-05-05 US disclosed
EP-4184248-B1 COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND AND POLYMER FOR FORMING ORGANIC FILM SHINETSU CHEMICAL CO (JP) 2026-04-15 EP disclosed
US-20260101693-A1 MATERIAL FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, COMPOUND FOR FORMING ORGANIC FILM, AND AROMATIC CARBOXYLIC ANHYDRIDE SHIN-ETSU CHEMICAL CO, LTD. (JP) 2026-04-09 US disclosed
EP-4722194-A2 MATERIAL FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, COMPOUND FOR FORMING ORGANIC FILM, AND AROMATIC CARBOXYLIC ANHYDRIDE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-08 EP disclosed
US-12590221-B2 Resist topcoat composition, and method of forming patterns using the composition SAMSUNG SDI CO., LTD. (KR) 2026-03-31 US disclosed
US-9052600-B2 Method for forming resist pattern and composition for forming protective film JSR CORPORATION (JP) 2015-06-09 US disclosed
US-8497062-B2 Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method JSR CORPORATION (JP) 2013-07-30 US disclosed
US-20130059252-A1 METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM JSR CORPORATION (JP) 2013-03-07 US disclosed
US-20100112475-A1 RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2010-05-06 US disclosed
US-6037477-A CONTACTING AN ETHER WITH OXYGEN IN THE PRESENCE OF AN OXIDATION CATALYST TO PRODUCE ESTER OR ANHYDRIDE DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-14 US disclosed
EP-0878458-A1 Oxidation process of ethers Daicel Chemical Industries, Ltd. (JP) 1998-11-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20230024422-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION TOP1, TOP2A, FTO SHBG 1843/4885EPHX1 1030/4885KDM4E 1447/4885
US-12631966-B2 Method for forming photoresist patterns FTO, SOAT1, SOAT2 SHBG 3131/4885EPHX1 1589/4885KDM4E 915/4885
US-12554199-B2 Resist topcoat composition, and method of forming patterns using the composition FGFR2, FGFR1, FDFT1 SHBG 2684/4885EPHX1 2868/4885KDM4E 945/4885
US-20260101693-A1 MATERIAL FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, COMPOUND FOR FORMING ORGANIC FILM, AND AROMATIC CARBOXYLIC ANHYDRIDE RAD51, PIEZO1, F12 SHBG 3808/4885EPHX1 608/4885KDM4E 1174/4885
US-20230021469-A1 RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION COL2A1, TOP1, TOP2A SHBG 1908/4885EPHX1 2043/4885KDM4E 3518/4885
US-12590221-B2 Resist topcoat composition, and method of forming patterns using the composition RER1, TOP1, RRS1 SHBG 1213/4885EPHX1 1015/4885KDM4E 3318/4885
US-12619150-B2 Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film FN1, POF1B, MTX1 SHBG 463/4885EPHX1 178/4885KDM4E 1393/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.