SCHEMBL3481484

SCHEMBL3481484

CO[Si](c1ccccc1)(c1ccccc1)c1cc(C)cc(C)c1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.35
ACHE P22303 3/20 0.35
TSHR P16473 2/20 0.35
ALOX12 P18054 1/20 0.35
MAPT P10636 6/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
ATM Q13315 1/20 0.34
SQOR Q9Y6N5 1/20 0.33
TP53 P04637 1/20 0.33
TACR1 P25103 5/20 0.32
ADORA2A P29274 1/20 0.32
ADORA1 P30542 1/20 0.32
KDM4E B2RXH2 3/20 0.32
ALDH1A1 P00352 3/20 0.32
L3MBTL1 Q9Y468 3/20 0.32
HPGD P15428 2/20 0.32
TDP1 Q9NUW8 1/20 0.32
NPSR1 Q6W5P4 2/20 0.31
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL49088 0.84 CA4 (0.41) LMNAACHETSHRALOX12MAPT
SCHEMBL3482517 0.83 ACHE (0.43) LMNAACHETSHRALOX12MAPT
SCHEMBL705043 0.82 ESR1 (0.41) LMNAACHETSHRALOX12MAPT
SCHEMBL3482480 0.79 LMNA (0.35) LMNAACHETSHRALOX12MAPT
SCHEMBL3481888 0.79 MAPT (0.34) LMNAACHETSHRALOX12MAPT
SCHEMBL3481718 0.76 DUT (0.36) LMNATSHRMAPTMEN1KMT2A
SCHEMBL24390119 0.75 LTA4H (0.45) TSHRMAPTMEN1KMT2AALDH1A1
SCHEMBL5416836 0.74 ESR1 (0.35) CA4
SCHEMBL8636462 0.73 CA4 (0.36) TSHRMAPTMEN1KMT2AATM
SCHEMBL9471744 0.73 ACHE (0.41) LMNAACHETSHRALOX12MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed