SCHEMBL3481888

SCHEMBL3481888

CCO[Si](c1ccccc1)(c1ccccc1)c1cc(C)cc(C)c1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.34
POLB P06746 1/20 0.34
TACR1 P25103 6/20 0.33
MAPK1 P28482 2/20 0.32
KDM4E B2RXH2 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
DUT P33316 1/20 0.32
CYP11B1 P15538 1/20 0.32
CYP11B2 P19099 1/20 0.32
NPC1 O15118 1/20 0.32
ALDH1A1 P00352 1/20 0.32
RAB9A P51151 1/20 0.32
LMNA P02545 2/20 0.31
TP53 P04637 1/20 0.31
TSHR P16473 1/20 0.31
ALOX12 P18054 1/20 0.31
ACHE P22303 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL238216 0.86 DUT (0.38) MAPTPOLBKDM4EL3MBTL1DUT
SCHEMBL3481718 0.86 DUT (0.36) MAPTPOLBTACR1DUTCYP11B1
SCHEMBL3482014 0.85 HPGD (0.39) MAPTPOLBTDP1DUTNPC1
SCHEMBL703379 0.84 ESR1 (0.37) MAPTPOLBKDM4EL3MBTL1DUT
SCHEMBL3482226 0.81 TACR1 (0.33) MAPTPOLBTACR1MAPK1KDM4E
SCHEMBL3481484 0.79 LMNA (0.35) MAPTTACR1MAPK1KDM4ETDP1
SCHEMBL9249663 0.77 DUT (0.36) MAPTKDM4EL3MBTL1DUTNPC1
SCHEMBL8639537 0.76 L3MBTL1 (0.33) MAPTPOLBKDM4EL3MBTL1DUT
SCHEMBL3867374 0.76 ACHE (0.38) MAPTPOLBTDP1NPC1ALDH1A1
SCHEMBL3482491 0.76 TP53 (0.48) MAPTPOLBMAPK1KDM4EL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed