SCHEMBL3481718

SCHEMBL3481718

CCCO[Si](c1ccccc1)(c1ccccc1)c1cc(C)cc(C)c1

nearest known ligand 0.36

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
DUT P33316 1/20 0.36
TLR8 Q9NR97 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
RAB9A P51151 1/20 0.33
LMNA P02545 1/20 0.33
TACR1 P25103 2/20 0.31
ADORA2A P29274 1/20 0.31
ADORA1 P30542 1/20 0.31
TSHR P16473 1/20 0.31
SOAT1 P35610 1/20 0.31
CYP11B1 P15538 1/20 0.30
CYP11B2 P19099 1/20 0.30
HPGD P15428 1/20 0.30
FGFR1 P11362 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703110 0.87 DUT (0.42) DUTTLR8ALDH1A1MEN1KMT2A
SCHEMBL3481888 0.86 MAPT (0.34) DUTALDH1A1MEN1KMT2APOLB
SCHEMBL3482024 0.86 DUT (0.38) DUTALDH1A1MEN1KMT2APOLB
SCHEMBL703766 0.85 DUT (0.41) DUTALDH1A1MEN1KMT2ALMNA
SCHEMBL3481508 0.83 TLR8 (0.33) TLR8ALDH1A1MEN1KMT2APOLB
SCHEMBL3867721 0.77 ACHE (0.35) ALDH1A1MEN1KMT2APOLBMAPT
SCHEMBL3482155 0.77 TP53 (0.45) DUTALDH1A1MEN1KMT2AMAPT
SCHEMBL705748 0.76 DUT (0.47) DUTTLR8ALDH1A1TSHRSOAT1
SCHEMBL3481484 0.76 LMNA (0.35) ALDH1A1MEN1KMT2AMAPTLMNA
SCHEMBL708046 0.74 DUT (0.46) DUTTLR8ALDH1A1TSHRSOAT1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed