SCHEMBL3482014

SCHEMBL3482014

CCO[Si](c1ccccc1)(c1ccccc1)c1ccc(C)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HPGD P15428 2/20 0.39
LMNA P02545 2/20 0.39
TSHR P16473 1/20 0.39
ALOX12 P18054 1/20 0.39
ACHE P22303 1/20 0.39
HTT P42858 1/20 0.37
MAPT P10636 2/20 0.35
SMN1; SMN2 Q16637 3/20 0.35
NPC1 O15118 3/20 0.34
RAB9A P51151 3/20 0.34
NFKB1 P19838 2/20 0.34
NFKB2 Q00653 2/20 0.34
RELA Q04206 2/20 0.34
ALDH1A1 P00352 2/20 0.34
NPSR1 Q6W5P4 2/20 0.34
GLA P06280 1/20 0.34
TDP1 Q9NUW8 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
DUT P33316 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703379 0.92 ESR1 (0.37) HPGDTSHRACHEMAPTSMN1; SMN2
SCHEMBL3867374 0.92 ACHE (0.38) ACHEHTTMAPTSMN1; SMN2NPC1
SCHEMBL238216 0.89 DUT (0.38) HPGDTSHRACHEMAPTSMN1; SMN2
SCHEMBL3481888 0.85 MAPT (0.34) LMNATSHRALOX12ACHEMAPT
SCHEMBL3482024 0.85 DUT (0.38) HPGDLMNATSHRALOX12ACHE
SCHEMBL3481554 0.84 LMNA (0.39) HPGDLMNATSHRALOX12ACHE
SCHEMBL3482491 0.82 TP53 (0.48) LMNAHTTMAPTSMN1; SMN2NPC1
SCHEMBL9249663 0.80 DUT (0.36) HPGDTSHRACHEMAPTSMN1; SMN2
SCHEMBL8639537 0.79 L3MBTL1 (0.33) HPGDTSHRACHEMAPTSMN1; SMN2
SCHEMBL13870133 0.79 ACHE (0.46) HPGDLMNATSHRALOX12ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0193643-A2 Curable resin composition KABUSHIKI KAISHA TOSHIBA (JP) 1986-09-10 EP disclosed