SCHEMBL3481700

SCHEMBL3481700

CCCO[Si](C)(C)c1ccc(C)cc1

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.33
TDP1 Q9NUW8 1/20 0.33
ALDH1A1 P00352 1/20 0.31
POLB P06746 1/20 0.31
AGXT P21549 1/20 0.30
CYP19A1 P11511 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705459 0.91 CYP19A1 (0.32) ALDH1A1CYP19A1CYP2C9CYP2C19
SCHEMBL3482147 0.83 ACHE (0.33) ACHETDP1ALDH1A1POLBAGXT
SCHEMBL3481807 0.83 ACHE (0.36) ACHETDP1ALDH1A1AGXT
SCHEMBL8954017 0.82 MAPT (0.38) ACHETDP1ALDH1A1POLBCYP2C9
SCHEMBL3482299 0.82 TP53 (0.34) TDP1ALDH1A1
SCHEMBL704364 0.81 LMNA (0.38) ALDH1A1CYP19A1CYP2C9CYP2C19
SCHEMBL106488 0.81 ACHE (0.35) ACHETDP1ALDH1A1POLBAGXT
SCHEMBL3871457 0.81 ACHE (0.35) ACHETDP1ALDH1A1POLBAGXT
SCHEMBL3867721 0.81 ACHE (0.35) ACHETDP1ALDH1A1POLBAGXT
SCHEMBL3481583 0.80 CA1 (0.42) ACHETDP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed