SCHEMBL3481583

SCHEMBL3481583

CCCO[Si](C)(C)c1ccc(OC)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.42
CA2 P00918 2/20 0.42
CA7 P43166 2/20 0.42
CA9 Q16790 2/20 0.42
CA12 O43570 1/20 0.42
CA14 Q9ULX7 1/20 0.42
MAPT P10636 3/20 0.39
NR1I2 O75469 1/20 0.38
ACHE P22303 1/20 0.37
ALDH1A1 P00352 3/20 0.36
IDO1 P14902 1/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
SMN1; SMN2 Q16637 3/20 0.36
NPC1 O15118 3/20 0.36
RAB9A P51151 3/20 0.36
KDM4E B2RXH2 2/20 0.36
TDP1 Q9NUW8 3/20 0.35
MAPK1 P28482 2/20 0.35
GAA P10253 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705459 0.88 CYP19A1 (0.32) ALDH1A1SMN1; SMN2NPC1RAB9AKDM4E
SCHEMBL3482283 0.84 CA1 (0.46) CA1CA2CA7CA9CA12
SCHEMBL3482706 0.82 CA1 (0.44) CA1CA2CA7CA9CA12
SCHEMBL3481700 0.80 ACHE (0.33) ACHEALDH1A1TDP1
SCHEMBL705222 0.79 CYP2C9 (0.41) MAPTALDH1A1SMN1; SMN2NPC1RAB9A
SCHEMBL8954017 0.78 MAPT (0.38) CA1CA2CA9CA12MAPT
SCHEMBL3482299 0.78 TP53 (0.34) CA2MAPTALDH1A1IDO1SMN1; SMN2
SCHEMBL704364 0.78 LMNA (0.38) MAPTALDH1A1MEN1KMT2ASMN1; SMN2
SCHEMBL6746664 0.77 HTT (0.39) CA1CA2CA7CA9CA12
SCHEMBL3482078 0.74 CA1 (0.55) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed