SCHEMBL3481812

SCHEMBL3481812

CCCO[SiH](OCCC)c1ccc(C)cc1

nearest known ligand 0.35

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ACHE P22303 3/20 0.35
TDP1 Q9NUW8 1/20 0.35
ALDH1A1 P00352 3/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
MAPT P10636 1/20 0.33
THRB P10828 1/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
IDO1 P14902 2/20 0.31
POLB P06746 1/20 0.31
AGXT P21549 1/20 0.31
LMNA P02545 1/20 0.31
DRD2 P14416 1/20 0.31
DRD4 P21917 1/20 0.31
DRD3 P35462 1/20 0.31
WDR5 P61964 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704584 0.91 ALDH1A1 (0.35) TDP1ALDH1A1L3MBTL1MEN1KMT2A
SCHEMBL3481702 0.88 MEN1 (0.37) TDP1L3MBTL1MEN1KMT2ADRD2
SCHEMBL6746712 0.85 CYP2C19 (0.38) TDP1ALDH1A1L3MBTL1SMN1; SMN2MAPT
SCHEMBL22661018 0.83 LTA4H (0.47) ACHETDP1ALDH1A1SMN1; SMN2MAPT
SCHEMBL3482269 0.82 ACHE (0.38) ACHETDP1ALDH1A1SMN1; SMN2MAPT
SCHEMBL3482172 0.81 ALDH1A1 (0.42) TDP1ALDH1A1L3MBTL1SMN1; SMN2IDO1
SCHEMBL15735901 0.81 HTR7 (0.36) ACHETDP1ALDH1A1L3MBTL1SMN1; SMN2
SCHEMBL8953992 0.81 TSHR (0.41) TDP1ALDH1A1L3MBTL1MAPTMEN1
SCHEMBL313696 0.80 LMNA (0.44) TDP1ALDH1A1L3MBTL1SMN1; SMN2MEN1
SCHEMBL3482288 0.79 NR1I2 (0.48) ACHETDP1ALDH1A1SMN1; SMN2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed