SCHEMBL3482024

SCHEMBL3482024

CCCO[Si](c1ccccc1)(c1ccccc1)c1ccc(C)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DUT P33316 1/20 0.38
LMNA P02545 2/20 0.36
TSHR P16473 2/20 0.36
ALOX12 P18054 1/20 0.36
ACHE P22303 1/20 0.36
SMN1; SMN2 Q16637 3/20 0.35
POLB P06746 2/20 0.35
HPGD P15428 2/20 0.35
NPC1 O15118 1/20 0.35
NFKB1 P19838 1/20 0.35
RAB9A P51151 1/20 0.35
NFKB2 Q00653 1/20 0.35
RELA Q04206 1/20 0.35
ALDH1A1 P00352 3/20 0.35
MAPT P10636 3/20 0.35
ATM Q13315 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
DRD2 P14416 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3867721 0.92 ACHE (0.35) LMNATSHRACHESMN1; SMN2POLB
SCHEMBL703766 0.92 DUT (0.41) DUTLMNATSHRHPGDALDH1A1
SCHEMBL703110 0.90 DUT (0.42) DUTLMNATSHRHPGDALDH1A1
SCHEMBL3481718 0.86 DUT (0.36) DUTLMNATSHRPOLBHPGD
SCHEMBL3481473 0.85 LMNA (0.36) LMNATSHRALOX12ACHESMN1; SMN2
SCHEMBL3482014 0.85 HPGD (0.39) DUTLMNATSHRALOX12ACHE
SCHEMBL3482155 0.84 TP53 (0.45) DUTLMNATSHRSMN1; SMN2NPC1
SCHEMBL708046 0.81 DUT (0.46) DUTTSHRALDH1A1
SCHEMBL3868237 0.81 MEN1 (0.36) DUTLMNATSHRSMN1; SMN2NPC1
SCHEMBL705748 0.79 DUT (0.47) DUTTSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed