SCHEMBL3482399

SCHEMBL3482399

CCCCO[SiH](OCCCC)c1cc(C)cc(C)c1

nearest known ligand 0.42

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CNR1 P21554 3/20 0.40
CNR2 P34972 3/20 0.40
ESR1 P03372 3/20 0.35
THRA P10827 1/20 0.33
THRB P10828 1/20 0.33
TSHR P16473 3/20 0.33
TP53 P04637 1/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C9 P11712 1/20 0.33
CYP2C19 P33261 1/20 0.33
PDE4D Q08499 1/20 0.33
LTA4H P09960 1/20 0.32
NR5A1 Q13285 1/20 0.32
PLA2G4B P0C869 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
ELANE P08246 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482099 0.88 ALDH1A1 (0.33) CNR1CNR2ELANE
SCHEMBL3481702 0.80 MEN1 (0.37) TSHRTP53LTA4HNR5A1PLA2G4B
SCHEMBL3482040 0.79 ALDH1A1 (0.32) TSHR
SCHEMBL705460 0.79 LTA4H (0.41) ESR1TSHRTP53LMNACYP1A2
SCHEMBL8954023 0.74 CYP1A2 (0.50) TSHRTP53LMNACYP1A2CYP3A4
SCHEMBL2769933 0.73 LTA4H (0.47) TSHRTP53CYP1A2CYP3A4CYP2C9
SCHEMBL8953958 0.73 TSHR (0.49) CNR1CNR2TSHRTP53LMNA
SCHEMBL705223 0.72 NR5A1 (0.44) TSHRTP53LMNACYP3A4LTA4H
SCHEMBL3482301 0.71 ALDH1A1 (0.39) ESR1TSHRLMNACYP1A2CYP2C19
SCHEMBL3481586 0.71 NR1I2 (0.42) TSHRTP53LTA4HNR5A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed