SCHEMBL3482682

SCHEMBL3482682

CCO[SiH2]c1c(C)cccc1C.c1cc2ccc1-2

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 2/20 0.32
CYP2A6 P11509 1/20 0.32
SCN4A P35499 2/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2D6 P10635 1/20 0.32
NFKB1 P19838 1/20 0.32
THPO P40225 1/20 0.32
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31
CA7 P43166 2/20 0.31
CA9 Q16790 2/20 0.31
ALDH1A1 P00352 1/20 0.31
NLRP3 Q96P20 1/20 0.31
TSHR P16473 1/20 0.31
ACHE P22303 1/20 0.31
CA12 O43570 1/20 0.31
CA14 Q9ULX7 1/20 0.31
RXRA P19793 1/20 0.30
RXRB P28702 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481767 0.84 MAPK1 (0.32) CYP1A2CYP2A6SCN4ACYP3A4CYP2D6
SCHEMBL3841318 0.73 TRPA1 (0.35) CYP1A2CYP2A6CYP3A4CYP2D6CA1
SCHEMBL27297188 0.72 TSHR (0.38) CYP3A4CA1CA2CA7CA9
SCHEMBL3482274 0.71 NLRP3 (0.33) NLRP3
SCHEMBL3482388 0.67 L3MBTL1 (0.37) NLRP3
SCHEMBL19879408 0.65 ACHE (0.42) CYP1A2CYP3A4CYP2D6ALDH1A1ACHE
SCHEMBL703521 0.64 LTA4H (0.37) ALDH1A1TSHR
Biphenyl SCHEMBL34936 0.64 ALDH1A1 (0.45) CYP1A2ALDH1A1
SCHEMBL3481787 0.62 ACHE (0.38) CYP3A4CA1CA2CA7CA9
Biphenyl SCHEMBL8087057 0.62 ALDH1A1 (0.43) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed