Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.44 |
| ▸ | CA2 | P00918 | 2/20 | 0.44 |
| ▸ | CA7 | P43166 | 2/20 | 0.44 |
| ▸ | CA9 | Q16790 | 2/20 | 0.44 |
| ▸ | CA12 | O43570 | 1/20 | 0.44 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.44 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.39 |
| ▸ | ACHE | P22303 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | IDO1 | P14902 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 3/20 | 0.37 |
| ▸ | TAS1R3 | Q7RTX0 | 1/20 | 0.37 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.37 |
| ▸ | GAA | P10253 | 2/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL430190 | 0.87 | ALDH1A1 (0.31) | ALDH1A1MEN1KMT2ALMNALTA4H | |
| SCHEMBL2452802 | 0.83 | CA1 (0.48) | CA1CA2CA7CA9CA12 | |
| SCHEMBL18258812 | 0.82 | NQO1 (0.54) | CA1CA2CA7CA9CA12 | |
| SCHEMBL3481583 | 0.82 | CA1 (0.42) | CA1CA2CA7CA9CA12 | |
| SCHEMBL106488 | 0.79 | ACHE (0.35) | ACHEALDH1A1IDO1MEN1KMT2A | |
| SCHEMBL977974 | 0.79 | CYP2D6 (0.39) | CA1CA2CA7CA9CA12 | |
| SCHEMBL15737669 | 0.78 | CYP1A2 (0.34) | ACHEALDH1A1IDO1TDP1LMNA | |
| SCHEMBL3482026 | 0.78 | TP53 (0.36) | CA2ALDH1A1IDO1TDP1MAPK1 | |
| SCHEMBL7124322 | 0.78 | MAPT (0.39) | CA1CA2CA9CA12ACHE | |
| SCHEMBL17529776 | 0.78 | SMN1; SMN2 (0.34) | ALDH1A1IDO1MEN1KMT2ATDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628744-B1 | Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process | SHINETSU CHEMICAL CO (JP) | 2016-11-30 | — | — | EP | claimed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| EP-4592752-A2 | COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-20130210229-A1 | SILICON-CONTAINING SURFACE MODIFIER, RESIST LOWER LAYER FILM-FORMING COMPOSITION CONTAINING THE SAME, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20130045601-A1 | COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| EP-2560049-A2 | Composition for forming a silicon-containing resist underlayer film and patterning processing using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-02-20 | — | — | EP | disclosed |
| US-20130005150-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-03 | — | — | US | disclosed |
| EP-2540780-A1 | Composition for forming resist underlayer film and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-01-02 | — | — | EP | disclosed |
| US-20120276483-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| EP-2518562-A2 | A patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20130210229-A1 | SILICON-CONTAINING SURFACE MODIFIER, RESIST LOWER LAYER FILM-FORMING COMPOSITION CONTAINING THE SAME, AND PATTERNING PROCESS | SIGLEC9, SIGLEC7, EPCAM | CA1 721/4885CA2 2733/4885CA7 899/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA1 667/4885CA2 1064/4885CA7 670/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA1 964/4885CA2 2105/4885CA7 2262/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CA1 322/4885CA2 972/4885CA7 272/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.