Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 8/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.52 |
| ▸ | HPGD | P15428 | 2/20 | 0.52 |
| ▸ | GAA | P10253 | 2/20 | 0.52 |
| ▸ | STAT3 | P40763 | 1/20 | 0.52 |
| ▸ | GLA | P06280 | 2/20 | 0.45 |
| ▸ | MAPT | P10636 | 1/20 | 0.45 |
| ▸ | ACHE | P22303 | 1/20 | 0.45 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | IKBKB | O14920 | 1/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.37 |
| ▸ | CA1 | P00915 | 1/20 | 0.37 |
| ▸ | CA2 | P00918 | 1/20 | 0.37 |
| ▸ | CA9 | Q16790 | 1/20 | 0.37 |
| ▸ | MPL | P40238 | 1/20 | 0.37 |
| ▸ | PRNP | P04156 | 1/20 | 0.37 |
| ▸ | RXFP1 | Q9HBX9 | 1/20 | 0.37 |
| ▸ | MGAM | O43451 | 2/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29424116 | 1.00 | KDM4E (0.52) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL17960034 | 0.85 | ALDH1A1 (0.52) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL6734016 | 0.84 | ALDH1A1 (0.50) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL9618515 | 0.82 | ALDH1A1 (0.49) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL2697944 | 0.82 | ALDH1A1 (0.49) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL9618516 | 0.82 | ALDH1A1 (0.49) | KDM4EALDH1A1HPGDGAASTAT3 | |
| Zinc Ion SCHEMBL8780468 | 0.82 | ALDH1A1 (0.49) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL5439062 | 0.81 | ALDH1A1 (0.46) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL29456740 | 0.80 | ALDH1A1 (0.43) | KDM4EALDH1A1HPGDGAASTAT3 | |
| SCHEMBL27825821 | 0.78 | L3MBTL1 (0.48) | KDM4EALDH1A1HPGDGAAMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12331239-B2 | Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt | BASF SE (DE) | 2025-06-17 | — | — | US | claimed |
| US-20240093089-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | BASF SE (DE) | 2024-03-21 | — | — | US | claimed |
| US-20200339523-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | BASF SE (DE) | 2020-10-29 | — | — | US | claimed |
| EP-3720989-A2 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | BASF SE (DE) | 2020-10-14 | — | — | EP | claimed |
| CN-111465716-A | Compositions and methods for selectively etching a layer comprising an aluminum compound in the presence of a layer of a low-K material, copper, and/or cobalt | 巴斯夫欧洲公司 | 2020-07-28 | — | — | CN | claimed |
| WO-2019110680-A2 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | BASF SE (DE) | 2019-06-13 | — | — | WO | claimed |
| US-20100163788-A1 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2010-07-01 | — | — | US | claimed |
| EP-2108039-A2 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES | Advanced Technology Materials, Inc. (US) | 2009-10-14 | — | — | EP | claimed |
| WO-2008080097-A2 | LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-07-03 | — | — | WO | claimed |
| US-4595519-A | Nonionic surfactant, carboxylic acid or salt, heterocyclic ring compound containing sulfur or nitrogen | KAO CORPORATION (JP) | 1986-06-17 | — | — | US | claimed |
| US-20260109898-A1 | USE OF A COMPOSITION AND A PROCESS FOR SELECTIVELY ETCHING SILICON | BASF SE (DE) | 2026-04-23 | — | — | US | disclosed |
| US-12590274-B2 | Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten | BASF SE (DE) | 2026-03-31 | — | — | US | disclosed |
| US-12525464-B2 | Use of a composition and a process for selectively etching silicon | BASF SE (DE) | 2026-01-13 | — | — | US | disclosed |
| EP-4634964-A1 | SOLUTION FOR POST ETCH RESIDUE REMOVAL (PERR) | BASF SE (DE) | 2025-10-22 | — | — | EP | disclosed |
| EP-4634965-A1 | SOLUTION FOR POST ETCH RESIDUE REMOVAL (PERR) | BASF SE (DE) | 2025-10-22 | — | — | EP | disclosed |
| WO-1990010095-A1 | POLYMERIC COATING COMPOSITIONS FOR CORROSION PROTECTION | ITC UNIADVICE LIMITED (AU) | 1990-09-07 | — | — | WO | disclosed |
| US-4617382-A | PRINTING; DYEING; SILK, LEATHER, WOOL AND POLYAMIDES | CIBA-GEIGY CORPORATION (US) | 1986-10-14 | — | — | US | disclosed |
| US-4595519-A | Nonionic surfactant, carboxylic acid or salt, heterocyclic ring compound containing sulfur or nitrogen | KAO CORPORATION (JP) | 1986-06-17 | — | — | US | disclosed |
| EP-0132765-A1 | Metal cleaning compositions | Kao Corporation (JP) | 1985-02-13 | — | — | EP | disclosed |
| US-4228071-A | Triazine containing fiber-reactive disazo dyestuffs | CIBA-GEIGY CORPORATION (US) | 1980-10-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240093089-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | STK11, CRKL, STK10 | KDM4E 425/4885ALDH1A1 3964/4885HPGD 4752/4885 |
| US-20200339523-A1 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT | STK11, ASH2L, CRKL | KDM4E 433/4885ALDH1A1 4123/4885HPGD 4750/4885 |
| US-20260109898-A1 | USE OF A COMPOSITION AND A PROCESS FOR SELECTIVELY ETCHING SILICON | PIEZO1, ASIC1, CHRM1 | KDM4E 726/4885ALDH1A1 1976/4885HPGD 4857/4885 |
| US-12590274-B2 | Composition and process for selectively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten | AP2S1, TYK2, PTPN4 | KDM4E 291/4885ALDH1A1 1545/4885HPGD 4269/4885 |
| US-12331239-B2 | Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt | STK11, CRKL, STK10 | KDM4E 425/4885ALDH1A1 3964/4885HPGD 4752/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.