Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAPGEF4 | Q8WZA2 | 1/20 | 0.44 |
| ▸ | MEP1B | Q16820 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.41 |
| ▸ | HPGD | P15428 | 2/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.41 |
| ▸ | GFER | P55789 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 4/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.39 |
| ▸ | GAA | P10253 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | MAP1LC3B | Q9GZQ8 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.38 |
| ▸ | F2 | P00734 | 1/20 | 0.38 |
| ▸ | PKM | P14618 | 1/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29362738 | 1.00 | RAPGEF4 (0.44) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL30457792 | 0.92 | RAPGEF4 (0.40) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL10179468 | 0.92 | RAPGEF4 (0.40) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL15101771 | 0.92 | RAPGEF4 (0.43) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL3165992 | 0.92 | RAPGEF4 (0.40) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL30458256 | 0.91 | RAPGEF4 (0.39) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL3166189 | 0.91 | RAPGEF4 (0.39) | RAPGEF4MEP1BALDH1A1HPGDMAPT | |
| SCHEMBL6934542 | 0.86 | ALDH1A1 (0.44) | ALDH1A1HPGDMAPTKMT2ALMNA | |
| SCHEMBL2460253 | 0.84 | RAPGEF3 (0.48) | RAPGEF4ALDH1A1MAPTPOLBKMT2A | |
| SCHEMBL7693707 | 0.83 | LMNA (0.42) | RAPGEF4MEP1BALDH1A1MAPTKMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2953 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-115368494-B | Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof | 瑞红(苏州)电子化学品股份有限公司 | 2024-03-29 | — | — | CN | claimed |
| CN-116102680-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-02-13 | — | — | CN | claimed |
| CN-114252537-B | Identification method of diazomethane photoacid generator in photoresist | 北京彤程创展科技有限公司 | 2023-11-21 | — | — | CN | claimed |
| CN-116102938-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102937-B | Bottom anti-reflection coating and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116102939-B | Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-10-03 | — | — | CN | claimed |
| CN-115873176-B | Bottom anti-reflection coating for DUV lithography and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| US-6063542-A | Polymer for positive photoresist and chemical amplification positive photoresist composition comprising the same | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2000-05-16 | — | — | US | claimed |
| US-5962185-A | Polymer for positive photoresist and chemical amplified positive photoresist composition containing the same | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 1999-10-05 | — | — | US | claimed |
| US-5962186-A | Polymer for chemical amplified positive photoresist composition containing the same | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 1999-10-05 | — | — | US | claimed |
| US-5882835-A | Positive photoresist resin and chemical amplified positive photoresist composition containing the same | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 1999-03-16 | — | — | US | claimed |
| US-5874195-A | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-02-23 | — | — | US | claimed |
| US-5856058-A | HALATION INHIBITOR WHICH IS AN ESTERIFICATION PRODUCT BETWEEN A SPECIFIED PHENOLIC COMPOUND AND A NAPHTHOQUINONE-1,2-DIAZIDE SULFONIC ACID. | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-01-05 | — | — | US | claimed |
| US-5770343-A | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1998-06-23 | — | — | US | claimed |
| EP-0679951-B1 | Positive resist composition | TOKYO OHKA KOGYO CO LTD (JP) | 1997-01-15 | — | — | EP | claimed |
| EP-0749044-A2 | Positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1996-12-18 | — | — | EP | claimed |
| EP-0679951-A1 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1995-11-02 | — | — | EP | claimed |