SCHEMBL382735

SCHEMBL382735

O=C(OC(C(F)(F)F)C(F)(F)S(=O)(=O)O)c1cccc2ccccc12

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.43
POLB P06746 1/20 0.43
GAA P10253 1/20 0.43
NR4A1 P22736 1/20 0.41
NR4A2 P43354 1/20 0.41
NR4A3 Q92570 1/20 0.41
ADRB2 P07550 2/20 0.40
ADRB1 P08588 2/20 0.40
ADRB3 P13945 2/20 0.40
UTS2R Q9UKP6 1/20 0.40
MMP3 P08254 1/20 0.39
HDAC8 Q9BY41 1/20 0.39
CDC25B P30305 2/20 0.38
MEN1 O00255 2/20 0.38
MAPT P10636 1/20 0.38
PTPN1 P18031 1/20 0.38
PLK1 P53350 1/20 0.38
KDM4E B2RXH2 4/20 0.38
HPGD P15428 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19042446 0.90 KMT2A (0.44) KMT2APOLBGAANR4A1NR4A2
SCHEMBL11991255 0.86 ADRB2 (0.43) KMT2APOLBGAANR4A1NR4A2
SCHEMBL14295848 0.83 ADRB2 (0.47) KMT2APOLBGAANR4A1NR4A2
SCHEMBL25985165 0.83 ALDH1A1 (0.40) KMT2APOLBHDAC8MEN1MAPT
SCHEMBL12119759 0.83 ERN1 (0.34) KMT2AGAAMEN1MAPTKDM4E
SCHEMBL18785994 0.82 CES2 (0.41) KMT2APOLBGAAADRB2ADRB1
SCHEMBL6449936 0.82 ALDH1A1 (0.41) KMT2AGAAHDAC8MEN1MAPT
SCHEMBL12216084 0.81 KDM4E (0.44) KMT2APOLBGAAMMP3HDAC8
SCHEMBL18785807 0.81 TSHR (0.38) KMT2APOLBGAAMEN1MAPT
SCHEMBL11991277 0.81 ALDH1A1 (0.45) KMT2APOLBMAPTKDM4EL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 294 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7638260-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-29 US claimed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-11561472-B2 Radiation sensitive composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-01-24 US disclosed
EP-3309614-B1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL CORP (JP) 2021-11-10 EP disclosed
CN-106610566-B Chemically amplified positive resist composition and patterning method 信越化学工业株式会社 2021-10-08 CN disclosed
CN-109563371-B Polysiloxane composition comprising acetal-protected silanol groups 日产化学株式会社 2021-09-21 CN disclosed
CN-105404096-B Chemically amplified positive resist dry film, dry film laminate and method for producing laminate 信越化学工业株式会社 2021-07-16 CN disclosed
CN-106444288-B Chemically amplified positive resist composition and pattern forming method 信越化学工业株式会社 2021-04-09 CN disclosed
EP-3163374-B1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2020-12-02 EP disclosed
US-20080008961-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008959-A1 Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008962-A1 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST KMT2A 83/4885POLB 1595/4885GAA 3366/4885
US-11561472-B2 Radiation sensitive composition RER1, RAD1, RAD51 KMT2A 853/4885POLB 115/4885GAA 1412/4885
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 KMT2A 1434/4885POLB 1148/4885GAA 3469/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 KMT2A 3292/4885POLB 1007/4885GAA 4626/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.