Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 4/20 | 0.39 |
| ▸ | MEN1 | O00255 | 3/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.36 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.35 |
| ▸ | HPGD | P15428 | 2/20 | 0.35 |
| ▸ | MAPT | P10636 | 2/20 | 0.35 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | PTGER4 | P35408 | 1/20 | 0.33 |
| ▸ | HSD11B1 | P28845 | 2/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | GLA | P06280 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.32 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9010800 | 0.80 | CES2 (0.53) | KMT2AMEN1ALDH1A1HPGDMAPT | |
| SCHEMBL546386 | 0.78 | CES2 (0.45) | KMT2AMEN1CYP1A2ALDH1A1MAPT | |
| SCHEMBL384366 | 0.77 | CES2 (0.51) | KMT2AMEN1ALDH1A1MAPTCES2 | |
| SCHEMBL9010834 | 0.76 | KAT6A (0.49) | KMT2AMEN1ALDH1A1MAPTSMN1; SMN2 | |
| SCHEMBL384240 | 0.76 | ALDH1A1 (0.50) | ALDH1A1CES2CES1NPC1RAB9A | |
| SCHEMBL9010791 | 0.75 | NR4A1 (0.47) | KMT2AMEN1CYP1A2ALDH1A1HPGD | |
| SCHEMBL384364 | 0.74 | CES2 (0.51) | KMT2AMEN1ALDH1A1HPGDMAPT | |
| SCHEMBL9010921 | 0.74 | ALDH1A1 (0.39) | KMT2AMEN1ALDH1A1HPGDMAPT | |
| SCHEMBL382665 | 0.72 | KAT6A (0.48) | ALDH1A1CES2CES1SMN1; SMN2HTT | |
| SCHEMBL29515643 | 0.72 | KAT6A (0.48) | ALDH1A1CES2CES1SMN1; SMN2HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 386 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | disclosed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | disclosed |
| CN-114600045-B | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2025-05-09 | — | — | CN | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| WO-2025058368-A1 | PHOTOSENSITIVE RESIN COMPOSITION, INSULATION FILM, AND SEMICONDUCTOR DEVICE | 주식회사 엘지화학 | 2025-03-20 | — | — | WO | disclosed |
| US-20250044695-A1 | METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2025-02-06 | — | — | US | disclosed |
| US-6338931-B1 | PHOTOACID GENERATOR OF SULFONYLDIAZOMETHANE COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-01-15 | — | — | US | disclosed |
| US-20010038971-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-08 | — | — | US | disclosed |
| US-20010036593-A1 | Chemical amplification type resist composition | SHIN-ETSU CHEMICAL CO., LTD. | 2001-11-01 | — | — | US | disclosed |
| US-20010035394-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-20010033994-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |
| US-20010031421-A1 | Chemical amplification resist compositions | SHIN-ETSU CHEMICAL CO., LTD. OF (JP) | 2001-10-18 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |