SCHEMBL384366

SCHEMBL384366

Cc1ccc(C(=O)C(=[N+]=[N-])S(=O)(=O)c2ccccc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 3/20 0.51
CES1 P23141 3/20 0.51
HSD11B1 P28845 2/20 0.51
LMNA P02545 3/20 0.48
HTT P42858 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
RECQL P46063 1/20 0.44
MAPT P10636 1/20 0.42
USP2 O75604 1/20 0.42
ALDH1A1 P00352 6/20 0.41
TDP1 Q9NUW8 2/20 0.41
TP53 P04637 1/20 0.41
KMT2A Q03164 4/20 0.41
SMN1; SMN2 Q16637 3/20 0.41
MEN1 O00255 2/20 0.41
NOD2 Q9HC29 1/20 0.41
RAB9A P51151 2/20 0.40
NPC1 O15118 1/20 0.40
GAA P10253 1/20 0.40
CYP1B1 Q16678 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL384364 0.94 CES2 (0.51) CES2CES1HSD11B1LMNAHTT
SCHEMBL9010795 0.92 CES2 (0.48) CES2CES1HSD11B1LMNAHTT
SCHEMBL546386 0.89 CES2 (0.45) CES2CES1HSD11B1LMNAHTT
SCHEMBL6932211 0.85 CES2 (0.56) CES2CES1LMNAHTTL3MBTL1
SCHEMBL9010901 0.85 KMT2A (0.51) CES2CES1LMNAHTTL3MBTL1
SCHEMBL9010850 0.85 CA2 (0.49) CES2CES1HSD11B1ALDH1A1KMT2A
SCHEMBL8637821 0.85 KMT2A (0.53) CES2CES1HSD11B1LMNAHTT
SCHEMBL9010834 0.84 KAT6A (0.49) HSD11B1LMNARECQLMAPTALDH1A1
SCHEMBL9010827 0.84 ALDH1A1 (0.57) CES2CES1HSD11B1HTTMAPT
SCHEMBL9015170 0.84 ALDH1A1 (0.55) HSD11B1LMNAHTTL3MBTL1RECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 399 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US disclosed
EP-4050054-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHINETSU CHEMICAL CO (JP) 2025-04-23 EP disclosed
CN-119827495-A Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine 上海微悦芯材新材料有限责任公司 2025-04-15 CN disclosed
US-12197127-B2 Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-14 US disclosed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO disclosed
CN-117501179-A Method of using composition containing organic acid compound, lithographic composition containing organic acid compound, and method of manufacturing resist pattern 默克专利有限公司 2024-02-02 CN disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
EP-0501294-B1 Radiation-sensitive polymers with 2-diazo-1,3-dicarbonyl groups, process for its production and its use in a positive-working recording material HOECHST AG (DE) 1994-10-26 EP disclosed
US-5340682-A Sensitive, heat resistant, noncorrosive HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-23 US disclosed
US-5326826-A Binder HOECHST AKTIENGESELLSCHAFT (DE) 1994-07-05 US disclosed
EP-0501294-A1 Radiation-sensitive polymers with 2-diazo-1,3-dicarbonyl groups, process for its production and its use in a positive-working recording material HOECHST AKTIENGESELLSCHAFT (DE) 1992-09-02 EP disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417556-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed