Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 2/20 | 0.51 |
| ▸ | CES1 | P23141 | 2/20 | 0.51 |
| ▸ | RECQL | P46063 | 1/20 | 0.51 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.48 |
| ▸ | TP53 | P04637 | 1/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.48 |
| ▸ | LMNA | P02545 | 4/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.47 |
| ▸ | NOD2 | Q9HC29 | 1/20 | 0.47 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.44 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.40 |
| ▸ | MEN1 | O00255 | 2/20 | 0.40 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL384366 | 0.94 | CES2 (0.51) | CES2CES1RECQLALDH1A1TP53 | |
| SCHEMBL9010795 | 0.92 | CES2 (0.48) | CES2CES1RECQLALDH1A1LMNA | |
| SCHEMBL546386 | 0.89 | CES2 (0.45) | CES2CES1ALDH1A1TP53LMNA | |
| SCHEMBL9010783 | 0.87 | ALDH1A1 (0.47) | RECQLALDH1A1TP53TDP1LMNA | |
| SCHEMBL9010901 | 0.85 | KMT2A (0.51) | CES2CES1RECQLALDH1A1TDP1 | |
| SCHEMBL6932211 | 0.85 | CES2 (0.56) | CES2CES1ALDH1A1TP53LMNA | |
| SCHEMBL9010834 | 0.84 | KAT6A (0.49) | RECQLALDH1A1LMNASMN1; SMN2HSD11B1 | |
| SCHEMBL6932205 | 0.84 | MAPT (0.50) | RECQLALDH1A1TDP1LMNASMN1; SMN2 | |
| SCHEMBL384240 | 0.84 | ALDH1A1 (0.50) | CES2CES1RECQLALDH1A1TP53 | |
| SCHEMBL9010806 | 0.84 | KMT2A (0.43) | RECQLALDH1A1TP53TDP1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 460 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| CN-119827495-A | Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| CN-119827496-A | Method for testing acid strength and acid production efficiency by using photoetching machine and application | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| US-12197127-B2 | Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-01-14 | — | — | US | disclosed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-0417556-B1 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AG (DE) | 1996-12-11 | — | — | EP | disclosed |
| EP-0444493-B1 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AG (DE) | 1996-11-20 | — | — | EP | disclosed |
| US-5424166-A | Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1995-06-13 | — | — | US | disclosed |
| US-5340682-A | Sensitive, heat resistant, noncorrosive | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-23 | — | — | US | disclosed |
| EP-0444493-A2 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-09-04 | — | — | EP | disclosed |
| EP-0417556-A2 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-03-20 | — | — | EP | disclosed |