Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 12/20 | 0.46 |
| ▸ | CES1 | P23141 | 11/20 | 0.46 |
| ▸ | RAB9A | P51151 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | XBP1 | P17861 | 1/20 | 0.39 |
| ▸ | ATM | Q13315 | 1/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.39 |
| ▸ | DAO | P14920 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.37 |
| ▸ | NAPRT | Q6XQN6 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29015897 | 0.84 | CES2 (0.52) | CES2CES1RAB9ALMNAATM | |
| SCHEMBL6931693 | 0.82 | CES2 (0.47) | CES2CES1LMNAMAPTNPSR1 | |
| SCHEMBL6927935 | 0.82 | CES2 (0.50) | CES2CES1RAB9ALMNAMAPT | |
| SCHEMBL546386 | 0.80 | CES2 (0.45) | CES2CES1RAB9ALMNAMAPT | |
| SCHEMBL384364 | 0.77 | CES2 (0.51) | CES2CES1RAB9ALMNAMAPT | |
| SCHEMBL7080179 | 0.76 | RAB9A (0.38) | CES2CES1RAB9ASMN1; SMN2ALDH1A1 | |
| SCHEMBL7695453 | 0.75 | MMP2 (0.40) | CES2CES1RAB9ASMN1; SMN2ALDH1A1 | |
| SCHEMBL31511320 | 0.74 | CES2 (0.41) | CES2CES1SMN1; SMN2ALDH1A1RECQL | |
| SCHEMBL384366 | 0.74 | CES2 (0.51) | CES2CES1RAB9ALMNAMAPT | |
| Benzil SCHEMBL4750330 | 0.73 | CES2 (0.70) | CES2CES1RAB9ALMNAMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 427 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| CN-101034260-B | Photosensitive resin composition | DONGJIN SEMICOHEM CO LTD | 2012-07-18 | — | — | CN | claimed |
| CN-101034260-A | Photosensitive resin composition | DONGJIN SEMICHEM CO LTD (KR) | 2007-09-12 | — | — | CN | claimed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | disclosed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | disclosed |
| EP-4050054-B1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHINETSU CHEMICAL CO (JP) | 2025-04-23 | — | — | EP | disclosed |
| CN-119827495-A | Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| WO-2025058368-A1 | PHOTOSENSITIVE RESIN COMPOSITION, INSULATION FILM, AND SEMICONDUCTOR DEVICE | 주식회사 엘지화학 | 2025-03-20 | — | — | WO | disclosed |
| US-12197127-B2 | Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-01-14 | — | — | US | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| EP-0417556-B1 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AG (DE) | 1996-12-11 | — | — | EP | disclosed |
| EP-0444493-B1 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AG (DE) | 1996-11-20 | — | — | EP | disclosed |
| US-5424166-A | Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1995-06-13 | — | — | US | disclosed |
| US-5340682-A | Sensitive, heat resistant, noncorrosive | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-23 | — | — | US | disclosed |
| EP-0444493-A2 | Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-09-04 | — | — | EP | disclosed |
| EP-0417556-A2 | Positive-working radiation-sensitive mixture and recording material prepared therefrom | HOECHST AKTIENGESELLSCHAFT (DE) | 1991-03-20 | — | — | EP | disclosed |