SCHEMBL6927935

SCHEMBL6927935

CS(=O)(=O)C(=[N+]=[N-])C(=O)c1ccc(Br)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.50
CES1 P23141 1/20 0.50
HTT P42858 1/20 0.40
GSK3B P49841 2/20 0.39
ALDH1A1 P00352 1/20 0.39
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
KMT2A Q03164 3/20 0.38
AKR1C3 P42330 1/20 0.37
HSD11B1 P28845 1/20 0.36
LMNA P02545 4/20 0.36
RAB9A P51151 2/20 0.36
MEN1 O00255 1/20 0.36
MAPT P10636 1/20 0.36
MAPK1 P28482 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
RXFP1 Q9HBX9 1/20 0.36
OGG1 O15527 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
HDAC3 O15379 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29015897 0.84 CES2 (0.52) CES2CES1HTTGSK3BALDH1A1
SCHEMBL6931310 0.83 CES2 (0.47) CES2CES1HTTGSK3BCA1
SCHEMBL384658 0.82 CES2 (0.46) CES2CES1ALDH1A1KMT2ALMNA
SCHEMBL9010901 0.79 KMT2A (0.51) CES2CES1HTTALDH1A1CA1
SCHEMBL9010850 0.78 CA2 (0.49) CES2CES1ALDH1A1CA1CA2
SCHEMBL557285 0.70 CES2 (1.00) CES2CES1HTTGSK3BCA1
SCHEMBL9010795 0.68 CES2 (0.48) CES2CES1HTTALDH1A1KMT2A
SCHEMBL767141 0.66 CES2 (0.71) CES2CES1HTTGSK3BALDH1A1
SCHEMBL6931693 0.66 CES2 (0.47) CES2CES1ALDH1A1HSD11B1LMNA
SCHEMBL5388314 0.65 CES2 (0.76) CES2CES1HTTGSK3BALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6589705-B1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2003-07-08 US disclosed
US-6555289-B2 Positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an akali developer increases under action of an acid FUJI PHOTO FILM CO., LTD. (JP) 2003-04-29 US disclosed
US-6528229-B2 Mixture of polymer and acid generators FUJI PHOTO FILM CO., LTD. (JP) 2003-03-04 US disclosed
US-6506535-B1 A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels FUJI PHOTO FILM CO., LTD. (JP) 2003-01-14 US disclosed
US-20020048720-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-04-25 US disclosed
US-20010041303-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
EP-1096319-A1 Positive-working photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-05-02 EP disclosed
EP-0417556-B1 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AG (DE) 1996-12-11 EP disclosed
EP-0444493-B1 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AG (DE) 1996-11-20 EP disclosed
US-5424166-A Negative-working radiation-sensitive mixture containing diazomethane acid generator and a radiation-sensitive recording material produced therfrom HOECHST AKTIENGESELLSCHAFT (DE) 1995-06-13 US disclosed
US-5340682-A Sensitive, heat resistant, noncorrosive HOECHST AKTIENGESELLSCHAFT (DE) 1994-08-23 US disclosed
EP-0444493-A2 Negative working radiation sensitive composition and radiation sensitive recording material produced therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-04 EP disclosed
EP-0417556-A2 Positive-working radiation-sensitive mixture and recording material prepared therefrom HOECHST AKTIENGESELLSCHAFT (DE) 1991-03-20 EP disclosed