SCHEMBL3955265

SCHEMBL3955265

C=C(c1ccccc1C(=C)[Si](C)(C)OC)[Si](C)(C)OC

nearest known ligand 0.33

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.33
LMNA P02545 1/20 0.33
HSD17B10 Q99714 2/20 0.32
ALDH1A1 P00352 1/20 0.32
CFTR P13569 1/20 0.32
KDM4E B2RXH2 2/20 0.31
POLB P06746 1/20 0.31
ATM Q13315 1/20 0.31
GLA P06280 1/20 0.31
CYP1A2 P05177 1/20 0.30
CYP2C19 P33261 1/20 0.30
ALOX5 P09917 1/20 0.30
TLR4 O00206 1/20 0.30
XDH P47989 1/20 0.30
NLRP3 Q96P20 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3948528 0.79 TSHR (0.34) TSHRLMNAHSD17B10ALDH1A1CFTR
SCHEMBL3955962 0.76 MAPT (0.33)
SCHEMBL3951762 0.74 CES2 (0.34) TSHRATM
SCHEMBL3950490 0.71 MAOA (0.34) ALDH1A1
SCHEMBL29434610 0.67 ADRA2A (0.33)
SCHEMBL6512616 0.67 ADRA2A (0.33)
SCHEMBL6516401 0.67 ADRA2A (0.33)
SCHEMBL7175530 0.67 ALDH1A1 (0.48) TSHRHSD17B10ALDH1A1CFTRKDM4E
SCHEMBL23493400 0.67 TSHR (0.32) TSHRLMNAHSD17B10ALDH1A1CFTR
SCHEMBL29434630 0.67 TSHR (0.32) TSHRLMNAHSD17B10ALDH1A1CFTR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed