SCHEMBL423709

SCHEMBL423709

CCC[Si](Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.41
CA4 P22748 1/20 0.39
TSHR P16473 1/20 0.36
KCNA3 P22001 1/20 0.36
CHRNB2 P17787 2/20 0.35
CHRNB4 P30926 2/20 0.35
CHRNA3 P32297 2/20 0.35
CHRNA7 P36544 2/20 0.35
CHRNA4 P43681 2/20 0.35
CA5A P35218 1/20 0.34
CA5B Q9Y2D0 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
MAPT P10636 1/20 0.34
ALOX12 P18054 1/20 0.34
RECQL P46063 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19816390 0.90 CA4 (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL1609512 0.90 CA4 (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL11118402 0.88 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816463 0.88 LTA4H (0.38) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL428858 0.87 LTA4H (0.47) LTA4HCA4TSHRKCNA3MAPT
SCHEMBL329176 0.85 LTA4H (0.43) LTA4HCA4TSHRKCNA3CA5A
SCHEMBL2400834 0.85 LTA4H (0.47) LTA4HKCNA3MAPT
SCHEMBL31187730 0.84 LTA4H (0.46) LTA4HTSHR
SCHEMBL958899 0.84 LTA4H (0.46) LTA4HTSHR
SCHEMBL4810179 0.84 LTA4H (0.46) LTA4HTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 525 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230046062-A1 ANTIMICROBIAL COMPOSITIONS AND METHODS OF USING THEREOF ZEOVATION, INC. 2023-02-16 US claimed
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
WO-2021113377-A1 ANTIMICROBIAL COMPOSITIONS AND METHODS OF USING THEREOF OHIO STATE INNOVATION FOUNDATION (US) 2021-06-10 WO claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US claimed
US-8378008-B2 Surface-modified non-halogenated mineral fillers MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2013-02-19 US claimed
US-20110009545-A1 SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-01-13 US claimed
US-7709551-B2 Coating composition for film with low refractive index and film prepared therefrom LG CHEM, LTD. (KR) 2010-05-04 US claimed
WO-2006129973-A9 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG CHEM, LTD. (KR) 2010-01-21 WO claimed
US-20080090926-A1 Coating Composition for Film with Low Refractive Index and Film Prepared Therefrom LG CHEM, LTD. (KR) 2008-04-17 US claimed
EP-1784465-A1 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG Chem, Ltd. (KR) 2007-05-16 EP claimed
WO-2006129973-A1 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG CHEM, LTD. (KR) 2006-12-07 WO claimed
US-7129311-B2 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. (US) 2006-10-31 US claimed
US-20060159861-A1 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. (US) 2006-07-20 US claimed
EP-1573086-A2 ADDITIVES TO PREVENT DEGRADATION OF ALKYL-HYDROGEN SILOXANES Arch Specialty Chemicals, Inc. (US) 2005-09-14 EP claimed
US-20040127070-A1 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. 2004-07-01 US claimed
WO-2004027110-A2 ADDITIVES TO PREVENT DEGRADATION OF ALKYL-HYDROGEN SILOXANES ARCH SPECIALTY CHEMICALS, INC. (US) 2004-04-01 WO claimed
EP-3864059-B1 MODIFIED DIENE COPOLYMERS WITH TARGETED AND STABILIZED VISCOSITY FIRESTONE POLYMERS LLC (US) 2026-01-14 EP disclosed
US-20250179221-A1 HIGHLY FUNCTIONALIZED STABLE HYDROCARBYLOXYSILYL POLYDIENES AND POLYDIENE COPOLYMERS BRIDGESTONE AMERICAS TIRE OPERATIONS, LLC 2025-06-05 US disclosed
US-20250092168-A1 HIGHLY FUNCTIONALIZED STABLE DIHYDROCARBYLOXYSILYL POLYDIENES AND POLYDIENE COPOLYMERS BRIDGESTONE AMERICAS TIRE OPERATIONS, LLC 2025-03-20 US disclosed
CN-118974885-A Method for forming cured film, method for manufacturing substrate for imprint mold, method for manufacturing concave-convex structure, method for forming pattern, method for forming hard mask, method for forming insulating film, and method for manufacturing semiconductor device 大日本印刷株式会社 2024-11-15 CN disclosed
EP-4460537-A1 HIGHLY FUNCTIONALIZED STABLE DIHYDROCARBYLOXYSILYL POLYDIENES AND POLYDIENE COPOLYMERS Bridgestone Americas Tire Operations, LLC (US) 2024-11-13 EP disclosed
CN-118900883-A Highly functionalized stable hydrocarbyloxysilyl polydienes and polydiene copolymers 普利司通美国轮胎运营有限责任公司 2024-11-05 CN disclosed
CN-118818897-A Radiation-sensitive composition, cured film, method for producing same, semiconductor element, and display element JSR株式会社 2024-10-22 CN disclosed
CN-113614132-B Photo-curable resin composition for imprinting, method for producing photo-curable resin composition for imprinting, and method for producing pattern-formed body 大日本印刷株式会社 2024-09-20 CN disclosed
WO-2024190380-A1 SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT MANUFACTURING METHOD, PATTERN FORMATION METHOD, AND SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT 東京応化工業株式会社 2024-09-19 WO disclosed
US-20240262964-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2024-08-08 US disclosed
EP-4398035-A1 WAFER EDGE PROTECTIVE-FILM-FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING Nissan Chemical Corporation (JP) 2024-07-10 EP disclosed
EP-4361201-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2024-05-01 EP disclosed
CN-117836138-A Substrate with adhesive layer, laminate, and coating composition 旭化成株式会社 2024-04-05 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
CN-117413005-A Process for producing siloxane polymer 东丽精细化工株式会社 2024-01-16 CN disclosed
US-20230381069-A1 TOPICAL COMPOSITIONS AND METHODS OF USING THEREOF OHIO STATE INNOVATION FOUNDATION 2023-11-30 US disclosed
CN-116854903-A Alkoxy silanization PEG cross-linking agent, physical/chemical double-crosslinked hydrogel and application thereof 复旦大学 2023-10-10 CN disclosed
WO-2023158819-A1 HIGHLY FUNCTIONALIZED STABLE HYDROCARBYLOXYSILYL POLYDIENES AND POLYDIENE COPOLYMERS BRIDGESTONE AMERICAS TIRE OPERATIONS, LLC (US) 2023-08-24 WO disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
WO-2023133557-A1 HIGHLY FUNCTIONALIZED STABLE DIHYDROCARBYLOXYSILYL POLYDIENES AND POLYDIENE COPOLYMERS BRIDGESTONE AMERICAS TIRE OPERATIONS, LLC (US) 2023-07-13 WO disclosed
CN-115244109-B Process for producing siloxane polymer 东丽精细化工株式会社 2023-07-07 CN disclosed
CN-116323720-A Curable resin composition for silicon-containing resist, pattern forming method, method for producing imprint mold, and method for producing semiconductor device 大日本印刷株式会社 2023-06-23 CN disclosed
US-20230167244-A1 METHOD OF PRODUCING SILICONE POLYMER TORAY FINE CHEMICALS CO., LTD. (JP) 2023-06-01 US disclosed
US-20230046062-A1 ANTIMICROBIAL COMPOSITIONS AND METHODS OF USING THEREOF ZEOVATION, INC. 2023-02-16 US disclosed
EP-4119596-A1 METHOD FOR PRODUCING SILICONE POLYMER Toray Fine Chemicals Co., Ltd. (JP) 2023-01-18 EP disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
WO-2022270336-A1 METHOD FOR PRODUCING SILICONE POLYMER 東レ・ファインケミカル株式会社 2022-12-29 WO disclosed
US-20220380604-A1 SURFACE MODIFIED KAOLIN PIGMENT AND METHOD THEREOF BASF CORPORATION 2022-12-01 US disclosed
CN-112566991-B Hard coat film, substrate with hard coat film, coating composition, and window material 旭化成株式会社 2022-09-09 CN disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-20220220338-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-14 US disclosed
US-20220213348-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-07 US disclosed
US-11377522-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica-based coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2022-07-05 US disclosed
EP-3994204-A1 SURFACE MODIFIED KAOLIN PIGMENT AND METHOD THEREOF BASF Corporation (US) 2022-05-11 EP disclosed
CN-108389512-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-04-15 CN disclosed
WO-2022075361-A1 CURABLE RESIN COMPOSITION FOR SILICON-CONTAINING RESIST, METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING IMPRINT MOLD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 大日本印刷株式会社 2022-04-14 WO disclosed
EP-3971229-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2022-03-23 EP disclosed
WO-2022054912-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE 三菱ケミカル株式会社 2022-03-17 WO disclosed
EP-3957678-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER Tokyo Ohka Kogyo Co., Ltd. (JP) 2022-02-23 EP disclosed
CN-114026180-A Surface modified kaolin pigments and methods therefor 巴斯夫公司 2022-02-08 CN disclosed
CN-108250754-B Silicon-containing resin composition, silicon-containing resin film, silica film, light-emitting display element panel, and light-emitting display device 东京应化工业株式会社 2022-01-25 CN disclosed
CN-108387954-B Laminate, flexible device, and method for producing laminate 东京应化工业株式会社 2022-01-18 CN disclosed
US-20210395462-A1 FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2021-12-23 US disclosed
CN-108699392-B High-durability antifogging coating film and coating composition 旭化成株式会社 2021-11-23 CN disclosed
US-20210340286-A1 Modified Diene Copolymers With Targeted And Stabilized Viscosity FIRESTONE POLYMERS, LLC (US) 2021-11-04 US disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-20210309866-A1 LIQUID COMPOSITION, QUANTUM DOT-CONTAINING FILM, OPTICAL FILM, LIGHT-EMITTING DISPLAY ELEMENT PANEL, AND LIGHT-EMITTING DISPLAY DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-07 US disclosed
CN-107709464-B Silicon-containing resin composition 东京应化工业株式会社 2021-09-28 CN disclosed
EP-3864059-A1 MODIFIED DIENE COPOLYMERS WITH TARGETED AND STABILIZED VISCOSITY Firestone Polymers, LLC (US) 2021-08-18 EP disclosed
CN-109641835-B Method for producing carbamate 国立研究开发法人产业技术综合研究所 2021-07-20 CN disclosed
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US disclosed
WO-2021113377-A1 ANTIMICROBIAL COMPOSITIONS AND METHODS OF USING THEREOF OHIO STATE INNOVATION FOUNDATION (US) 2021-06-10 WO disclosed
EP-3508473-B1 METHOD FOR PRODUCING CARBAMIC ACID ESTER AIST (JP) 2021-05-26 EP disclosed
EP-3812805-A1 LIQUID COMPOSITION, QUANTUM DOT-CONTAINING FILM, OPTICAL FILM, LUMINESCENT DISPLAY ELEMENT PANEL, AND LUMINESCENT DISPLAY DEVICE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-04-28 EP disclosed
CN-112566991-A Hard coat film, substrate with hard coat film, coating composition, and window material 旭化成株式会社 2021-03-26 CN disclosed
EP-3491030-B1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORP (JP) 2021-03-24 EP disclosed
US-10954340-B2 Polyimide precursor composition TOKYO OHKA KOGYO CO., LTD. (JP) 2021-03-23 US disclosed
CN-112334795-A Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device 东京应化工业株式会社 2021-02-05 CN disclosed
WO-2021003182-A1 SURFACE MODIFIED KAOLIN PIGMENT AND METHOD THEREOF BASF CORPORATION (US) 2021-01-07 WO disclosed
WO-2020235325-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR SUPPORTING METAL COMPOUND ON SURFACE OF OBJECT TO BE TREATED, ARTICLE HAVING METAL COMPOUND-SUPPORTING COATING FILM, AND METHOD FOR PRODUCING SILICON-CONTAINING POLYMER 東京応化工業株式会社 (JP) 2020-11-26 WO disclosed
WO-2020230828-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER 東京応化工業株式会社 2020-11-19 WO disclosed
US-20200362115-A1 SILICON-CONTAINING POLYMER, FILM-FORMING COMPOSITION, METHOD FOR FORMING SILICON-CONTAINING POLYMER COATING, METHOD FOR FORMING SILICA-BASED COATING, AND PRODUCTION METHOD FOR SILICON-CONTAINING POLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2020-11-19 US disclosed
CN-107429059-B Energy-sensitive resin composition 东京应化工业株式会社 2020-10-23 CN disclosed
CN-111684030-A High-durability antifogging coating film and coating composition 旭化成株式会社 2020-09-18 CN disclosed
CN-107922733-B Polyimide precursor composition 东京应化工业株式会社 2020-09-11 CN disclosed
EP-3705534-A1 SILICON-CONTAINING RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2020-09-09 EP disclosed
US-20200270456-A1 SILICON-CONTAINING RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2020-08-27 US disclosed
US-10752579-B2 Production method of carbamic acid ester NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2020-08-25 US disclosed
US-10696845-B2 Energy-sensitive resin composition TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-30 US disclosed
US-10689514-B2 Silicon-containing resin composition TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-23 US disclosed
US-20200179243-A1 TOPICAL COMPOSITIONS AND METHODS OF USING THEREOF OHIO STATE INNOVATION FOUNDATION (US) 2020-06-11 US disclosed
US-20200139433-A1 METHOD FOR PRODUCING SURFACE-MODIFIED METAL OXIDE FINE PARTICLE, METHOD FOR PRODUCING IMPROVED METAL OXIDE FINE PARTICLES, SURFACE-MODIFIED METAL OXIDE FINE PARTICLES, AND METAL OXIDE FINE PARTICLE DISPERSION LIQUID TOKYO OHKA KOGYO CO., LTD. (JP) 2020-05-07 US disclosed
EP-3318606-B1 SILICON-CONTAINING RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2020-03-18 EP disclosed
WO-2020045632-A1 HARD COATING FILM, BASE MATERIAL WITH HARD COATING FILM, COATING COMPOSITION AND WINDOW MATERIAL 旭化成株式会社 2020-03-05 WO disclosed
EP-3275940-B1 ENERGY-SENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2019-12-18 EP disclosed
WO-2019163918-A1 HIGH-DURABILITY ANTIFOGGING COATING FILM AND COATING COMPOSITION 旭化成株式会社 2019-08-29 WO disclosed
US-20190225804-A1 ENERGY-SENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2019-07-25 US disclosed
EP-3508473-A1 METHOD FOR PRODUCING CARBAMIC ACID ESTER National Institute of Advanced Industrial Science and Technology (JP) 2019-07-10 EP disclosed
US-20190185420-A1 PRODUCTION METHOD OF CARBAMIC ACID ESTER NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2019-06-20 US disclosed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US disclosed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP disclosed
EP-3490569-A1 TOPICAL COMPOSITIONS AND METHODS OF USING THEREOF Ohio State Innovation Foundation (US) 2019-06-05 EP disclosed
EP-1520891-B1 FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM JSR CORP (JP) 2019-05-01 EP disclosed
EP-3330320-B1 POLYIMIDE PRECURSOR COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2019-04-24 EP disclosed
EP-1870439-B1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL CORP (JP) 2018-10-03 EP disclosed
US-20180223045-A1 POLYIMIDE PRECURSOR COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2018-08-09 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20180187010-A1 SILICON-CONTAINING RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-05 US disclosed
EP-1641063-B1 POLYMER ELECTROLYTE, POLYMER ELECTROLYTE MEMBRANE THEREFROM, MEMBRANE ELECTRODE ASSEMBLY AND POLYMER ELECTROLYTE FUEL CELL TORAY INDUSTRIES (JP) 2018-06-20 EP disclosed
EP-3330320-A1 POLYIMIDE PRECURSOR COMPOSITION Tokyo Ohka Kogyo Co., Ltd. (JP) 2018-06-06 EP disclosed
EP-3318606-A1 SILICON-CONTAINING RESIN COMPOSITION Tokyo Ohka Kogyo Co., Ltd. (JP) 2018-05-09 EP disclosed
WO-2018023128-A1 TOPICAL COMPOSITIONS AND METHODS OF USING THEREOF OHIO STATE INNOVATION FOUNDATION (US) 2018-02-01 WO disclosed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO disclosed
EP-3275940-A1 ENERGY-SENSITIVE RESIN COMPOSITION Tokyo Ohka Kogyo Co., Ltd. (JP) 2018-01-31 EP disclosed
US-9870924-B2 Diffusion agent composition, method of forming impurity diffusion layer, and solar cell TOKYO OHKA KOGYO CO., LTD. (JP) 2018-01-16 US disclosed
EP-2131423-B1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO LTD (JP) 2017-11-15 EP disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
EP-2573800-B1 DIFFUSION AGENT COMPOSITION AND METHOD OF FORMING AN IMPURITY DIFFUSION LAYER TOKYO OHKA KOGYO CO LTD (JP) 2017-11-08 EP disclosed
EP-1930298-B1 ZIRCONIUM OXIDE-TIN OXIDE COMPOSITE SOL, COATING COMPOSITION AND OPTICAL MEMBER NISSAN CHEMICAL IND LTD (JP) 2017-10-04 EP disclosed
WO-2017144401-A1 LUMINESCENT PARTICLES BASF SE (DE) 2017-08-31 WO disclosed
US-9708492-B2 LED device and coating liquid used for production of same Konica Minolta, Inc. (JP) 2017-07-18 US disclosed
WO-2017036997-A1 PROCESS FOR FORMULATING QUANTUM DOTS BASF SE (DE) 2017-03-09 WO disclosed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US disclosed
EP-2181147-B1 POLYMER COMPOSITIONS CONTAINING SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS MOMENTIVE PERFORMANCE MAT INC (US) 2017-01-11 EP disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-9268229-B2 Composition for forming resist underlayer film, and pattern-forming method JSR CORPORATION (JP) 2016-02-23 US disclosed
US-9250526-B2 Composition for forming resist underlayer film, and pattern-forming method JSR CORPORATION (JP) 2016-02-02 US disclosed
US-20160027946-A1 OPTICAL DEVICE JSR CORPORATION (JP) 2016-01-28 US disclosed
US-9233840-B2 Method for improving self-assembled polymer features INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-01-12 US disclosed
US-20160002526-A1 PHOSPHOR DISPERSION, LED DEVICE AND METHOD FOR MANUFACTURING SAME Konica Minolta, Inc. (JP) 2016-01-07 US disclosed
US-20150355546-A1 COMPOSITION FOR SILICON-CONTAINING FILM FORMATION, PATTERN-FORMING METHOD, AND POLYSILOXANE COMPOUND JSR CORPORATION (JP) 2015-12-10 US disclosed
US-20150353740-A1 LED DEVICE AND COATING LIQUID USED FOR PRODUCTION OF SAME Konica Minolta, Inc. (JP) 2015-12-10 US disclosed
US-20150333233-A1 LIGHT EMITTING DEVICE Konica Minolta, Inc. (JP) 2015-11-19 US disclosed
EP-2945197-A1 LED DEVICE AND COATING LIQUID USED FOR PRODUCTION OF SAME Konica Minolta, Inc. (JP) 2015-11-18 EP disclosed
US-9190276-B2 Method of diffusing impurity-diffusing component and method of manufacturing solar cell TOKYO OHKA KOGYO CO., LTD. (JP) 2015-11-17 US disclosed
US-9184352-B2 Phosphor dispersion liquid, and production method for LED device using same Konica Minolta, Inc. (JP) 2015-11-10 US disclosed
EP-2940743-A1 LIGHT EMITTING DEVICE Konica Minolta, Inc. (JP) 2015-11-04 EP disclosed
EP-2940748-A1 COATING LIQUID, AND LED DEVICE PROVIDED WITH REFLECTIVE LAYER THAT IS FORMED OF CURED PRODUCT OF SAID COATING LIQUID Konica Minolta, Inc. (JP) 2015-11-04 EP disclosed
EP-2940744-A1 PHOSPHOR DISPERSION, LED DEVICE AND METHOD FOR MANUFACTURING SAME Konica Minolta, Inc. (JP) 2015-11-04 EP disclosed
US-9175215-B2 Method for producing phosphor dispersion liquid and method for manufacturing LED device Konica Minolta, Inc. (JP) 2015-11-03 US disclosed
US-20150307717-A1 COATING LIQUID AND LED DEVICE INCLUDING REFLECTIVE LAYER MADE OF PRODUCT OF CURING THEREOF Konica Minolta, Inc. (JP) 2015-10-29 US disclosed
US-9170492-B2 Silicon-containing film-forming composition, silicon-containing film, and pattern forming method JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9140985-B2 2015-09-22 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
US-9116427-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-08-25 US disclosed
US-9105929-B2 Negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-11 US disclosed
US-20150221837-A1 SEALANT FOR LED DEVICE, LED DEVICE, AND METHOD FOR PRODUCING LED DEVICE Konica Minolta, Inc. (JP) 2015-08-06 US disclosed
US-20150160556-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-06-11 US disclosed
US-20150162511-A1 LED DEVICE AND METHOD FOR MANUFACTURING SAME Konica Minolta, Inc. (JP) 2015-06-11 US disclosed
US-9050624-B2 Film-forming composition for imprinting, method of manufacturing a structure, and structure TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
EP-2879195-A1 LED DEVICE AND METHOD FOR MANUFACTURING SAME Konica Minolta, Inc. (JP) 2015-06-03 EP disclosed
US-9048175-B2 Diffusion-agent composition for forming an impurity-diffusing agent layer on a semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-02 US disclosed
US-20150140700-A1 METHOD FOR PRODUCING PHOSPHOR DISPERSION LIQUID AND METHOD FOR MANUFACTURING LED DEVICE Konica Minolta, Inc. (JP) 2015-05-21 US disclosed
US-20150118773-A1 PHOSPHOR DISPERSION LIQUID, AND PRODUCTION METHOD FOR LED DEVICE USING SAME Konica Minolta, Inc. (JP) 2015-04-30 US disclosed
EP-2853577-A1 METHOD FOR PRODUCING PHOSPHOR DISPERSION LIQUID AND METHOD FOR MANUFACTURING LED DEVICE Konica Minolta, Inc. (JP) 2015-04-01 EP disclosed
US-8993223-B2 Resist pattern-forming method JSR CORPORATION (JP) 2015-03-31 US disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-20150050600-A9 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-02-19 US disclosed
US-20150048046-A1 METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION JSR CORPORATION (JP) 2015-02-19 US disclosed
US-8956807-B2 Method for forming resist pattern, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-02-17 US disclosed
US-8934165-B2 Electrophoretic particle, manufacturing method of electrophoretic particle, electrophoretic dispersed liquid, electrophoretic sheet, electrophoretic apparatus, and electronic equipment SEIKO EPSON CORPORATION (JP) 2015-01-13 US disclosed
US-8927147-B2 Negative electrode base member KANTO GAKUIN SCHOOL CORPORATION (JP) 2015-01-06 US disclosed
US-8927201-B2 Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition JSR CORPORATION (JP) 2015-01-06 US disclosed
EP-2800154-A1 SEALANT FOR LED DEVICE, LED DEVICE, AND METHOD FOR PRODUCING LED DEVICE Konica Minolta, Inc. (JP) 2014-11-05 EP disclosed
US-8822034-B2 Film-forming composition, diffusing agent composition, method for manufacturing film-forming composition, and method for manufacturing diffusing agent composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-02 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20140227865-A1 DIFFUSION-AGENT COMPOSITION, METHOD FOR FORMING IMPURITY-DIFFUSION LAYER, AND SOLAR CELL TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-14 US disclosed
EP-2138501-B1 Functional silane compound, coating solution, and method for manufacturing plastic lens HOYA CORP (JP) 2014-08-13 EP disclosed
EP-2752898-A1 PHOSPHOR DISPERSION LIQUID, AND PRODUCTION METHOD FOR LED DEVICE USING SAME Konica Minolta, Inc. (JP) 2014-07-09 EP disclosed
US-8748301-B2 Diffusing agent composition for ink-jet, and method for production of electrode or solar battery using the composition TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-10 US disclosed
US-8734906-B2 Films and method of production thereof BRISMAT INC. (US) 2014-05-27 US disclosed
US-8734904-B2 Methods of forming topographical features using segregating polymer mixtures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-27 US disclosed
US-20140134544-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-05-15 US disclosed
US-8703395-B2 Pattern-forming method JSR CORPORATION (JP) 2014-04-22 US disclosed
EP-2472655-B1 Negative electrode base member TOKYO OHKA KOGYO CO LTD (JP) 2014-03-12 EP disclosed
US-8669042-B2 Resist pattern-forming method JSR CORPORATION (JP) 2014-03-11 US disclosed
US-20140030839-A1 METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL TOKYO OHKA KOGYO CO., LTD. (JP) 2014-01-30 US disclosed
US-20140030660-A1 MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION JSR CORPORATION (JP) 2014-01-30 US disclosed
US-20130331520-A1 STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2013-12-12 US disclosed
US-20130281592-A1 FILM-FORMING COMPOSITION, DIFFUSING AGENT COMPOSITION, METHOD FOR MANUFACTURING FILM-FORMING COMPOSITION, AND METHOD FOR MANUFACTURING DIFFUSING AGENT COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-24 US disclosed
US-20130265632-A1 ELECTROPHORETIC PARTICLE, MANUFACTURING METHOD OF ELECTROPHORETIC PARTICLE, ELECTROPHORETIC DISPERSED LIQUID, ELECTROPHORETIC SHEET, ELECTROPHORETIC APPARATUS, AND ELECTRONIC EQUIPMENT SEIKO EPSON CORPORATION (JP) 2013-10-10 US disclosed
US-8551651-B2 Secondary cell having negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-08 US disclosed
US-20130256264-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-10-03 US disclosed
US-20130252098-A1 NEGATIVE ELECTRODE BASE MEMBER KANTO GAKUIN UNIVERSITY SURFACE ENGINEERING RESEARCH INSTITUTE (JP) 2013-09-26 US disclosed
US-20130252099-A1 NEGATIVE ELECTRODE BASE MEMBER KANTO GAKUIN UNIVERSITY SURFACE ENGINEERING RESEARCH INSTITUTE (JP) 2013-09-26 US disclosed
US-20130233825-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-09-12 US disclosed
US-20130233826-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-09-12 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
US-8475690-B2 Diffusing agent composition, method of forming impurity diffusion layer, and solar battery TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-8466229-B2 Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film HITACHI CHEMICAL CO., LTD. (JP) 2013-06-18 US disclosed
EP-1746122-B1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2013-06-12 EP disclosed
US-8455141-B2 Polymer electrolyte as well as polymer electrolyte membrane, membrane electrode assembly and polymer electrolyte fuel cell using the same TORAY INDUSTRIES, INC. (JP) 2013-06-04 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
US-20130109123-A1 DIFFUSING AGENT COMPOSITION AND METHOD OF FORMING IMPURITY DIFFUSION LAYER TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-02 US disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
EP-2573800-A1 DIFFUSION AGENT COMPOSITION, METHOD OF FORMING AN IMPURITY DIFFUSION LAYER, AND SOLAR CELL Tokyo Ohka Kogyo Co., Ltd. (JP) 2013-03-27 EP disclosed
US-8404786-B2 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same JSR CORPORATION (JP) 2013-03-26 US disclosed
EP-1705208-B1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME JSR CORP (JP) 2013-03-20 EP disclosed
US-20130061922-A1 DIFFUSION AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR CELL TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-14 US disclosed
US-8378008-B2 Surface-modified non-halogenated mineral fillers MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2013-02-19 US disclosed
US-8362199-B2 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2013-01-29 US disclosed
EP-1705207-B1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR CORP (JP) 2012-10-24 EP disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8268403-B2 Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength JSR CORPORATION (JP) 2012-09-18 US disclosed
US-20120231575-A1 METHOD FOR PRODUCING SOLAR CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-09-13 US disclosed
EP-2495771-A1 SOLAR CELL Hitachi Chemical Company, Ltd. (JP) 2012-09-05 EP disclosed
EP-2495770-A1 METHOD FOR PRODUCING SOLAR CELL Hitachi Chemical Company, Ltd. (JP) 2012-09-05 EP disclosed
US-8253251-B2 Method for producing low-k film, semiconductor device, and method for manufacturing the same ELPIDA MEMORY, INC. (JP) 2012-08-28 US disclosed
US-20120211076-A1 SOLAR CELL HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-08-23 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
EP-2472655-A1 Negative electrode base member Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-07-04 EP disclosed
US-20120135146-A1 METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES JSR CORPORATION (JP) 2012-05-31 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-8173348-B2 Method of forming pattern and composition for forming of organic thin-film for use therein JSR CORPORATION (JP) 2012-05-08 US disclosed
US-20120103935-A1 METHOD FOR IMPROVING SELF-ASSEMBLED POLYMER FEATURES JSR CORPORATION (JP) 2012-05-03 US disclosed
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 US disclosed
US-8158981-B2 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-04-17 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-8119324-B2 Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film JSR CORPORATION (JP) 2012-02-21 US disclosed
US-20120021190-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING SILICA COATING FILM, AND APPARATUS AND MEMBER EACH COMPRISING SILICA COATING FILM HITACHI CHEMICAL COMPANY, LTD. (JP) 2012-01-26 US disclosed
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION MATSUTANI HIROSHI (JP) 2011-12-22 US disclosed
US-20110254191-A1 FILM-FORMING COMPOSITION FOR IMPRINTING, METHOD OF MANUFACTURING A STRUCTURE, AND STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-20 US disclosed
US-8034545-B2 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2011-10-11 US disclosed
EP-1160848-B1 Composition for silica-based film formation JSR CORP (JP) 2011-10-05 EP disclosed
US-8030221-B2 Method for producing low-k l film, semiconductor device, and method for manufacturing the same ELPIDA MEMORY, INC. (JP) 2011-10-04 US disclosed
US-20110223329-A1 Films and method of production thereof UNIVERSITY OF QUEENSLAND (AU) 2011-09-15 US disclosed
EP-1981074-B1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORP (JP) 2011-06-22 EP disclosed
US-7939590-B2 Composition for forming silica-based coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-10 US disclosed
US-7932295-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2011-04-26 US disclosed
US-20110079262-A1 DIFFUSING AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-07 US disclosed
US-7919016-B2 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-04-05 US disclosed
US-20110077364-A1 COMPOSITION CONTAINING SILICON-CONTAINING POLYMER, CURED PRODUCT OF THE COMPOSITION, SILICON-CONTAINING POLYMER, AND METHOD OF PRODUCING THE SILICON-CONTAINING POLYMER JSR CORPORATION (JP) 2011-03-31 US disclosed
US-7893538-B2 Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device JSR CORPORATION (JP) 2011-02-22 US disclosed
EP-1323742-B1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORP (JP) 2011-02-16 EP disclosed
US-20110017291-A1 DIFFUSING AGENT COMPOSITION FOR INK-JET, AND METHOD FOR PRODUCTION OF ELECTRODE OR SOLAR BATTERY USING THE COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-27 US disclosed
US-7875317-B2 formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors JSR CORPORATION (JP) 2011-01-25 US disclosed
US-20110009545-A1 SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2011-01-13 US disclosed
US-20100289143-A1 METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME ELPIDA MEMORY, INC (JP) 2010-11-18 US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 US disclosed
EP-1296365-B1 Method of film formation JSR CORP (JP) 2010-09-22 EP disclosed
US-20100233635-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN JSR CORPORATION (JP) 2010-09-16 US disclosed
US-20100233632-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-09-16 US disclosed
US-20100207076-A1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-08-19 US disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed
US-20100168327-A1 POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME JSR CORPORATION (JP) 2010-07-01 US disclosed
US-20100167024-A1 NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN JSR CORPORATION (JP) 2010-07-01 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-7736748-B2 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same JSR CORPORATION (JP) 2010-06-15 US disclosed
US-7736837-B2 Antireflective coating composition based on silicon polymer AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-06-15 US disclosed
US-7718708-B2 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-05-18 US disclosed
US-20100119939-A1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-20100119736-A1 AMBIENT PRESSURE SYNTHESIS OF ZEOLITE FILMS AND THEIR APPLICATION AS CORROSION RESISTANT COATINGS THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2010-05-13 US disclosed
EP-2181147-A2 POLYMER COMPOSITIONS CONTAINING SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS Momentive Performance Materials Inc. (US) 2010-05-05 EP disclosed
US-7709551-B2 Coating composition for film with low refractive index and film prepared therefrom LG CHEM, LTD. (KR) 2010-05-04 US disclosed
US-20100102321-A1 RADIATION-SENSITIVE COMPOSITION, METHOD OF FORMING SILICA-BASED COATING FILM, SILICA-BASED COATING FILM, APPARATUS AND MEMBER HAVING SILICA-BASED COATING FILM AND PHOTOSENSITIZING AGENT FOR INSULATING FILM HITACHI CHEMICAL COMPANY, LTD. (JP) 2010-04-29 US disclosed
US-20100093969-A1 Process for making siloxane polymers ZHANG RUZHI 2010-04-15 US disclosed
US-7687590-B2 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts HITACHI CHEMICAL COMPANY, LTD. (JP) 2010-03-30 US disclosed
US-7682701-B2 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts HITACHI CHEMICAL CO., LTD. (JP) 2010-03-23 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
US-20100041234-A1 Process For Restoring Dielectric Properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-02-18 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
WO-2006129973-A9 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG CHEM, LTD. (KR) 2010-01-21 WO disclosed
US-20100007025-A1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2010-01-14 US disclosed
EP-2138501-A2 Functional silane compound, coating solution, and method for manufacturing plastic lens Hoya Corporation (JP) 2009-12-30 EP disclosed
US-20090317541-A1 FUNCTIONAL SILANE COMPOUND, COATING SOLUTION, AND METHOD FOR MANUFACTURING PLASTIC LENS HOYA CORPORATION (JP) 2009-12-24 US disclosed
US-20090311622-A1 METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING UNDER-LAYER FILM JSR CORPORATION (JP) 2009-12-17 US disclosed
EP-2132253-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ Electronic Materials USA Corp. (US) 2009-12-16 EP disclosed
EP-2131423-A1 NEGATIVE ELECTRODE BASE MEMBER Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-12-09 EP disclosed
EP-2129733-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ Electronic Materials USA Corp. (US) 2009-12-09 EP disclosed
US-20090298671-A1 Compositions for Preparing Low Dielectric Materials Containing Solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-12-03 US disclosed
US-7625642-B2 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating HITACHI CHEMICAL CO., LTD (JP) 2009-12-01 US disclosed
EP-1090967-B1 Composition for film formation, method of film formation, and insulating film JSR CORP (JP) 2009-11-11 EP disclosed
US-20090251652-A1 Silica based positive type photosensitive organic compound HITACHI CHEMICAL CO., LTD. 2009-10-08 US disclosed
US-20090240017-A1 Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation HITACHI CHEMICAL CO., LTD. (JP) 2009-09-24 US disclosed
US-20090220897-A1 RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE HITACHI CHEMICAL CO., LTD. (JP) 2009-09-03 US disclosed
US-20090214796-A1 Method for Forming Antireflection Film MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2009-08-27 US disclosed
US-20090186203-A1 FILM-FORMING COMPOSITION FOR IMPRINTING, METHOD OF MANUFACTURING STRUCTURE, AND STRUCTURE TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-7556860-B2 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2009-07-07 US disclosed
US-7556682-B2 Zirconium oxide-tin oxide composite sol, coating composition and optical member NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-07-07 US disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-7531590-B2 Additives to prevent degradation of alkyl-hydrogen siloxanes FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2009-05-12 US disclosed
US-7528207-B2 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2009-05-05 US disclosed
US-20090110838-A1 Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film HITACHI CHEMICAL CO., LTD (JP) 2009-04-30 US disclosed
EP-1127929-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2009-04-15 EP disclosed
EP-2048541-A1 METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING LOWER-LAYER FILM JSR Corporation (JP) 2009-04-15 EP disclosed
US-7514151-B2 Insulating film and method for forming the same, and film-forming composition JSR CORPORATION (JP) 2009-04-07 US disclosed
EP-2035518-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ Electronic Materials USA Corp. (US) 2009-03-18 EP disclosed
EP-2034364-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN JSR Corporation (JP) 2009-03-11 EP disclosed
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
US-7482676-B2 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-01-27 US disclosed
US-20090018247-A1 COMPOSITION FOR FORMING SILICA-BASED COATING FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-15 US disclosed
EP-1999167-A2 ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR Novolen Technology Holdings, C.V. (NL) 2008-12-10 EP disclosed
US-7462678-B2 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2008-12-09 US disclosed
US-20080276835-A1 Zirconium Oxide-Tin Oxide Composite Sol, Coating Composition and Optical Member NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-11-13 US disclosed
EP-1832351-B1 Low dielectric materials and methods for making same AIR PROD & CHEM (US) 2008-11-12 EP disclosed
US-20080268264-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-10-30 US disclosed
US-20080264672-A1 Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-10-30 US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
US-20080260956-A1 Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part HITACHI CHEMICAL CO., LTD. (JP) 2008-10-23 US disclosed
EP-1981074-A1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE JSR Corporation (JP) 2008-10-15 EP disclosed
US-20080246153-A1 ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE JSR CORPORATION (JP) 2008-10-09 US disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
EP-1959485-A2 Activated chemical process for enhancing material properties of dielectric films Air Products and Chemicals, Inc. (US) 2008-08-20 EP disclosed
EP-1246239-B1 Method of forming dual damascene structure JSR CORP (JP) 2008-07-23 EP disclosed
US-7399715-B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2008-07-15 US disclosed
US-20080166478-A1 Composite Material, Coating Liquid and Manufacturing Method of Composite Material TOTO LTD. (JP) 2008-07-10 US disclosed
EP-1930298-A1 ZIRCONIUM OXIDE-TIN OXIDE COMPOSITE SOL, COATING COMPOSITION AND OPTICAL MEMBER Nissan Chemical Industries, Ltd. (JP) 2008-06-11 EP disclosed
US-20080090926-A1 Coating Composition for Film with Low Refractive Index and Film Prepared Therefrom LG CHEM, LTD. (KR) 2008-04-17 US disclosed
US-7358300-B2 Comprising polysiloxane obtained by hydrolytic condensation; alcoholic solvent alcohol capable of dissolving siloxane resin, ammonium salt, and thermal decomposing/volatile compound; curing; bonding and high strength; mechanical properties HITACHI CHEMICAL CO., LTD. (JP) 2008-04-15 US disclosed
EP-1890172-A1 METHOD FOR FORMING ANTIREFLECTION FILM Hitachi Chemical Co., Ltd. (JP) 2008-02-20 EP disclosed
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20080038527-A1 Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation JSR CORPORATION (JP) 2008-02-14 US disclosed
US-7320854-B2 Mixture of oxide particles, polymerizable compound,radiation sensitive decomposer and releasing agent JSR CORPORATION (JP) 2008-01-22 US disclosed
US-20080012074-A1 Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-01-17 US disclosed
EP-1535976-B1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR CORP (JP) 2008-01-16 EP disclosed
EP-1879234-A2 Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors Air Products and Chemicals, Inc. (US) 2008-01-16 EP disclosed
US-20070299176-A1 Photodefinable low dielectric constant material and method for making and using same AIR PRODUCTS AND CHEMICALS, INC. 2007-12-27 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
US-20070297966-A1 Conductive tin oxide sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-12-27 US disclosed
EP-1870439-A2 Conductive tin oxide sol and process for producing same Nissan Chemical Industries, Ltd. (JP) 2007-12-26 EP disclosed
WO-2007146289-A2 POLYMER COMPOSITIONS CONTAINING SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2007-12-21 WO disclosed
WO-2007146290-A2 SURFACE-MODIFIED NON-HALOGENATED MINERAL FILLERS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2007-12-21 WO disclosed
US-20070287791-A1 Polymer compositions containing surface-modified non-halogenated mineral fillers MOMENTIVE PERFORMANCE MATERIALS INC. 2007-12-13 US disclosed
US-20070287773-A1 Surface-modified non-halogenated mineral fillers MOMENTIVE PERFORMANCE MATERIALS INC. 2007-12-13 US disclosed
US-7297464-B2 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2007-11-20 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-7294585-B2 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2007-11-13 US disclosed
EP-1852903-A2 Compositions for preparing materials with a low dielectric constant Air Products and Chemicals, Inc. (US) 2007-11-07 EP disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
EP-1837173-A1 COMPOSITE MATERIAL, COATING FLUID AND METHOD FOR PRODUCING COMPOSITE MATERIAL TOTO LTD. (JP) 2007-09-26 EP disclosed
EP-1491503-B1 Metal oxide particle comprising the metals tin, zinc and antimony and process for producing same NISSAN CHEMICAL IND LTD (JP) 2007-09-26 EP disclosed
EP-1837086-A2 Low dielectric materials and methods for making same Air Products and Chemicals, Inc. (US) 2007-09-26 EP disclosed
WO-2007106348-A2 ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) 2007-09-20 WO disclosed
US-20070213204-A1 Ziegler-Natta catalyst with in situ-generated donor NOVOLEN TECHNOLOGY HOLDINGS C.V. 2007-09-13 US disclosed
EP-1832351-A2 Low dielectric materials and methods for making same Air Products and Chemicals, Inc. (US) 2007-09-12 EP disclosed
EP-1829945-A1 FILM, SILICA FILM AND METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING SILICA FILM, AND ELECTRONIC PART Hitachi Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
EP-1826613-A2 Top coat for lithography processes Air Products and Chemicals, Inc. (US) 2007-08-29 EP disclosed
US-20070196773-A1 Top coat for lithography processes VERSUM MATERIALS US, LLC 2007-08-23 US disclosed
US-20070185263-A1 COMPOSITION FOR FORMING SILICA-BASED COATING WITH A LOW REFRACTIVE INDEX TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-09 US disclosed
US-20070185262-A1 COMPOSITION FOR FORMING COLORED SILICA-BASED COATING TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-09 US disclosed
US-7238462-B2 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2007-07-03 US disclosed
EP-1376671-B1 Compositions for preparing materials with a low dielectric constant AIR PROD & CHEM (US) 2007-06-20 EP disclosed
US-20070134530-A1 Polymer electrolyte as well as polymer electrolyte membrane, membrane electrode assembly and polymer electrolyte fuel cell using the same TORAY INDUSTRIES, INC. (JP) 2007-06-14 US disclosed
EP-1784465-A1 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG Chem, Ltd. (KR) 2007-05-16 EP disclosed
US-7205030-B2 Method for forming porous film SANYO ELECTRIC CO., LTD. (JP) 2007-04-17 US disclosed
US-20070031687-A1 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same JSR CORPORATION (JP) 2007-02-08 US disclosed
US-20070027287-A1 Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same JSR CORPORATION (JP) 2007-02-01 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20070020467-A1 Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same JSR CORPORATION (JP) 2007-01-25 US disclosed
US-20070021580-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-25 US disclosed
EP-1088868-B1 Composition for film formation, method of film formation, and insulating film JSR CORP (JP) 2007-01-24 EP disclosed
EP-1746139-A1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME JSR Corporation (JP) 2007-01-24 EP disclosed
EP-1746122-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
EP-1746123-A1 METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION JSR Corporation (JP) 2007-01-24 EP disclosed
US-20070015892-A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film JSR CORPORATION (JP) 2007-01-18 US disclosed
EP-1589078-B1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL IND LTD (JP) 2007-01-10 EP disclosed
EP-1298176-B1 Stacked film insulating film and substrate for semiconductor JSR CORP (JP) 2007-01-03 EP disclosed
US-7157024-B2 Metal oxide particle and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-02 US disclosed
EP-1295924-B1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORP (JP) 2006-12-13 EP disclosed
US-20060275614-A1 Insulating film and method for forming the same, and film-forming composition JSR CORPORATION (JP) 2006-12-07 US disclosed
WO-2006129973-A1 COATING COMPOSITION FOR FILM WITH LOW REFRACTIVE INDEX AND FILM PREPARED THEREFROM LG CHEM, LTD. (KR) 2006-12-07 WO disclosed
US-20060270787-A1 Additives to prevent degradation of alkyl-hydrogen siloxanes VERSUM MATERIALS US, LLC 2006-11-30 US disclosed
US-20060249818-A1 Compositions for preparing low dielectric materials VERSUM MATERIALS US, LLC 2006-11-09 US disclosed
US-20060249713-A1 Compositions for preparing low dielectric materials VERSUM MATERIALS US, LLC 2006-11-09 US disclosed
EP-1719793-A1 POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME JSR Corporation (JP) 2006-11-08 EP disclosed
US-7129311-B2 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. (US) 2006-10-31 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
US-7122880-B2 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. (US) 2006-10-17 US disclosed
EP-1253175-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-10-11 EP disclosed
US-20060216531-A1 Laminate and method of forming the same, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-09-28 US disclosed
EP-1705208-A1 COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1705206-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
EP-1705207-A1 METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM JSR Corporation (JP) 2006-09-27 EP disclosed
US-20060210812-A1 Insulating film and method of forming the same JSR CORPORATION (JP) 2006-09-21 US disclosed
US-7108954-B2 Radiation-sensitive composition changing in refractive index and method of changing refractive index JSR CORPORATION (JP) 2006-09-19 US disclosed
EP-1696478-A1 INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-08-30 EP disclosed
US-20060183055-A1 Method for defining a feature on a substrate VERSUM MATERIALS US, LLC 2006-08-17 US disclosed
EP-1691410-A2 Method for defining a feature on a substrate Air Products and Chemicals, Inc. (US) 2006-08-16 EP disclosed
EP-1122770-B1 Silica-based insulating film and its manufacture JSR CORP (JP) 2006-08-09 EP disclosed
US-20060159861-A1 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. (US) 2006-07-20 US disclosed
EP-1679184-A1 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM JSR Corporation (JP) 2006-07-12 EP disclosed
US-20060141693-A1 Semiconductor multilayer interconnection forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-29 US disclosed
EP-1672427-A1 RADIATION-CURING COMPOSITION, METHOD FOR STORING SAME, METHOD FOR FORMING CURED FILM, METHOD FOR FORMING PATTERN, METHOD FOR USING PATTERN, ELECTRONIC COMPONENT, AND OPTICAL WAVEGUIDE Hitachi Chemical Co., Ltd. (JP) 2006-06-21 EP disclosed
EP-1672426-A1 RADIATION CURABLE COMPOSITION, STORING METHOD THEREOF, FORMING METHOD OF CURED FILM, PATTERNING METHOD, USE OF PATTERN, ELECTRONIC COMPONENTS AND OPTICAL WAVEGUIDE HITACHI CHEMICAL COMPANY, LTD. (JP) 2006-06-21 EP disclosed
US-20060110610-A1 Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2006-05-25 US disclosed
US-7026053-B2 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2006-04-11 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
EP-1641063-A1 POLYMER ELECTROLYTE, POLYMER ELECTROLYTE MEMBRANE THEREFROM, MEMBRANE ELECTRODE ASSEMBLY AND POLYMER ELECTROLYTE FUEL CELL TORAY INDUSTRIES, INC. (JP) 2006-03-29 EP disclosed
EP-1045290-B1 Composition for resist underlayer film and method for producing the same JSR CORP (JP) 2006-03-15 EP disclosed
US-7011868-B2 Fluorine-free plasma curing process for porous low-k materials AXCELIS TECHNOLOGIES, INC. (US) 2006-03-14 US disclosed
US-20060052566-A1 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts HITACHI CHEMICAL CO., LTD. (JP) 2006-03-09 US disclosed
EP-1146092-B1 Composition for film formation, method of film formation, and silica-based film JSR CORP (JP) 2006-03-08 EP disclosed
US-20060047034-A1 Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film HITACHI CHEMICAL CO., LTD. (JP) 2006-03-02 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed
US-20060006541-A1 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-01-12 US disclosed
EP-1615260-A2 Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device JSR Corporation (JP) 2006-01-11 EP disclosed
US-20050266344-A1 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2005-12-01 US disclosed
US-20050260420-A1 Low dielectric materials and methods for making same VERSUM MATERIALS US, LLC 2005-11-24 US disclosed
US-20050255326-A1 Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts HITACHI CHEMICAL CO., LTD. (JP) 2005-11-17 US disclosed
EP-1593149-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS Axcelis Technologies, Inc. (US) 2005-11-09 EP disclosed
US-20050239953-A1 Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide HITACHI CHEMICAL CO., LTD. (JP) 2005-10-27 US disclosed
US-20050239907-A1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2005-10-27 US disclosed
EP-1589078-A1 Anhydrous zinc antimonate sol and process for producing same NISSAN CHEMICAL INDUSTRIES, LIMITED (JP) 2005-10-26 EP disclosed
EP-1583141-A2 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-10-05 EP disclosed
EP-1577935-A2 Compositions for preparing low dielectric materials containing solvents AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-09-21 EP disclosed
EP-1573086-A2 ADDITIVES TO PREVENT DEGRADATION OF ALKYL-HYDROGEN SILOXANES Arch Specialty Chemicals, Inc. (US) 2005-09-14 EP disclosed
US-20050196974-A1 Compositions for preparing low dielectric materials containing solvents VERSUM MATERIALS US, LLC 2005-09-08 US disclosed
US-20050196535-A1 Solvents and methods using same for removing silicon-containing residues from a substrate AIR PRODUCTS AND CHEMICALS, INC. 2005-09-08 US disclosed
EP-1566836-A1 SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2005-08-24 EP disclosed
EP-1117102-B1 Method of manufacturing material for forming insulating film JSR CORP (JP) 2005-08-10 EP disclosed
CN-1651159-A Cleaning CVD chambers following deposition of porogen-containing materials AIR PROD & CHEM (US) 2005-08-10 CN disclosed
EP-1058274-B1 Composition for film formation and material for insulating film formation JSR CORP (JP) 2005-07-27 EP disclosed
US-6902771-B2 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-06-07 US disclosed
US-20050119394-A1 Comprising polysiloxane obtained by hydrolytic condensation; alcoholic solvent alcohol capable of dissolving siloxane resin, ammonium salt, and thermal decomposing/volatile compound; curing; bonding and high strength; mechanical properties HITACHI CHEMICAL CO., LTD. (JP) 2005-06-02 US disclosed
EP-1535976-A1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR Corporation (JP) 2005-06-01 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050112386-A1 Composition for film formation, method for preparing the composition, and method for forming insulating film JSR CORPORATION (JP) 2005-05-26 US disclosed
US-6890605-B2 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2005-05-10 US disclosed
US-20050096415-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR CORPORATION (JP) 2005-05-05 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
EP-1520891-A1 Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film JSR Corporation (JP) 2005-04-06 EP disclosed
US-20050042464-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2005-02-24 US disclosed
US-20050012078-A1 Metal oxide particle and process for producing same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2005-01-20 US disclosed
EP-1494072-A2 Radiation sensitive refractive index changing composition, pattern forming method and optical material JSR Corporation (JP) 2005-01-05 EP disclosed
US-20040265737-A1 Radiation sensitive refractive index changing composition, pattern forming method and optical material JSR CORPORATION (JP) 2004-12-30 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6828078-B2 Photoresist for use in optoelectronic and display fields; porosity; optical fibers JSR CORPORATION (JP) 2004-12-07 US disclosed
US-6824833-B2 STACKED DIELECTRIC JSR CORPORATION (JP) 2004-11-30 US disclosed
CN-1542071-A Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-11-03 CN disclosed
US-20040213911-A1 Method for forming porous film SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-10-28 US disclosed
EP-1464410-A1 Low dielectric materials and methods for making same AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-10-06 EP disclosed
US-6800330-B2 PRODUCT OBTAINED BY HYDROLYZING AND CONDENSING AT LEAST ONE SILANE COMPOUND, A COMPOUND COMPATIBLE WITH OR DISPERSIBLE IN THAT COMPOUND AND HAVING A BOILING POINT OR DECOMPOSITION TEMPERATURE OF 250-450 DEGREES C, SOLVENT JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed
US-6787289-B2 OPTICS JSR CORPORATION (JP) 2004-09-07 US disclosed
US-6787193-B2 DECOMPOSITION OF AN ORGANOSILICON COMPOUND JSR CORPORATION (JP) 2004-09-07 US disclosed
WO-2004066374-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS AXCELIS TECHNOLOGIES, INC. (US) 2004-08-05 WO disclosed
US-6770326-B2 COMPRISES POLYSILOXANE GEL AND FILLERS (ALUMINUM OXIDE, ZINC OXIDE, AND BORON NITRIDE) FOR ENCAPSULATING ELECTRONIC CIRCUITRY LORD CORPORATION 2004-08-03 US disclosed
US-20040127070-A1 Additives to prevent degradation of alkyl-hydrogen siloxanes ARCH SPECIALTY CHEMICALS, INC. 2004-07-01 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6749944-B2 VAPOR DEPOSITION, OSCILLATION, HEATING USING ORGANOSILICON COMPOUND; FORMING DIELECTRIC JSR CORPORATION (JP) 2004-06-15 US disclosed
WO-2004027110-A2 ADDITIVES TO PREVENT DEGRADATION OF ALKYL-HYDROGEN SILOXANES ARCH SPECIALTY CHEMICALS, INC. (US) 2004-04-01 WO disclosed
US-20040048960-A1 Compositions for preparing low dielectric materials AIR PRODUCTS AND CHEMICALS, INC. 2004-03-11 US disclosed
US-20040028916-A1 Fluorine-free plasma curing process for porous low-k materials AXCELIS TECHNOLOGIES, INC. 2004-02-12 US disclosed
US-20040013972-A1 Radiation-sensitive composition changing in refractive index and method of changing refractive index JSR CORPORATION (JP) 2004-01-22 US disclosed
EP-1376671-A1 Compositions for preparing materials with a low dielectric constant AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-01-02 EP disclosed
US-6645881-B2 Method of forming coating film, method of manufacturing semiconductor device and coating solution KABUSHIKI KAISHA TOSHIBA (JP) 2003-11-11 US disclosed
US-6642352-B2 Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound JSR CORPORATION (JP) 2003-11-04 US disclosed
EP-1350814-A1 RADIATION-SENSITIVE COMPOSITION CHANGING IN REFRACTIVE INDEX AND METHOD OF CHANGING REFRACTIVE INDEX JSR Corporation (JP) 2003-10-08 EP disclosed
US-20030157340-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030139486-A1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORPORATION (JP) 2003-07-24 US disclosed
US-20030139063-A1 Method of forming coating film, method of manufacturing semiconductor device and coating solution TOSHIBA MEMORY CORPORATION (JP) 2003-07-24 US disclosed
EP-1323742-A2 Radiation sensitive refractive index changing composition and refractive index changing method JSR Corporation (JP) 2003-07-02 EP disclosed
US-6576393-B1 Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist JSR CORPORATION (JP) 2003-06-10 US disclosed
US-20030104225-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-06-05 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
US-20030077461-A1 Stacked film, insulating film and substrate for semiconductor JSR CORPORATION (JP) 2003-04-24 US disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1298176-A2 Stacked film insulating film and substrate for semiconductor JSR Corporation (JP) 2003-04-02 EP disclosed
US-20030059550-A1 Method of film formation, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
US-20030059628-A1 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR CORPORATION (JP) 2003-03-27 US disclosed
EP-1296365-A2 Method of film formation, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
EP-1295924-A2 Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor JSR Corporation (JP) 2003-03-26 EP disclosed
US-20030050419-A1 High thermal conductivity spin castable potting compound LORD CORPORATION 2003-03-13 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
WO-2003004567-A1 HIGH THERMAL CONDUCTIVITY SPIN CASTABLE POTTING COMPOUND LORD CORPORATION (US) 2003-01-16 WO disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
US-6503633-B2 Semiconductors JSR CORPORATION (JP) 2003-01-07 US disclosed
US-20020189495-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-12-19 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
US-6495264-B2 HYDROLYSIS AND CONDENSATION OF SILANE COMPOUND IN PRESENCE OF WATER AND TETRAALKYLAMMONIUM HYDROXIDES, ALICYCLIC AMINES, AND METAL HYDROXIDES IN SOLVENT FOR FORMING DIELECTRIC LAYER FOR SEMICONDUCTORS JSR CORPORATION (JP) 2002-12-17 US disclosed
EP-1253175-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2002-10-30 EP disclosed
US-6472079-B2 PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). JSR CORPORATION (JP) 2002-10-29 US disclosed
US-6465368-B2 DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS JSR CORPORATION (JP) 2002-10-15 US disclosed
US-20020142586-A1 Method of forming dual damascene structure JSR CORPORATION (JP) 2002-10-03 US disclosed
EP-1246239-A1 Method of forming dual damascene structure JSR Corporation (JP) 2002-10-02 EP disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed
EP-0960921-B1 Oligomeric organopolysiloxan cocondensate, his preparation and use for coating surfaces DEGUSSA (DE) 2002-08-14 EP disclosed
US-20020086167-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-07-04 US disclosed
US-6413647-B1 USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH JSR CORPORATION (JP) 2002-07-02 US disclosed
US-6410151-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6410150-B1 Composition for film formation, method of film formation, and insulating film JSR CORPORATION (JP) 2002-06-25 US disclosed
US-6406794-B1 POLYETHERSILOXANE COPOLYMER JSR CORPORATION (JP) 2002-06-18 US disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20020045693-A1 Composition for film formation, method of film formation and silica-based film JSR CORPORATION (JP) 2002-04-18 US disclosed
US-20020020327-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2002-02-21 US disclosed
US-20010055892-A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2001-12-27 US disclosed
US-20010051446-A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film JSR CORPORATION (JP) 2001-12-13 US disclosed
EP-1160848-A2 Composition for silica-based film formation JSR Corporation (JP) 2001-12-05 EP disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
EP-1148105-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-24 EP disclosed
EP-1146092-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-10-17 EP disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1127929-A2 Composition for film formation, method of film formation, and silica-based film JSR Corporation (JP) 2001-08-29 EP disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
US-6251989-B1 CONTAINING WATER SOLUBLE AMINO-FUNCTIONAL ORGANOSILANE AND FLUORO-FUNCTIONAL ORGANOSILANE DEGUSSA-HUELS AKTIENGESELLSCHAFT (DE) 2001-06-26 US disclosed
US-6235101-B1 SILICON HYDROLYZATE, METAL CHELATE, ORGANIC SOLVENT AND BETA DIKETONE FOR FILMS JSR CORPORATION (JP) 2001-05-22 US disclosed
EP-1090967-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-11 EP disclosed
EP-1088868-A2 Composition for film formation, method of film formation, and insulating film JSR Corporation (JP) 2001-04-04 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0960921-A2 Oligomeric organopolysiloxan cocondensate, his preparation and use for coating surfaces Degussa-Hüls Aktiengesellschaft (DE) 1999-12-01 EP disclosed
EP-0921561-A2 Composition for film formation and film JSR Corporation (JP) 1999-06-09 EP disclosed
US-5645901-A RESIN SUBSTRATE, CURED COATING LAMINATED TO SUBSTRATE, SILOXANE CURED COATING CONTAINING FINE SILICA PARTICLES, AND INDIUM TIN OXIDE FILM SHARP KABUSHIKI KAISHA (JP) 1997-07-08 US disclosed
US-4454056-A Process for the production of zeolites modified on the surface with organosilanes DEGUSSA AKTIENGESELLSCHAFT (DE) 1984-06-12 US disclosed
US-4454056-A Process for the production of zeolites modified on the surface with organosilanes DEGUSSA AKTIENGESELLSCHAFT (DE) 1984-06-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180187010-A1 SILICON-CONTAINING RESIN COMPOSITION CROCC, SRI, SEM1 LTA4H 1103/4885CA4 2737/4885TSHR 4701/4885
US-20110313122-A1 BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION GRIK5, GJA1, SLC9A5 LTA4H 977/4885CA4 967/4885TSHR 3288/4885
US-10689514-B2 Silicon-containing resin composition CROCC, SRI, SEM1 LTA4H 1103/4885CA4 2737/4885TSHR 4701/4885
US-20200270456-A1 SILICON-CONTAINING RESIN COMPOSITION CROCC, COPE, SEM1 LTA4H 654/4885CA4 2519/4885TSHR 4750/4885
US-20190185420-A1 PRODUCTION METHOD OF CARBAMIC ACID ESTER CA2, CA7, CA4 LTA4H 3317/4885CA4 3/4885TSHR 1277/4885
US-20090317541-A1 FUNCTIONAL SILANE COMPOUND, COATING SOLUTION, AND METHOD FOR MANUFACTURING PLASTIC LENS SUMO1, CAD, UFM1 LTA4H 2835/4885CA4 2564/4885TSHR 4052/4885
US-10752579-B2 Production method of carbamic acid ester CA2, CA7, CA4 LTA4H 3317/4885CA4 3/4885TSHR 1277/4885
US-20230046062-A1 ANTIMICROBIAL COMPOSITIONS AND METHODS OF USING THEREOF PRF1, LCT, DSTN LTA4H 837/4885CA4 803/4885TSHR 4215/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.