SCHEMBL425920

SCHEMBL425920

Cc1ccc([I+]c2ccc(C(F)(F)F)cc2)cc1

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.42
CYP1A1 P04798 1/20 0.42
CYP1B1 Q16678 1/20 0.42
ALDH1A1 P00352 2/20 0.41
BCHE P06276 1/20 0.41
ACHE P22303 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA5A P35218 1/20 0.41
CA9 Q16790 1/20 0.41
KIF11 P52732 7/20 0.40
NFE2L2 Q16236 1/20 0.39
HTR3E A5X5Y0 1/20 0.38
HTR3B O95264 1/20 0.38
PLAU P00749 1/20 0.38
HTR3A P46098 1/20 0.38
HTR3D Q70Z44 1/20 0.38
HTR3C Q8WXA8 1/20 0.38
MLYCD O95822 1/20 0.37
CES2 O00748 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3824956 0.88 ALDH1A1 (0.48) TSHRALDH1A1KIF11HTR3EHTR3B
SCHEMBL17816159 0.85 TSHR (0.55) TSHRCYP1A1CYP1B1ALDH1A1BCHE
SCHEMBL91414 0.85 TSHR (0.55) TSHRCYP1A1CYP1B1ALDH1A1BCHE
Toliodium SCHEMBL2902858 0.84 ALDH1A1 (0.49) TSHRALDH1A1BCHEACHECA1
SCHEMBL548081 0.84 ALDH1A1 (0.49) TSHRALDH1A1BCHEACHECA1
Ammonia Solution, Strong SCHEMBL28559843 0.83 TSHR (0.52) TSHRCYP1A1CYP1B1ALDH1A1BCHE
Bromide SCHEMBL27849066 0.83 TSHR (0.52) TSHRCYP1A1CYP1B1ALDH1A1BCHE
SCHEMBL1134124 0.81 KIF11 (0.46) TSHRALDH1A1ACHEKIF11HTR3E
Toliodium SCHEMBL125171 0.80 ACHE (0.57) TSHRALDH1A1ACHECA1CA2
SCHEMBL4180074 0.79 TSHR (0.71) TSHRALDH1A1BCHEACHEKIF11

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230400770-A1 Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20230400766-A1 ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
US-20230161254-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-9523911-B2 Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound JSR CORPORATION (JP) 2016-12-20 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-9122154-B2 Radiation-sensitive resin composition, and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2015-09-01 US disclosed
US-20130022926-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2013-01-24 US disclosed
US-20120295198-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-11-22 US disclosed
US-RE43560-E1 Positive photosensitive compositions FUJIFILM CORPORATION (JP) 2012-07-31 US disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120070783-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-03-22 US disclosed
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2012-03-15 US disclosed
US-20110143279-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2011-06-16 US disclosed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 US disclosed
US-7897821-B2 Sulfonium compound JSR CORPORATION (JP) 2011-03-01 US disclosed
US-20110014569-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-01-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt ASIC1, FGFR1, PFAS TSHR 1269/4885CYP1A1 485/4885CYP1B1 327/4885
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND RER1, ASIC1, GAR1 TSHR 2027/4885CYP1A1 1272/4885CYP1B1 1993/4885
US-20120065291-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND RAD51, RER1, XRCC5 TSHR 3647/4885CYP1A1 2438/4885CYP1B1 3126/4885
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process NAF1, RALA, RSU1 TSHR 2101/4885CYP1A1 3968/4885CYP1B1 3048/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.