SCHEMBL437789

SCHEMBL437789

OCC(O)Cn1nnc2ccccc21

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.65
MAPT P10636 6/20 0.62
LMNA P02545 3/20 0.62
TP53 P04637 2/20 0.62
TDP1 Q9NUW8 2/20 0.62
HCRTR1 O43613 1/20 0.62
HTT P42858 1/20 0.62
RAB9A P51151 3/20 0.59
SMN1; SMN2 Q16637 2/20 0.59
NPC1 O15118 1/20 0.59
NPSR1 Q6W5P4 1/20 0.59
APAF1 O14727 1/20 0.57
POLB P06746 1/20 0.57
TDO2 P48775 2/20 0.55
SLC9A1 P19634 3/20 0.54
USP2 O75604 1/20 0.54
MDM2 Q00987 1/20 0.54
KDM4E B2RXH2 1/20 0.53
HIF1A Q16665 1/20 0.53
ALOX15 P16050 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL972935 0.84 APAF1 (0.62) ALDH1A1MAPTLMNATP53TDP1
SCHEMBL7560053 0.83 ALDH1A1 (0.60) ALDH1A1MAPTLMNATP53TDP1
SCHEMBL9772257 0.81 APAF1 (0.59) ALDH1A1MAPTLMNATP53TDP1
SCHEMBL11442537 0.81 APAF1 (0.68) ALDH1A1MAPTLMNATP53TDP1
SCHEMBL4233526 0.78 MAPT (0.55) ALDH1A1MAPTLMNATP53TDP1
SCHEMBL260406 0.78 SLC9A1 (0.66) MAPTTDP1RAB9ANPC1APAF1
SCHEMBL7716431 0.77 APAF1 (0.67) ALDH1A1MAPTLMNATP53TDP1
Fluoride SCHEMBL31379726 0.77 SLC9A1 (0.63) MAPTTDP1RAB9ANPC1POLB
Phosphine SCHEMBL28183639 0.77 SLC9A1 (0.63) MAPTTDP1RAB9ANPC1APAF1
SCHEMBL21304645 0.77 APAF1 (0.75) ALDH1A1MAPTTP53RAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 568 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114016031-B Quick etching liquid and preparation method thereof 深圳市松柏实业发展有限公司 2024-05-17 CN claimed
CN-114016031-A Fast etching liquid and preparation method thereof 深圳市松柏实业发展有限公司 2022-02-08 CN claimed
CN-107406752-B Polishing agent, stock solution for polishing agent, and polishing method 日立化成株式会社 2020-05-08 CN claimed
US-9202709-B2 Polishing liquid for metal and polishing method using the same FUJIFILM CORPORATION (JP) 2015-12-01 US claimed
CN-102318042-B Polishing agent for polishing copper and polishing method using same HITACHI CHEMICAL CO LTD 2015-07-01 CN claimed
US-8864860-B2 Polishing composition FUJIMI INCORPORATED (JP) 2014-10-21 US claimed
US-8697345-B2 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2014-04-15 US claimed
US-20100190112-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA 2010-07-29 US claimed
US-20090239380-A1 POLISHING LIQUID FOR METAL AND POLISHING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-09-24 US claimed
US-20070128872-A1 Polishing composition and polishing method SHOWA DENKO K.K. (JP) 2007-06-07 US claimed
US-20070004933-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA 2007-01-04 US claimed
EP-1687387-A1 POLISHING COMPOSITION COMPRISING PHOSPHATE ESTERS AND POLISHING METHOD Showa Denko K.K. (JP) 2006-08-09 EP claimed
US-20060063688-A1 Photoresist stripping solution and method of treating substrate with the same TOKYO OHKA KOGYO CO., LTD. (JP) 2006-03-23 US claimed
US-20060014110-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA 2006-01-19 US claimed
CN-1235093-C Corrosion inhibitor stripper composition using conductive material with high equivalent electric conductivity in aqueous bolution DUCKSUNG CO LTD (KR) 2006-01-04 CN claimed
WO-2005047409-A1 POLISHING COMPOSITION AND POLISHING METHOD SHOWA DENKO K.K. (JP) 2005-05-26 WO claimed
US-20050019688-A1 Photoresist stripping solution and a method of stripping photoresists using the same WAKIYA KAZUMASA (JP) 2005-01-27 US claimed
US-20030199407-A1 Composition of a resist stripper using electrolytic material with high equivalent conductivity in an aqueous solution DUKSUNG CO., LTD. (KR) 2003-10-23 US claimed
US-20030138737-A1 Photoresist stripping solution and a method of stripping photoresists using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2003-07-24 US claimed
EP-1281787-A2 Additives for accelerator solution for electroless metal plating Shipley Co. L.L.C. (US) 2003-02-05 EP claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070004933-A1 Photoresist stripping solution and a method of stripping photoresists using the same ALKBH2, AS3MT, KDM2B ALDH1A1 2929/4885MAPT 584/4885LMNA 2367/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.