Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.46 |
| ▸ | HSD11B1 | P28845 | 4/20 | 0.38 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.38 |
| ▸ | KCNH2 | Q12809 | 7/20 | 0.36 |
| ▸ | ACHE | P22303 | 5/20 | 0.36 |
| ▸ | CA1 | P00915 | 1/20 | 0.34 |
| ▸ | CA2 | P00918 | 1/20 | 0.34 |
| ▸ | CA5A | P35218 | 1/20 | 0.34 |
| ▸ | CA9 | Q16790 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3947658 | 0.84 | HSD11B1 (0.36) | GPR3HSD11B1PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL8735170 | 0.82 | GPR3 (0.47) | GPR3HSD11B1PTPN1KCNH2ACHE | |
| SCHEMBL2058746 | 0.82 | CA2 (0.40) | HSD11B1CA1CA2 | |
| SCHEMBL2058552 | 0.81 | MAPK1 (0.36) | ACHE | |
| Iodide SCHEMBL9005402 | 0.79 | MAPK1 (0.35) | ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL8640775 | 0.78 | HSD11B1 (0.41) | GPR3HSD11B1PTPN1CA1CA2 | |
| SCHEMBL2241309 | 0.77 | ALDH1A1 (0.35) | HSD11B1CA1CA2CA5ACA9 | |
| Trifluoromethanesulfonic Acid SCHEMBL523876 | 0.74 | GPR3 (0.50) | GPR3PTPN1KCNH2ACHECA1 | |
| Trifluoromethanesulfonic Acid SCHEMBL19915287 | 0.74 | GPR3 (0.50) | GPR3PTPN1KCNH2ACHECA1 | |
| Trifluoromethanesulfonic Acid SCHEMBL29576707 | 0.74 | GPR3 (0.50) | GPR3PTPN1KCNH2ACHECA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 229 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250377591-A1 | PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-12-11 | — | — | US | claimed |
| CN-112313580-B | Chemical amplification type positive photoresist composition for improving pattern profile | 荣昌化学制品株式会社 | 2024-11-22 | — | — | CN | claimed |
| CN-118818901-A | KrF negative photoresist and preparation method and patterning forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-10-22 | — | — | CN | claimed |
| CN-117795418-A | Chemically amplified positive resist composition for pattern profile and resolution improvement | YC化学制品株式会社 | 2024-03-29 | — | — | CN | claimed |
| US-11586109-B2 | Chemically-amplified-type negative-type photoresist composition | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2023-02-21 | — | — | US | claimed |
| EP-3435160-B1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO | YOUNG CHANG CHEMICAL CO LTD (KR) | 2022-05-04 | — | — | EP | claimed |
| US-20210216013-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR IMPROVING PATTERN PROFILE | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2021-07-15 | — | — | US | claimed |
| US-10775699-B2 | Negative photoresist composition for KRF laser, having high resolution and high aspect ratio | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2020-09-15 | — | — | US | claimed |
| US-20190137871-A1 | CHEMICALLY-AMPLIFIED-TYPE NEGATIVE-TYPE PHOTORESIST COMPOSITION | YCCHEM CO., LTD. (KR) | 2019-05-09 | — | — | US | claimed |
| US-20190101827-A1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO | YCCHEM CO., LTD. (KR) | 2019-04-04 | — | — | US | claimed |
| US-6472120-B1 | IMPROVED ETCHING RESISTANCE ADHESION, WETTABILITY; FIRST MONOMER IS NORBORNENE ESTER, AND A SECOND MONOMER IS MALEIC ANHYDRIDE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-29 | — | — | US | claimed |
| US-20020155379-A1 | Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-24 | — | — | US | claimed |
| US-20020146642-A1 | Photosensitive polymers and resist compositions comprising the photosensitive polymers | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-10 | — | — | US | claimed |
| US-20020042016-A1 | Resist composition comprising photosensitive polymer having loctone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-04-11 | — | — | US | claimed |
| US-6300036-B1 | COPOLYMER OF MALEIC ANHYDRIDE AND 2-NORBORNENE-5-METHANOL DERIVATIVE; ACCURATE PATTERNS WHEN EXPOSED TO ARGON FLUORIDE LASERS; DRY ETCHING RESISTANCE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-10-09 | — | — | US | claimed |
| US-20010024763-A1 | Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-27 | — | — | US | claimed |
| US-6287747-B1 | CONTAINING ORGANOOXYGEN COMPOUNDS AND UNSATURATED COMPOUNDS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-11 | — | — | US | claimed |
| US-6143466-A | Chemically amplified photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | claimed |
| US-6143465-A | Photosensitive polymer having cyclic backbone and resist composition comprising same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | claimed |
| EP-0921439-A1 | Photosensitive polymer and chemically amplified resist composition using the same | Samsung Electronics Co., Ltd. (KR) | 1999-06-09 | — | — | EP | claimed |