SCHEMBL2058746

SCHEMBL2058746

CC(C)(C)[I+](c1ccccc1)(c1ccccc1)C(C)(C)C.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.40

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
CA2 P00918 17/20 0.40
CA1 P00915 16/20 0.40
MMP1 P03956 4/20 0.35
MMP2 P08253 4/20 0.35
MMP9 P14780 4/20 0.35
MMP8 P22894 4/20 0.35
MMP13 P45452 4/20 0.35
HSD11B1 P28845 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3947658 0.88 HSD11B1 (0.36) CA2CA1HSD11B1
Trifluoromethanesulfonic Acid SCHEMBL443422 0.82 GPR3 (0.46) CA2CA1HSD11B1
SCHEMBL5826459 0.78 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL546546 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL4535202 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60437 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL5567499 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Perflubutane SCHEMBL6325042 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL213386 0.76 CA2 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL60137 0.76 CA2 (0.39) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109073973-B Negative photoresist composition for KrF laser with high resolution and high aspect ratio 荣昌化学制品株式会社 2021-09-28 CN claimed
EP-4194438-A1 ACETAL-BASED COMPOUND, ACETAL-BASED PREPOLYMER, ACETAL-BASED POLYMER, AND PHOTORESIST COMPOSITION COMPRISING THE SAME Samsung Electronics Co., Ltd. (KR) 2023-06-14 EP disclosed
US-7968275-B2 Method of forming a pattern using a photoresist composition for immersion lithography SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090176177-A1 METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SAMSUNG ELECTRONICS CO., LTD. 2009-07-09 US disclosed