SCHEMBL447066

SCHEMBL447066

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccc(C2CCCCC2)cc1)C(F)(F)C(F)(F)C1CC2CCC1C2

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 7/20 0.39
HTT P42858 3/20 0.39
MEN1 O00255 4/20 0.37
KMT2A Q03164 4/20 0.37
APOBEC3A P31941 1/20 0.36
APOBEC3G Q9HC16 1/20 0.36
SMN1; SMN2 Q16637 6/20 0.34
KDM4E B2RXH2 2/20 0.34
MAPK1 P28482 1/20 0.34
HSD17B10 Q99714 1/20 0.34
PTGES2 Q9H7Z7 1/20 0.34
KDM1A O60341 1/20 0.34
TSHR P16473 4/20 0.33
NPSR1 Q6W5P4 1/20 0.33
ALDH1A1 P00352 3/20 0.32
POLB P06746 1/20 0.32
THRB P10828 1/20 0.32
MAPT P10636 2/20 0.32
XBP1 P17861 1/20 0.32
TP53 P04637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL383094 0.89 L3MBTL1 (0.35) LMNAHTTMEN1KMT2AKDM4E
SCHEMBL448749 0.85 NPY2R (0.35) LMNAHTTKMT2AKDM4EHSD17B10
SCHEMBL2797827 0.83 HSD11B1 (0.39) LMNA
SCHEMBL3119965 0.82 LMNA (0.36) LMNAHTTMEN1KMT2AAPOBEC3A
SCHEMBL449882 0.81 LMNA (0.44) LMNAHTTMEN1KMT2AAPOBEC3A
SCHEMBL422297 0.79 LMNA (0.42) LMNAHTTMEN1KMT2AAPOBEC3A
SCHEMBL2799411 0.78 HSD11B1 (0.42) LMNA
SCHEMBL447487 0.78 LMNA (0.41) LMNAHTTMEN1KMT2AAPOBEC3A
SCHEMBL3129792 0.78 LMNA (0.41) LMNAHTTMEN1KMT2AAPOBEC3A
SCHEMBL447065 0.78 LMNA (0.37) LMNAHTTMEN1KMT2AAPOBEC3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 202 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12631962-B2 Resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2026-05-19 US disclosed
US-12624392-B2 Molecular array generation using photoresist 10X GENOMICS, INC. (US) 2026-05-12 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4481059-A2 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10x Genomics, Inc. (US) 2024-12-25 EP disclosed
EP-4405094-B1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-12-18 EP disclosed
EP-4271511-B1 MOLECULAR ARRAY GENERATION USING PHOTORESIST 10X GENOMICS INC (US) 2024-10-09 EP disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-20240167077-A1 COVALENT ATTACHMENT OF SPLINT OLIGONUCLEOTIDES FOR MOLECULAR ARRAY GENERATION USING LIGATION 10X GENOMICS, INC. (US) 2024-05-23 US disclosed
US-20240076656-A1 HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST 10X GENOMICS, INC. (US) 2024-03-07 US disclosed
US-20240060127-A1 METHODS AND SYSTEMS FOR LIGHT-CONTROLLED SURFACE PATTERNING USING PHOTOMASKS 10X GENOMICS, INC. 2024-02-22 US disclosed
US-20100167024-A1 NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN JSR CORPORATION (JP) 2010-07-01 US disclosed
US-20100112475-A1 RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2010-05-06 US disclosed
US-20090053649-A1 Lactone copolymer and radiation-sensitive resin composition JSR CORPORATION 2009-02-26 US disclosed
EP-1757628-A1 LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2007-02-28 EP disclosed
EP-1757980-A1 Radiation sensitive resin composition JSR Corporation (JP) 2007-02-28 EP disclosed
US-20070042292-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2007-02-22 US disclosed
US-7144675-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-12-05 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1602975-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-12-07 EP disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12631962-B2 Resist composition and method for forming resist pattern TERB1, TERF2, LSM8 LMNA 1064/4885HTT 1698/4885MEN1 712/4885
US-12624392-B2 Molecular array generation using photoresist POLL, LIG4, LIG3 LMNA 637/4885HTT 1976/4885MEN1 4778/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.