Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 2/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | HSP90AA1 | P07900 | 2/20 | 0.31 |
| ▸ | LIPE | Q05469 | 1/20 | 0.31 |
| ▸ | CNR2 | P34972 | 1/20 | 0.31 |
| ▸ | PSEN1 | P49768 | 1/20 | 0.30 |
| ▸ | PSEN2 | P49810 | 1/20 | 0.30 |
| ▸ | APH1B | Q8WW43 | 1/20 | 0.30 |
| ▸ | NCSTN | Q92542 | 1/20 | 0.30 |
| ▸ | APH1A | Q96BI3 | 1/20 | 0.30 |
| ▸ | PSENEN | Q9NZ42 | 1/20 | 0.30 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | NPC1 | O15118 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL448749 | 0.93 | NPY2R (0.35) | L3MBTL1HTTLMNAHPGDSLC6A3 | |
| SCHEMBL2797827 | 0.91 | HSD11B1 (0.39) | LMNA | |
| SCHEMBL447066 | 0.89 | LMNA (0.39) | HTTLMNAHPGDKDM4EMAPT | |
| SCHEMBL2799411 | 0.85 | HSD11B1 (0.42) | LMNA | |
| SCHEMBL3707569 | 0.84 | PSEN1 (0.34) | LMNALIPEPSEN1PSEN2APH1B | |
| SCHEMBL2536185 | 0.80 | HSD11B1 (0.31) | LIPEMAPT | |
| SCHEMBL445083 | 0.79 | SLC6A3 (0.32) | L3MBTL1HTTLMNASLC6A3CNR2 | |
| SCHEMBL3871094 | 0.79 | L3MBTL1 (0.34) | L3MBTL1SLC6A3CNR2PSEN1PSEN2 | |
| SCHEMBL2538521 | 0.78 | — | — | |
| SCHEMBL2538643 | 0.78 | ALDH1A1 (0.31) | MAPTALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 456 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2026-02-24 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| US-12386260-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | JSR CORPORATION (JP) | 2025-04-01 | — | — | US | disclosed |
| EP-4516394-A2 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2025-03-05 | — | — | EP | disclosed |
| EP-4481059-A2 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2024-12-25 | — | — | EP | disclosed |
| EP-4271511-B1 | MOLECULAR ARRAY GENERATION USING PHOTORESIST | 10X GENOMICS INC (US) | 2024-10-09 | — | — | EP | disclosed |
| WO-2024176973-A1 | METHOD FOR PRODUCING PURIFIED RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND PURIFIED RESIST COMPOSITION | 東京応化工業株式会社 | 2024-08-29 | — | — | WO | disclosed |
| EP-1600437-A1 | ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-11-30 | — | — | EP | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| US-20040146802-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-29 | — | — | US | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TERB1, TERF2, LSM8 | L3MBTL1 1488/4885HTT 1698/4885LMNA 1064/4885 |
| US-12624392-B2 | Molecular array generation using photoresist | POLL, LIG4, LIG3 | L3MBTL1 358/4885HTT 1976/4885LMNA 637/4885 |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | TOP1, RER1, ABCC1 | L3MBTL1 3636/4885HTT 3626/4885LMNA 1919/4885 |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | RAD51, RER1, RAD1 | L3MBTL1 1449/4885HTT 4175/4885LMNA 2465/4885 |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | L3MBTL1 2359/4885HTT 4125/4885LMNA 3265/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.