SCHEMBL4544299

SCHEMBL4544299

C=C(C)C(=O)OC1(CC)CCCCCCCCCCC1

nearest known ligand 0.35

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.35
THRB P10828 1/20 0.35
TSHR P16473 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4544316 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL47306 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL28137753 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL133202 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL686077 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL47303 0.98 ALDH1A1 (0.37) ALDH1A1THRBTSHR
SCHEMBL27927215 0.94 ALDH1A1 (0.37) ALDH1A1THRBTSHR
SCHEMBL673334 0.90 ALDH1A1 (0.39) ALDH1A1THRBTSHR
Acrylic Acid SCHEMBL31420446 0.89 LMNA (0.31) ALDH1A1THRBTSHR
SCHEMBL21338913 0.87 ALDH1A1 (0.37) ALDH1A1THRBTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109429511-A Positive photoresist composition, photoresist pattern using the same, and method for manufacturing photoresist pattern 株式会社LG化学 2019-03-05 CN disclosed
US-8168366-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-05-01 US disclosed
US-8168366-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-05-01 US disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed
WO-2004041770-A1 CHEMICALLY AMPLIFIED POLYMER HAVING PENDANT GROUP WITH CYCLODODECYL AND RESIST COMPOSITION COMPRISING THE SAME DONGJIN SEMICHEM CO., LTD. (KR) 2004-05-21 WO disclosed