Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 3/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4544316 | 1.00 | ALDH1A1 (0.35) | ALDH1A1THRBTSHR | |
| SCHEMBL4544299 | 1.00 | ALDH1A1 (0.35) | ALDH1A1THRBTSHR | |
| SCHEMBL28137753 | 1.00 | ALDH1A1 (0.35) | ALDH1A1THRBTSHR | |
| SCHEMBL133202 | 1.00 | ALDH1A1 (0.35) | ALDH1A1THRBTSHR | |
| SCHEMBL686077 | 1.00 | ALDH1A1 (0.35) | ALDH1A1THRBTSHR | |
| SCHEMBL47303 | 0.98 | ALDH1A1 (0.37) | ALDH1A1THRBTSHR | |
| SCHEMBL27927215 | 0.94 | ALDH1A1 (0.37) | ALDH1A1THRBTSHR | |
| SCHEMBL673334 | 0.90 | ALDH1A1 (0.39) | ALDH1A1THRBTSHR | |
| Acrylic Acid SCHEMBL31420446 | 0.89 | LMNA (0.31) | ALDH1A1THRBTSHR | |
| SCHEMBL21338913 | 0.87 | ALDH1A1 (0.37) | ALDH1A1THRBTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 470 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| US-20230348351-A1 | COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-11762292-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-09-19 | — | — | US | disclosed |
| US-20230266675-A1 | INSPECTION METHOD, METHOD FOR PRODUCING COMPOSITION, AND METHOD FOR VERIFYING COMPOSITION | FUJIFILM CORPORATION (JP) | 2023-08-24 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-11697754-B2 | Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device | FUJIFILM CORPORATION (JP) | 2023-07-11 | — | — | US | disclosed |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-7476492-B2 | Low activation energy photoresist composition and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-13 | — | — | US | disclosed |
| US-7476492-B2 | Low activation energy photoresist composition and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-13 | — | — | US | disclosed |
| US-7476492-B2 | Low activation energy photoresist composition and process for its use | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-13 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |
| US-20080233514-A1 | POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-25 | — | — | US | disclosed |
| US-20070275324-A1 | Low activation energy photoresist composition and process for its use | GLOBALFOUNDRIES U.S. INC. | 2007-11-29 | — | — | US | disclosed |
| US-20070275324-A1 | Low activation energy photoresist composition and process for its use | GLOBALFOUNDRIES U.S. INC. | 2007-11-29 | — | — | US | disclosed |
| US-20070275324-A1 | Low activation energy photoresist composition and process for its use | GLOBALFOUNDRIES U.S. INC. | 2007-11-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230348351-A1 | COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND | PHOSPHO1, RER1, RIF1 | ALDH1A1 3361/4885THRB 1590/4885TSHR 813/4885 |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, TERB1, TRRAP | ALDH1A1 2433/4885THRB 3506/4885TSHR 1473/4885 |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | RER1, FRG1, AFF1 | ALDH1A1 2326/4885THRB 2484/4885TSHR 2238/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | ALDH1A1 762/4885THRB 2913/4885TSHR 3144/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.