SCHEMBL686077

SCHEMBL686077

C=C(C)C(=O)OC1(CC)CCCCCC1

nearest known ligand 0.35

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.35
THRB P10828 1/20 0.35
TSHR P16473 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4544316 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL47306 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL4544299 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL28137753 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL133202 1.00 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL47303 0.98 ALDH1A1 (0.37) ALDH1A1THRBTSHR
SCHEMBL27927215 0.94 ALDH1A1 (0.37) ALDH1A1THRBTSHR
SCHEMBL673334 0.90 ALDH1A1 (0.39) ALDH1A1THRBTSHR
Acrylic Acid SCHEMBL31420446 0.89 LMNA (0.31) ALDH1A1THRBTSHR
SCHEMBL21338913 0.87 ALDH1A1 (0.37) ALDH1A1THRBTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 147 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106980235-A Chemically amplified photoresist composition and process for its use and its application method 国际商业机器公司 2017-07-25 CN claimed
CN-102472971-B chemically amplified photoresist composition and method of use thereof 国际商业机器公司 2016-12-07 CN claimed
CN-119882351-A High-adhesion positive KrF photoresist resin composition 万华化学集团股份有限公司 2025-04-25 CN disclosed
WO-2024005049-A1 COMPOSITION, RESIN COMPOSITION, FILM FORMATION COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND 三菱瓦斯化学株式会社 2024-01-04 WO disclosed
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-11-02 US disclosed
US-20230174688-A1 COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUND, AND METHOD FOR PRODUCING (CO)POLYMER MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-06-08 US disclosed
US-11640114-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-02 US disclosed
CN-115725015-A KrF resin, process for producing the same, and chemically amplified photoresist 阜阳欣奕华材料科技有限公司 2023-03-03 CN disclosed
US-20220119336-A1 COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-04-21 US disclosed
US-20200326625-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION AND PROCESS FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-10-15 US disclosed
US-10747111-B2 Compound, resin, photoresist composition and process for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-08-18 US disclosed
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-29 US disclosed
US-20110201823-A1 SALT AND PROCESS FOR PRODUCING ACID GENERATOR SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
WO-2011062168-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD JSR株式会社 (JP) 2011-05-26 WO disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200326625-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION AND PROCESS FOR PRODUCING PHOTORESIST PATTERN HAX1, BRIX1, RXRA ALDH1A1 2800/4885THRB 3343/4885TSHR 1050/4885
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND PHOSPHO1, RER1, RIF1 ALDH1A1 3361/4885THRB 1590/4885TSHR 813/4885
US-20230174688-A1 COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUND, AND METHOD FOR PRODUCING (CO)POLYMER MCCC2, MMAB, INTS9 ALDH1A1 1392/4885THRB 551/4885TSHR 502/4885
US-20220119336-A1 COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING COMPOUND PYM1, MMAB, MEN1 ALDH1A1 1455/4885THRB 941/4885TSHR 672/4885
US-10747111-B2 Compound, resin, photoresist composition and process for producing photoresist pattern HAX1, BRIX1, RXRA ALDH1A1 2800/4885THRB 3343/4885TSHR 1050/4885
US-11640114-B2 Compound, resin, photoresist composition and process for producing photoresist pattern HAX1, BRIX1, RXRA ALDH1A1 2800/4885THRB 3343/4885TSHR 1050/4885
US-20110201823-A1 SALT AND PROCESS FOR PRODUCING ACID GENERATOR FGFR1, MTX1, RER1 ALDH1A1 2214/4885THRB 3600/4885TSHR 1890/4885
US-20110318690-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION RCOR1, C1R, C1S ALDH1A1 1376/4885THRB 3769/4885TSHR 3451/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.