Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4947212 | 1.00 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL4630501 | 1.00 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL182496 | 0.92 | TSHR (0.43) | ALDH1A1TSHRTDP1 | |
| SCHEMBL525601 | 0.81 | ALDH1A1 (0.38) | ALDH1A1TSHRTDP1 | |
| SCHEMBL16681999 | 0.78 | ALDH1A1 (0.36) | ALDH1A1TSHRTDP1 | |
| SCHEMBL28590363 | 0.78 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL28582112 | 0.78 | ALDH1A1 (0.35) | ALDH1A1 | |
| SCHEMBL1975221 | 0.76 | TSHR (0.43) | ALDH1A1TSHRTDP1 | |
| SCHEMBL1482718 | 0.75 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL4631722 | 0.75 | ALDH1A1 (0.33) | ALDH1A1TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4744089-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | Versum Materials US, LLC (US) | 2026-05-20 | — | — | EP | claimed |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| WO-2025038887-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-02-20 | — | — | WO | claimed |
| EP-1669361-B1 | Precursors for silica or metal silicate films | AIR PROD & CHEM (US) | 2008-05-21 | — | — | EP | claimed |
| US-7064227-B1 | Precursors for silica or metal silicate films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-06-20 | — | — | US | claimed |
| US-20060127578-A1 | PRECURSORS FOR SILICA OR METAL SILICATE FILMS | VERSUM MATERIALS US, LLC | 2006-06-15 | — | — | US | claimed |
| EP-1669361-A1 | Precursors for silica or metal silicate films | Air Products and Chemicals, Inc. (US) | 2006-06-14 | — | — | EP | claimed |
| US-20260139367-A1 | CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS | ASM IP HOLDING B V (NL) | 2026-05-21 | — | — | US | disclosed |
| EP-4744089-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | Versum Materials US, LLC (US) | 2026-05-20 | — | — | EP | disclosed |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-12590364-B2 | Cyclical deposition methods | ASM IP HOLDING B.V. (NL) | 2026-03-31 | — | — | US | disclosed |
| EP-4690280-A1 | AREA SELECTIVE DEPOSITION OF DIELECTRIC FILM ON SILICON CONTAINING SURFACES UTILIZING ALCOHOLS | Versum Materials US, LLC (US) | 2026-02-11 | — | — | EP | disclosed |
| WO-2025038887-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | VERSUM MATERIALS US, LLC (US) | 2025-02-20 | — | — | WO | disclosed |
| JP-2006160744-A | PRECURSOR FOR SILICA OR METAL SILICATE FILM | AIR PRODUCTS & CHEMICALS INC | 2006-06-22 | — | — | JP | disclosed |
| US-7064227-B1 | Precursors for silica or metal silicate films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-06-20 | — | — | US | disclosed |
| US-7064227-B1 | Precursors for silica or metal silicate films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-06-20 | — | — | US | disclosed |
| US-20060127578-A1 | PRECURSORS FOR SILICA OR METAL SILICATE FILMS | VERSUM MATERIALS US, LLC | 2006-06-15 | — | — | US | disclosed |
| US-20060127578-A1 | PRECURSORS FOR SILICA OR METAL SILICATE FILMS | VERSUM MATERIALS US, LLC | 2006-06-15 | — | — | US | disclosed |
| EP-1669361-A1 | Precursors for silica or metal silicate films | Air Products and Chemicals, Inc. (US) | 2006-06-14 | — | — | EP | disclosed |
| EP-1669361-A1 | Precursors for silica or metal silicate films | Air Products and Chemicals, Inc. (US) | 2006-06-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260139367-A1 | CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS | SOS2, CDH1, ZYX | ALDH1A1 3850/4885TSHR 3903/4885TDP1 4775/4885 |
| US-12590364-B2 | Cyclical deposition methods | SOS2, NR1H2, SCO2 | ALDH1A1 3808/4885TSHR 561/4885TDP1 4465/4885 |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | PDK1, HPD, HAO2 | ALDH1A1 41/4885TSHR 4501/4885TDP1 545/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.