Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.43 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4630501 | 0.92 | ALDH1A1 (0.38) | TSHRTDP1ALDH1A1 | |
| SCHEMBL4947212 | 0.92 | ALDH1A1 (0.38) | TSHRTDP1ALDH1A1 | |
| SCHEMBL4630474 | 0.92 | ALDH1A1 (0.38) | TSHRTDP1ALDH1A1 | |
| SCHEMBL16681999 | 0.85 | ALDH1A1 (0.36) | TSHRTDP1ALDH1A1 | |
| SCHEMBL1975221 | 0.82 | TSHR (0.43) | TSHRTDP1ALDH1A1 | |
| SCHEMBL4631286 | 0.81 | ALDH1A1 (0.33) | TSHRTDP1ALDH1A1 | |
| SCHEMBL4631722 | 0.81 | ALDH1A1 (0.33) | TSHRTDP1ALDH1A1 | |
| SCHEMBL2284224 | 0.81 | ALDH1A1 (0.30) | TSHRTDP1ALDH1A1 | |
| SCHEMBL825172 | 0.80 | TSHR (0.41) | TSHRTDP1ALDH1A1 | |
| SCHEMBL4947163 | 0.79 | ALDH1A1 (0.32) | TSHRTDP1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 712 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4744089-A1 | SELECTIVE DEPOSITION OF ALUMINUM-CONTAINING DIELECTRIC MATERIAL ON DIELECTRIC OVER METAL UTILIZING ALKYNES | Versum Materials US, LLC (US) | 2026-05-20 | — | — | EP | claimed |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| US-20260103796-A1 | MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS | ENTEGRIS INC (US) | 2026-04-16 | — | — | US | claimed |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | ASM IP HOLDING B.V. (NL) | 2026-04-14 | — | — | US | claimed |
| EP-4719364-A1 | PREPARATION OF PHARMACEUTICAL COMPOSITIONS USING SUPERCYCLE VAPOR PHASE DEPOSITION OF INORGANIC OXIDES | Applied Materials, Inc. (US) | 2026-04-08 | — | — | EP | claimed |
| US-12571093-B2 | Selective deposition of silicon oxide on metal surfaces | ASM IP HOLDING B.V. (NL) | 2026-03-10 | — | — | US | claimed |
| US-20260018458-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | EMD PERFORMANCE MATERIALS CORP. (US) | 2026-01-15 | — | — | US | claimed |
| US-20250376758-A1 | SELECTIVE DEPOSITION OF METAL-CONTAINING MATERIAL | ASM IP HOLDING BV (NL) | 2025-12-11 | — | — | US | claimed |
| US-12491165-B2 | Low temperature silicon oxide coating for pharmaceutical applications | APPLIED MATERIALS, INC. (US) | 2025-12-09 | — | — | US | claimed |
| US-12431354-B2 | Silicon nitride and silicon oxide deposition methods using fluorine inhibitor | ASM IP HOLDING B.V. (NL) | 2025-09-30 | — | — | US | claimed |
| US-20070077717-A1 | Method for forming transistor of semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2007-04-05 | — | — | US | claimed |
| US-7157385-B2 | Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry | MICRON TECHNOLOGY, INC. (US) | 2007-01-02 | — | — | US | claimed |
| US-7135418-B1 | Optimal operation of conformal silica deposition reactors | NOVELLUS SYSTEMS, INC. (US) | 2006-11-14 | — | — | US | claimed |
| US-20060216548-A1 | Nanolaminate thin films and method for forming the same using atomic layer deposition | UDC IRELAND LIMITED (IE) | 2006-09-28 | — | — | US | claimed |
| US-7109129-B1 | Optimal operation of conformal silica deposition reactors | NOVELLUS SYSTEMS, INC. (US) | 2006-09-19 | — | — | US | claimed |
| US-20060189159-A1 | Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry | DERDERIAN GARO J | 2006-08-24 | — | — | US | claimed |
| US-20060183347-A1 | Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry | DERDERIAN GARO J | 2006-08-17 | — | — | US | claimed |
| US-20060046518-A1 | Method of increasing deposition rate of silicon dioxide on a catalyst | MICRON TECHNOLOGY, INC. (US) | 2006-03-02 | — | — | US | claimed |
| US-20060008972-A1 | Method of forming trench isolation in the fabrication of integrated circuitry | DERDERIAN GARO J | 2006-01-12 | — | — | US | claimed |
| US-20050054213-A1 | Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry | OMNIMAX INTERNATIONAL, LLC | 2005-03-10 | — | — | US | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260018458-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | PARG, PIEZO1, CACNG1 | TSHR 4335/4885TDP1 2121/4885ALDH1A1 3558/4885 |
| US-12571093-B2 | Selective deposition of silicon oxide on metal surfaces | EPCAM, L1CAM, ITGAM | TSHR 3108/4885TDP1 4499/4885ALDH1A1 1009/4885 |
| US-20260103796-A1 | MULTILAYER COATINGS FOR REDUCED SURFACE METALS ON OXIDE FILMS | CBL, CBLB, AGO2 | TSHR 3360/4885TDP1 4132/4885ALDH1A1 1250/4885 |
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | MRE11, SPOP, OGG1 | TSHR 4541/4885TDP1 2463/4885ALDH1A1 4568/4885 |
| US-20260123372-A1 | MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS | PDK1, HPD, HAO2 | TSHR 4501/4885TDP1 545/4885ALDH1A1 41/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.