SCHEMBL47563

SCHEMBL47563

c1ccc(-[s+]2c3ccccc3c3ccccc32)cc1

nearest known ligand 0.30

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30
CYP2A6 P11509 1/20 0.30
TSHR P16473 1/20 0.30
HSD17B10 Q99714 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9149028 0.91 ACHE (0.34)
SCHEMBL3142984 0.87 ALDH1A1 (0.39) ALDH1A1HSD17B10TDP1
SCHEMBL9149034 0.87
SCHEMBL13326153 0.82 ALDH1A1 (0.39) ALDH1A1HSD17B10TDP1
SCHEMBL8737948 0.82 LMNA (0.37) ALDH1A1CYP2A6HSD17B10TDP1
SCHEMBL29968036 0.80 ACHE (0.38) ALDH1A1CYP2A6TSHRTDP1
SCHEMBL107598 0.80 CA12 (0.38) ALDH1A1HSD17B10TDP1
SCHEMBL1059475 0.80 GLA (0.34) ALDH1A1HSD17B10
SCHEMBL29967560 0.80 MAOA (0.39) ALDH1A1HSD17B10
SCHEMBL30118169 0.80 GLA (0.34) ALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1288 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9221928-B2 Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method CENTRAL GLASS COMPANY, LIMITED (JP) 2015-12-29 US claimed
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
US-20250383600-A1 BENZENESULFONIC ACID SALT COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-18 US disclosed
EP-4664196-A2 BENZENESULFONIC ACID SALT COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12240804-B2 Onium salt, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-03-04 US disclosed
US-20250004378-A1 Pattern Forming Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-02 US disclosed
EP-4474911-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-11 EP disclosed
EP-4474912-A2 PATTERN FORMING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2024-12-11 EP disclosed
CN-119087742-A Pattern forming method 信越化学工业株式会社 2024-12-06 CN disclosed
CN-119087741-A Composition for forming resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-06 CN disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 US disclosed
US-20070052790-A1 Ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070049651-A1 Curable composition, ink composition, inkjet recording method, printed material, method of producing planographic printing plate, planographic printing plate, and oxcetane compound FUJI PHOTO FILM CO., LTD. 2007-03-01 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070020479-A1 Luminescent-polymer composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-01-25 US disclosed
US-7163781-B2 Process for producing a semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-16 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed
US-7157205-B2 Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12240804-B2 Onium salt, chemically amplified resist composition and patterning process CACNA1F, SLC6A5, IDUA ALDH1A1 3860/4885CYP2A6 4284/4885TSHR 4292/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.