SCHEMBL4926645

SCHEMBL4926645

Cc1ccccc1S(=O)(=O)C(=[N+]=[N-])S(C)(=O)=O

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAPGEF4 Q8WZA2 1/20 0.40
HSD11B1 P28845 1/20 0.35
KMT2A Q03164 3/20 0.34
GAA P10253 2/20 0.34
MEN1 O00255 2/20 0.34
ESR1 P03372 2/20 0.34
ESR2 Q92731 2/20 0.34
HTR2A P28223 1/20 0.34
HTR2C P28335 1/20 0.34
SLC1A3 P43003 1/20 0.34
SLC1A2 P43004 1/20 0.34
SLC1A1 P43005 1/20 0.34
KDM4E B2RXH2 3/20 0.33
TDP1 Q9NUW8 2/20 0.33
KAT6A Q92794 1/20 0.33
POLB P06746 1/20 0.33
LMNA P02545 1/20 0.33
HTT P42858 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
ATM Q13315 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4541609 0.91 RAPGEF4 (0.42) RAPGEF4HSD11B1KMT2AGAAMEN1
SCHEMBL27503502 0.84 EPHX2 (0.39) RAPGEF4HTR2AHTR2CPOLBLMNA
SCHEMBL15101771 0.81 RAPGEF4 (0.43) RAPGEF4HSD11B1KMT2AGAAMEN1
SCHEMBL25431421 0.79 RAPGEF4 (0.38) RAPGEF4HSD11B1KMT2AGAAMEN1
SCHEMBL64020 0.77 KMT2A (0.39) RAPGEF4HSD11B1KMT2AGAAMEN1
SCHEMBL3193127 0.77 SMN1; SMN2 (0.40) HSD11B1KMT2AKDM4ETDP1LMNA
SCHEMBL29130823 0.77 BCAT2 (0.38) HSD11B1LMNA
SCHEMBL7962765 0.72 ALDH1A1 (0.37) RAPGEF4HSD11B1KMT2AGAAMEN1
SCHEMBL60930 0.71 GAA (0.43) RAPGEF4KMT2AGAAMEN1POLB
SCHEMBL15437896 0.71 SLC1A3 (0.44) RAPGEF4HSD11B1KMT2AGAAMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103930448-B Photocurable composition and the patterning method using the Photocurable composition 佳能株式会社 2017-11-17 CN disclosed
CN-106795287-A Silicone polymers combination 科恩托罗尼丝株式会社 2017-05-31 CN disclosed
CN-103907174-B The forming method of film 佳能株式会社 2016-09-07 CN disclosed
CN-104350084-A Polymer having terminal structure including plurality of reactive silicon groups, method for manufacturing same, and use for same KANEKA CORP 2015-02-11 CN disclosed
CN-103930448-A Photo-curable composition and patterning method using the same CANON KK 2014-07-16 CN disclosed
CN-103907174-A Method of forming film CANON KK 2014-07-02 CN disclosed
CN-102597048-B Bilayer system comprising a polydimethylglutarimide-based underlayer and composition thereof IBM 2014-03-26 CN disclosed
CN-101946209-B Silicon-containing resist underlayer film-forming composition containing cyclic amino group NISSAN CHEMICAL IND LTD 2014-01-22 CN disclosed
CN-101910949-B Composition for forming resist underlayer film containing silicon and having urea group NISSAN CHEMICAL IND LTD 2013-07-24 CN disclosed
CN-101910318-B Siloxane resin compositions TORAY INDUSTRIES 2012-10-24 CN disclosed
CN-101946209-A Silicon-containing resist underlayer film-forming composition containing cyclic amino group NISSAN CHEMICAL IND LTD 2011-01-12 CN disclosed
CN-101910318-A Siloxane resin compositions TORAY INDUSTRIES 2010-12-08 CN disclosed
CN-101910949-A Composition for forming resist underlayer film containing silicon and having urea group NISSAN CHEMICAL IND LTD 2010-12-08 CN disclosed
CN-100390232-C Composition for forming organic insulating film and organic insulating film formed from the same SAMSUNG ELECTRONICS CO LTD (KR) 2008-05-28 CN disclosed
US-20080118870-A1 Sulfur Atom-Containing Anti-Reflective Coating Forming Composition For Lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-05-22 US disclosed
CN-101154041-A Radiation sensitive resin composition, and formation of interlayer insulating film and microlens JSR CORP (JP) 2008-04-02 CN disclosed
CN-1908816-A Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material JSR CORP (JP) 2007-02-07 CN disclosed
CN-1242303-C Agent for lowering dependence of substrate WAKO PURE CHEM IND LTD (JP) 2006-02-15 CN disclosed
CN-1637066-A Composition for forming organic insulating film and organic insulating film formed from the same SAMSUNG ELECTRONICS CO LTD (KR) 2005-07-13 CN disclosed
CN-1278076-A Agent for lowering dependence of substrate WAKO PURE CHEM IND LTD (JP) 2000-12-27 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080118870-A1 Sulfur Atom-Containing Anti-Reflective Coating Forming Composition For Lithography TPMT, TST, TMT1A RAPGEF4 3331/4885HSD11B1 2902/4885KMT2A 494/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.