SCHEMBL64020

SCHEMBL64020

Cc1cccc(S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)c2cccc(C)c2C)c1C

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.39
KEAP1 Q14145 1/20 0.37
NFE2L2 Q16236 1/20 0.37
TRPA1 O75762 1/20 0.36
ATM Q13315 1/20 0.36
FABP4 P15090 2/20 0.32
GAA P10253 2/20 0.32
MEN1 O00255 1/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
HSD11B1 P28845 1/20 0.32
ALDH1A1 P00352 3/20 0.32
NPSR1 Q6W5P4 1/20 0.32
TSHR P16473 2/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CASP1 P29466 1/20 0.32
MAPK1 P28482 1/20 0.31
RAPGEF4 Q8WZA2 1/20 0.31
KDM4E B2RXH2 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3896326 0.89 GAA (0.38) KMT2AGAAMEN1HSD11B1ALDH1A1
SCHEMBL4541609 0.85 RAPGEF4 (0.42) KMT2AATMGAAMEN1ESR1
SCHEMBL5993332 0.84 KMT2A (0.38) KMT2AKEAP1NFE2L2TRPA1ATM
SCHEMBL3170786 0.78 ALDH1A1 (0.35) KMT2AATMGAAMEN1ALDH1A1
SCHEMBL31399011 0.78 ALDH1A1 (0.35) KMT2AATMGAAMEN1ALDH1A1
SCHEMBL4926645 0.77 RAPGEF4 (0.40) KMT2AATMGAAMEN1ESR1
SCHEMBL15101771 0.76 RAPGEF4 (0.43) KMT2AATMGAAMEN1HSD11B1
SCHEMBL3166189 0.74 RAPGEF4 (0.39) KMT2AATMGAAMEN1ALDH1A1
SCHEMBL30458256 0.74 RAPGEF4 (0.39) KMT2AATMGAAMEN1ALDH1A1
SCHEMBL29130823 0.74 BCAT2 (0.38) HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 873 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
EP-4617775-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-17 EP disclosed
EP-4600743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN MEMBRANE, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
EP-4600741-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed
US-6066433-A SILICONE POLYMER CONTAINING PHENOLIC HYDROXYL GROUPS HAVING HYDROGEN ATOMS OF SOME PHENOLIC HYDROXYL GROUPS REPLACED BY ACID LABILE GROUPS, CROSSLINKED AT SOME OF THE REMAINING PHENOLIC HYDROXYL GROUPS WITH GROUPS HAVING ETHER LINKAGES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-23 US disclosed
US-6048661-A POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-04-11 US disclosed
US-6033828-A POLYVINYLPHENOL DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-03-07 US disclosed
US-6027854-A ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. 2000-02-22 US disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 KMT2A 536/4885KEAP1 4285/4885NFE2L2 3484/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 KMT2A 2425/4885KEAP1 3563/4885NFE2L2 2173/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 KMT2A 537/4885KEAP1 3617/4885NFE2L2 2782/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.