SCHEMBL501596

SCHEMBL501596

CC(C)(C)C(=O)OCC(F)(F)S(=O)(=O)O.[NaH]

nearest known ligand 0.34

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
PRKCA P17252 1/20 0.34
ALDH1A1 P00352 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
POLB P06746 1/20 0.30
GAA P10253 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
ELANE P08246 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2217884 0.98 PRKCA (0.35) PRKCAALDH1A1L3MBTL1POLBGAA
SCHEMBL1262421 0.88 CHRM2 (0.31) PRKCA
SCHEMBL15071771 0.86 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL16168110 0.86 PRKCA (0.31) PRKCA
Tetrabuthylammonium SCHEMBL3417174 0.83 SLC22A1 (0.34)
SCHEMBL8927975 0.82 ALDH1A1 (0.34) ALDH1A1L3MBTL1
SCHEMBL683677 0.81 CYP4F2 (0.32)
SCHEMBL19857283 0.81 PRKCA (0.34) PRKCAPOLBGAANPSR1ELANE
SCHEMBL19042383 0.81 PRKCA (0.34) PRKCAPOLBGAANPSR1ELANE
SCHEMBL21505268 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2256551-B1 Pattern forming process using a chemically amplified resist composition SHINETSU CHEMICAL CO (JP) 2015-05-13 EP disclosed
EP-2081084-B1 Positive resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2014-12-24 EP disclosed
US-8748672-B2 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt and method for producing the same CENTRAL GLASS COMPANY, LIMITED (JP) 2014-06-10 US disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-20130317250-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same CENTRAL GLASS COMPANY, LIMITED (JP) 2013-11-28 US disclosed
US-8581009-B2 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt and method for producing the same CENTRAL GLASS COMPANY, LIMITED (JP) 2013-11-12 US disclosed
US-8349533-B2 Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-08 US disclosed
US-8288076-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8222448-B2 Processes for production of 2-bromo-2,2-difluoroethanol and 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt CENTRAL GLASS COMPANY, LIMITED (JP) 2012-07-17 US disclosed
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-01 US disclosed
EP-2105794-A1 Novel photoacid generator, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-09-30 EP disclosed
EP-2090931-A1 Positive resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-08-19 EP disclosed
US-20090202943-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090186297-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186298-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186296-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-07-23 US disclosed
EP-2081083-A1 Positive resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-22 EP disclosed
EP-2081084-A1 Positive resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-22 EP disclosed
EP-2081085-A1 Positive resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-22 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090246694-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS ASIC1, HAO2, HRH3 PRKCA 2200/4885ALDH1A1 486/4885L3MBTL1 4184/4885
US-20130317250-A1 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same PFAS, DDAH1, STS PRKCA 1921/4885ALDH1A1 421/4885L3MBTL1 3984/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.