Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | NPC1 | O15118 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | PKM | P14618 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | RECQL | P46063 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | GPX4 | P36969 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL501880 | 0.90 | GPX4 (0.32) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL22200986 | 0.89 | HTT (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL19719133 | 0.89 | HTT (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL92274 | 0.89 | HTT (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL17552586 | 0.89 | KDM4E (0.31) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL23077918 | 0.89 | HTT (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL18270550 | 0.88 | KDM4E (0.34) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL14330317 | 0.86 | KDM4E (0.30) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL1216158 | 0.86 | KDM4E (0.32) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL17550002 | 0.85 | NPC1 (0.30) | KDM4ENPC1POLBMAPTPKM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9829792-B2 | Monomer, polymer, positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170008982-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-12 | — | — | US | disclosed |
| US-20170008982-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-12 | — | — | US | disclosed |
| US-9458144-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20150322027-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-9182668-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9182668-B2 | Patterning process, resist composition, polymer, and monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9040221-B2 | Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound | JSR CORPORATION (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9040221-B2 | Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound | JSR CORPORATION (JP) | 2015-05-26 | — | — | US | disclosed |
| EP-2533101-B1 | Sulfonium salt, polymer, chemically amplified resist composition containing said polymer, and resist patterning process | SHINETSU CHEMICAL CO (JP) | 2014-11-19 | — | — | EP | disclosed |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| EP-2533101-A2 | Sulfonium salt, polymer, chemically amplified resist composition using said polymer, and resist patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-12-12 | — | — | EP | disclosed |
| US-20120308920-A1 | SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308920-A1 | SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308920-A1 | SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | KDM4E 3411/4885NPC1 4449/4885POLB 1985/4885 |
| US-20170008982-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, PARN, MMS19 | KDM4E 781/4885NPC1 4814/4885POLB 128/4885 |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, DOT1L, H1-0 | KDM4E 123/4885NPC1 2967/4885POLB 749/4885 |
| US-20130122426-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER AND COMPOUND | RER1, RFTN1, FRG1 | KDM4E 3374/4885NPC1 2481/4885POLB 202/4885 |
| US-20150322027-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ELL, RPS17, EEF1A1 | KDM4E 127/4885NPC1 4611/4885POLB 454/4885 |
| US-20120308920-A1 | SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS | SMCHD1, CD44, SMC1A | KDM4E 3254/4885NPC1 4830/4885POLB 183/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.