Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | RECQL | P46063 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | HSD11B1 | P28845 | 6/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.37 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.37 |
| ▸ | HSD17B3 | P37058 | 1/20 | 0.36 |
| ▸ | POLB | P06746 | 2/20 | 0.36 |
| ▸ | NR1I2 | O75469 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.35 |
| ▸ | EEF2K | O00418 | 1/20 | 0.35 |
| ▸ | RORA | P35398 | 1/20 | 0.35 |
| ▸ | ABCC9 | O60706 | 1/20 | 0.34 |
| ▸ | ABCC8 | Q09428 | 1/20 | 0.34 |
| ▸ | KCNJ11 | Q14654 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL501907 | 0.93 | HSD11B1 (0.40) | ALDH1A1NPC1HSD11B1MAPK1MAPT | |
| SCHEMBL16893272 | 0.83 | HSD11B1 (0.47) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL1398386 | 0.80 | ALDH1A1 (0.43) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL387181 | 0.79 | HSD11B1 (0.50) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL3136709 | 0.79 | HSD11B1 (0.50) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL961627 | 0.78 | POLB (0.46) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL4261409 | 0.78 | HSD11B1 (0.42) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL962244 | 0.77 | HSD11B1 (0.40) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL14674097 | 0.76 | ALDH1A1 (0.37) | ALDH1A1NPC1RECQLRAB9AHSD11B1 | |
| SCHEMBL501700 | 0.76 | ALDH1A1 (0.36) | ALDH1A1NPC1RECQLRAB9AHSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2081084-B1 | Positive resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-12-24 | — | — | EP | disclosed |
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | disclosed |
| US-8349533-B2 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8114571-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| EP-2081083-B1 | Positive resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-09-21 | — | — | EP | disclosed |
| US-8021822-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-8017302-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-13 | — | — | US | disclosed |
| US-20100119970-A1 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-13 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| EP-2105794-A1 | Novel photoacid generator, resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-09-30 | — | — | EP | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| EP-2081083-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081085-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081084-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | ALDH1A1 3135/4885NPC1 4449/4885RECQL 1093/4885 |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | CYP21A2, C1S, C1R | ALDH1A1 1216/4885NPC1 2213/4885RECQL 1721/4885 |
| US-20100119970-A1 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SCO2, CA1, LCT | ALDH1A1 757/4885NPC1 3861/4885RECQL 651/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.